Switching Diodes MA6X122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2 IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 Peak forward current*1 1.45 2 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 Symbol 5 0.8 Parameter 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.9 ± 0.2 0.95 0.95 • Four-element contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction Average forward 0.65 ± 0.15 1 6 + 0.1 ■ Features 1.5 − 0.05 0.3 − 0.05 0.65 ± 0.15 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3,4 6 : Anode 1,2 Mini Type Package (6-pin) Marking Symbol: M2A Internal Connection Note) *1 : Value for single diode *2 : t = 1 s 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 15 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 10 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA6X122 Switching Diodes IF VF IR V R 103 VF Ta 1.6 10 Ta = 150°C 1 Ta = 150°C 100°C 10 25°C − 20°C 1 10−1 10−1 10−2 25°C 10−3 10−4 0 0.2 0.4 0.6 0.8 1.0 1.2 10−5 0 Forward voltage VF (V) 20 10−3 Terminal capacitance Ct (pF) Reverse current IR (µA) 10−2 10−4 80 40 80 120 160 200 240 10 mA 0.6 3 mA 0.4 0 −40 100 120 140 0 40 80 120 4 3 2 1 20 40 60 80 200 IF(surge) tW 1 000 0 160 Ambient temperature Ta (°C) 5 0 0 Ambient temperature Ta (°C) 2 60 f = 1 MHz Ta = 25°C 35 V 1V 10−1 IF = 100 mA 0.8 Ct VR 10 10−5 −40 40 6 1 1.0 Reverse voltage VR (V) IR Ta VR = 75 V 1.2 0.2 100 Reverse voltage VR (V) 120 Forward surge current IF(surge) (A) 10−2 1.4 100°C Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) 102 Ta = 25°C IF(surge) tW Non repetitive 300 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30