TSM70N1R4

TSM70N1R4
700V, 3.3A, 1.4Ω
N-Channel Power MOSFET
TO-252
(DPAK)
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
Unit
VDS
700
V
RDS(on) (max)
1.4
Ω
Qg
7.7
nC
Block Diagram
Features
●
●
●
●
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Application
●
●
Power Supply.
Lighting
Ordering Information
Part No.
Package
Packing
TSM70N1R4CH C5G
TO-251
75pcs / Tube
N-Channel MOSFET
TSM70N1R4CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
700
V
Gate-Source Voltage
VGS
±30
V
ID
3.3
A
IDM
9.9
A
Continuous Drain Current
Pulsed Drain Current
(Note 1)
TC = 25°C
(Note 2)
Total Power Dissipation @ TC=25C
PDTOT
38
W
Single Pulsed Avalanche Energy
(Note 3)
EAS
64
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
1.6
A
TJ, TSTG
- 55 to +150
°C
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RӨJC
3.3
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
1/7
Version: A14
TSM70N1R4
700V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Electrical Specifications (TC=25°C unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
700
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
3
4
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 700V, VGS = 0V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 1.2A
RDS(ON)
--
0.9
1.4
Ω
Qg
--
7.7
--
Qgs
--
1.9
--
Qgd
--
2.8
--
Ciss
--
370
--
Coss
--
34
--
Rg
--
3.4
--
td(on)
--
14
--
tr
--
22
--
td(off)
--
24
--
tf
--
20
--
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS = 380V, ID = 3.3A,
VGS = 10V
Output Capacitance
VDS = 100V, VGS = 0V,
f = 1.0MHz
Gate Resistance
f=1MHz, open drain
Switching
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 380V,
RGEN = 25Ω,
ID = 3.3A, VGS = 10V,
Turn-Off Fall Time
ns
Source-Drain Diode (Note 4)
Forward On Voltage
IS=3.3A, VGS=0V
VSD
--
Reverse Recovery Time
VR=200V, IS=2A
dIF/dt=100A/μs
trr
--
Qrr
--
Reverse Recovery Charge
1.4
V
163
--
ns
1
--
μC
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
o
3. L=50mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25 C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
2/7
Version: A14
TSM70N1R4
700V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
3/7
Version: A14
TSM70N1R4
700V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Capacitance vs. Drain-Source Voltage
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
Normalized Effective Transient
Thermal Impedance
10
1
10
0
10
-1
10
-2
10
-3
10
-4
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec)
4/7
Version: A14
TSM70N1R4
700V, 3.3A, 1.4Ω
N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeter
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/7
Version: A14
TSM70N1R4
700V, 3.3A, 1.4Ω
N-Channel Power MOSFET
TO-252 (DPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
6/7
Version: A14
TSM70N1R4
700V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7/7
Version: A14