TSM70N380

TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
ITO-220
TO-251
(IPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
700
V
RDS(on) (max)
0.38
Ω
Qg
18.8
nC
TO-252
(DPAK)
Block Diagram
Features
●
●
Super-Junction technology
High performance due to small figure-of-merit
●
●
High ruggedness performance
High commutation performance
Application
●
●
Power Supply
Lighting
Ordering Information
Package
Packing
TSM70N380CI C0G
Part No.
ITO-220
50pcs / Tube
TSM70N380CH C5G
TO-251
75pcs / Tube
N-Channel MOSFET
TSM70N380CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
o
TC = 25 C
(Note 2)
o
Total Power Dissipation @ TC=25 C
Symbol
Limit
ITO-220
IPAK/DPAK
Unit
VDS
700
V
VGS
±30
V
ID
11
A
IDM
33
A
PDTOT
33
125
Single Pulsed Avalanche Energy
(Note 3)
EAS
156
Single Pulsed Avalanche Current
(Note 3)
IAS
2.5
Operating Junction and Storage Temperature Range
TJ, TSTG
1/9
- 55 to +150
W
mJ
A
o
C
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
RӨJC
Junction to Ambient Thermal Resistance
Limit
ITO-220
IPAK/DPAK
3.8
1
RӨJA
Unit
o
C/W
o
62
C/W
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
700
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
3
4
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 700V, VGS = 0V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 3.3A
RDS(ON)
--
0.33
0.38
Ω
Qg
--
18.8
--
Qgs
--
3.7
--
Qgd
--
5.6
--
Ciss
--
981
--
Coss
--
58
--
Rg
--
3.3
--
td(on)
--
32
--
tr
--
21
--
td(off)
--
62
--
tf
--
28
--
VSD
--
--
1.4
V
trr
--
226
--
ns
Qrr
--
2.1
--
μC
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS = 380V, ID = 11A,
VGS = 10V
Output Capacitance
VDS = 100V, VGS = 0V,
f = 1.0MHz
Gate Resistance
f=1MHz, open drain
Switching
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 380V,
RGEN = 25Ω,
ID = 11A, VGS = 10V,
Turn-Off Fall Time
ns
Source-Drain Diode (Note 4)
Forward On Voltage
IS=11A, VGS=0V
Reverse Recovery Time
VR=200V, IS=5.5A
dIF/dt=100A/μs
Reverse Recovery Charge
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L=50mH, IAS=2.5A, VDD=50V, RG=25Ω, Starting TJ=25oC
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
2/9
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
3/9
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Capacitance vs. Drain-Source Voltage
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Maximum Safe Operating Area (ITO-220)
4/9
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
Electrical Characteristics Curve
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
10
1
10
0
10
-1
10
-2
10
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
-4
10
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
0
10
1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
10
1
10
0
10
-1
10
-2
10
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
-4
10
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
5/9
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
6/9
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
7/9
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
TO-252 (DPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
8/9
Version: B14
TSM70N380
700V, 11A, 0.38Ω
N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
9/9
Version: B14