PANASONIC MA3J142D

Switching Diodes
MA3J142D
Silicon epitaxial planar type
Unit : mm
For switching circuits
2.1 ± 0.1
1.25 ± 0.1
0.425
2.0 ± 0.2
1.3 ± 0.1
0.65 0.65
■ Features
• Small S-mini type package contained two elements, allowing
high-density mounting
0.3 − 0
+ 0.1
0.425
1
3
2
Rating
Unit
Reverse voltage (DC)
VR
80
V
Peak reverse voltage
VRM
80
V
IF
100
mA
Single
Forward current
(DC)
Double
Peak forward
current
Double
Non-repetitive peak
forward surge current*
Double
+ 0.1
Symbol
0.9 ± 0.1
Parameter
0.15 − 0.05
■ Absolute Maximum Ratings Ta = 25°C
1 : Cathode 1
2 : Cathode 2
3 : Anode 1
Anode 2
Flat S-Mini Type Package (3-pin)
150
Single
IFM
225
mA
340
Single
IFSM
500
mA
Marking Symbol: MO
Internal Connection
750
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1
Note) * : t = 1 s
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 75 V
100
nA
Forward voltage (DC)
VF
IF = 100 mA
1.2
V
Reverse voltage (DC)
VR
IR = 100 µA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
15
pF
Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
10
ns
80
V
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA3J142D
Switching Diodes
IF  V F
− 20°C
10
1
10−1
Forward voltage VF (V)
Ta = 150°C
103
Reverse current IR (nA)
Ta = 150°C
1.6
1.4
100°C 25°C
102
Forward current IF (mA)
VF  Ta
IR  V R
104
103
100°C
102
10
25°C
1.2
1.0
IF = 100 mA
0.8
10 mA
0.6
3 mA
0.4
1
0.2
10−2
10−1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
60
80
IR  Ta
4.0
10
1
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
3.0
2.5
2.0
1.6
1.0
0
0
20
40
60
80
80
120
160
200
IF(surge)  tW
0.5
−40
40
1 000
Forward surge current IF(surge) (A)
35 V
6V
102
10−1
0
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
3.5
Terminal capacitance Ct (pF)
VR = 75 V
0
−40
120
Ct  VR
104
103
100
Reverse voltage VR (V)
Forward voltage VF (V)
Reverse current IR (nA)
40
100
Reverse voltage VR (V)
120
Ta = 25°C
IF(surge)
300
tW
Non repetitive
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
Pulse width tW (ms)
10
30