TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 1.4 Ω Qg 7.7 nC Block Diagram Features ● ● ● ● Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Application ● ● Power Supply Lighting Ordering Information Part No. Package Packing N-Channel MOSFET TSM60N1R4CH C5G TO-251 75pcs / Tube TSM60N1R4CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Limit Unit VDS 600 V VGS ±30 V ID 3.3 A IDM 9.9 A Total Power Dissipation @ TC = 25°C PDTOT 38 W Single Pulsed Avalanche Energy (Note 3) EAS 64 mJ (Note 3) IAS 1.6 A TJ, TSTG - 55 to +150 °C Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 3.3 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TC = 25°C Pulsed Drain Current (Note 2) Single Pulsed Avalanche Current Operating Junction and Storage Temperature Range Thermal Performance Parameter 1/7 Version: A14 TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 0.88 1.4 Ω Qg -- 7.7 -- Qgs -- 1.9 -- Qgd -- 2.8 -- Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 3.3A, VGS = 10V Gate-Source Charge Gate-Drain Charge Input Capacitance Ciss -- 370 -- Output Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Coss -- 34 -- Gate Resistance f = 1MHz, open drain Rg -- 3.4 -- td(on) -- 14 -- tr -- 22 -- td(off) -- 24 -- tf -- 20 -- Switching nC pF Ω (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 3.3A, VGS = 10V, Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS = 3.3A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time VR = 200V, IS = 2A dIF/dt = 100A/μs trr -- 163 -- ns Qrr -- 1 -- μC Reverse Recovery Charge Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 50mH, IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/7 Version: A14 TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/7 Version: A14 TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Electrical Characteristics Curves BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (DPAK/IPAK) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) 10 1 10 0 10 -1 10 -2 10 -3 10 -4 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) 4/7 Version: A14 TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeter Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/7 Version: A14 TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET TO-252 (DPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: A14 TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: A14