TSM70N1R4 700V, 3.3A, 1.4Ω N-Channel Power MOSFET TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 1.4 Ω Qg 7.7 nC Block Diagram Features ● ● ● ● Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Application ● ● Power Supply. Lighting Ordering Information Part No. Package Packing TSM70N1R4CH C5G TO-251 75pcs / Tube N-Channel MOSFET TSM70N1R4CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC=25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V ID 3.3 A IDM 9.9 A Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25°C (Note 2) Total Power Dissipation @ TC=25C PDTOT 38 W Single Pulsed Avalanche Energy (Note 3) EAS 64 mJ Single Pulsed Avalanche Current (Note 3) IAS 1.6 A TJ, TSTG - 55 to +150 °C Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 3.3 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range Thermal Performance Parameter 1/7 Version: A14 TSM70N1R4 700V, 3.3A, 1.4Ω N-Channel Power MOSFET Electrical Specifications (TC=25°C unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 700 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 700V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 1.2A RDS(ON) -- 0.9 1.4 Ω Qg -- 7.7 -- Qgs -- 1.9 -- Qgd -- 2.8 -- Ciss -- 370 -- Coss -- 34 -- Rg -- 3.4 -- td(on) -- 14 -- tr -- 22 -- td(off) -- 24 -- tf -- 20 -- Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance VDS = 380V, ID = 3.3A, VGS = 10V Output Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Gate Resistance f=1MHz, open drain Switching nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 380V, RGEN = 25Ω, ID = 3.3A, VGS = 10V, Turn-Off Fall Time ns Source-Drain Diode (Note 4) Forward On Voltage IS=3.3A, VGS=0V VSD -- Reverse Recovery Time VR=200V, IS=2A dIF/dt=100A/μs trr -- Qrr -- Reverse Recovery Charge 1.4 V 163 -- ns 1 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L=50mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/7 Version: A14 TSM70N1R4 700V, 3.3A, 1.4Ω N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/7 Version: A14 TSM70N1R4 700V, 3.3A, 1.4Ω N-Channel Power MOSFET Electrical Characteristics Curves Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area (DPAK/IPAK) Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) Normalized Effective Transient Thermal Impedance 10 1 10 0 10 -1 10 -2 10 -3 10 -4 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) 4/7 Version: A14 TSM70N1R4 700V, 3.3A, 1.4Ω N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeter Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/7 Version: A14 TSM70N1R4 700V, 3.3A, 1.4Ω N-Channel Power MOSFET TO-252 (DPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: A14 TSM70N1R4 700V, 3.3A, 1.4Ω N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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