Switching Diodes MA3J142E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Small S-mini type package contained two elements, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance, Ct Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Forward current (DC) Double Peak forward current Double Non-repetitive peak forward surge current* Double + 0.1 0.15 − 0.05 Rating 3 0.9 ± 0.1 Symbol 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 : Anode 1 2 : Anode 2 3 : Cathode 1 Cathode 2 Flat S-Mini Type Package (3-pin) 150 Single IFM 225 mA Marking Symbol: MU 340 Single IFSM 500 0.3 − 0 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 + 0.1 ■ Features 0.425 Internal Connection mA 750 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 3 Note) * : t = 1 s 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA3J142E Switching Diodes IF V F VF Ta IR V R 103 105 102 104 1.6 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 Forward voltage VF (V) Reverse current IR (nA) Forward current IF (mA) 1.4 Ta = 150°C 100°C 103 102 25°C 1.2 1.0 IF = 100 mA 0.8 0.6 10 mA 0.4 3 mA 10 0.2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 IR Ta 100 35 V 6V 103 102 10 40 80 120 40 160 Ambient temperature Ta (°C) 200 80 120 0.8 0.6 0.4 0.2 0 20 40 60 80 160 200 IF(surge) tW 1 000 1.0 0 0 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) VR = 5 V 0 −40 120 1.2 104 Reverse current IR (nA) 80 Ct VR 105 2 60 Reverse voltage VR (V) Forward voltage VF (V) 1 −40 40 100 Reverse voltage VR (V) 120 Forward surge current IF(surge) (A) 10−2 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30