TSM60N380 A14

TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
ITO-220
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
Unit
VDS
600
V
RDS(on) (max)
0.38
Ω
Qg
20.5
nC
TO-252
(DPAK)
Block Diagram
Features
●
●
Super-Junction technology
High performance due to small figure-of-merit
●
●
High ruggedness performance
High commutation performance
Application
●
●
Power Supply.
Lighting
Ordering Information
Package
Packing
TSM60N380CI C0G
Part No.
ITO-220
50pcs / Tube
TSM60N380CH C5G
TO-251
75pcs / Tube
N-Channel MOSFET
TSM60N380CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
o
TC = 25 C
(Note 2)
o
Total Power Dissipation @ TC=25 C
Symbol
Limit
ITO-220
IPAK/DPAK
Unit
VDS
600
V
VGS
±30
V
ID
11
A
IDM
33
A
PDTOT
33
125
Single Pulsed Avalanche Energy
(Note 3)
EAS
169
Single Pulsed Avalanche Current
(Note 3)
IAS
2.6
Operating Junction and Storage Temperature Range
TJ, TSTG
1/9
- 55 to +150
W
mJ
A
o
C
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
RӨJC
Junction to Ambient Thermal Resistance
Limit
ITO-220
IPAK/DPAK
3.8
1
RӨJA
Unit
o
C/W
o
62
C/W
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
--
--
V
4
V
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
600
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 5.5A
RDS(ON)
--
0.31
0.38
Ω
Qg
--
20.5
--
Qgs
--
4.8
--
Qgd
--
6.5
--
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 380V, ID = 11A,
VGS = 10V
nC
Input Capacitance
VDS = 100V, VGS = 0V,
Ciss
--
1040
--
Output Capacitance
f = 1.0MHz
Coss
--
66
--
Gate Resistance
f=1MHz, open drain
Rg
--
3.2
--
td(on)
--
24
--
tr
--
28
--
td(off)
--
70
--
tf
--
60
--
VSD
--
--
1.4
V
trr
--
210
--
ns
Qrr
--
1.8
--
µC
Switching
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 380V,
RGEN = 35Ω,
ID = 11A, VGS = 10V,
Turn-Off Fall Time
ns
Source-Drain Diode (Note 4)
Forward On Voltage
IS=11A, VGS=0V
Reverse Recovery Time
VR=200V, IS=5.5A
dIF/dt=100A/µs
Reverse Recovery Charge
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
o
3. L=50mH, IAS=2.6A, VDD=50V, RG=25Ω, Starting TJ=25 C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
2/9
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
3/9
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Capacitance vs. Drain-Source Voltage
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Maximum Safe Operating Area (ITO-220)
4/9
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
Electrical Characteristics Curve
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec)
5/9
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
6/9
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
7/9
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
TO-252 (DPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
8/9
Version: A14
TSM60N380
600V, 11A, 0.38Ω
N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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9/9
Version: A14