Switching Diodes MA2J111 Silicon epitaxial planar type Unit : mm For switching circuits A 0.3 0.5 ± 0.1 • Small S-mini type package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V) 0.625 ■ Features 1 0.7±0.1 + 0.1 0.16 − 0.06 2 1.25 ± 0.1 K ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Symbol Rating Unit VR 80 V Peak reverse voltage VRM 80 V Average forward current IF(AV) 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.4 ± 0.1 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 1B Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions IR VR = 75 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω Reverse current (DC) Reverse recovery time* Min Typ 0.95 Max Unit 100 nA 1.2 V 80 V 0.6 1.2 pF 3 ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA2J111 Switching Diodes IF V F IR V R 100 1 000 VF Ta 1.6 Ta = 150°C 1.4 10 Ta = 150°C 1 100°C 25°C − 20°C 0.1 10 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) 100 100°C 1 0.1 25°C 0.01 0 0.2 0.4 0.6 0.8 1.0 0.01 1.2 0 Forward voltage VF (V) 20 60 80 100 IR Ta 1 0.1 40 120 160 200 0.5 0.4 0.3 0.2 0 20 40 60 80 80 120 160 200 IF(surge) tW 0.6 0 Ambient temperature Ta (°C) 2 0 Ambient temperature Ta (°C) 0.1 80 3 mA 0.4 0 −40 120 1 000 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 10 40 10 mA 0.6 0.2 f = 1 MHz Ta = 25°C 0.7 35 V 1V 0 IF = 100 mA 0.8 Ct VR 0.8 VR = 75 V 0.01 −40 1.0 Reverse voltage VR (V) 100 Reverse current IR (µA) 40 1.2 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30