Switching Diodes MA2J113 Silicon epitaxial planar type Unit : mm For switching circuits A 0.625 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Forward current (DC) IF 200 mA Peak forward current IFM 600 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.7 ± 0.1 + 0.1 0.16 − 0.06 Symbol Noe) 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.3 0.5 ± 0.1 • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA • High breakdown voltage (VR = 80 V) 1.25 ± 0.1 K ■ Features 0.4 ± 0.1 1.7 ± 0.1 0.4 ± 0.1 2.5 ± 0.2 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 1D * : t=1s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 50 nA IR1 VR = 15 V IR2 VR = 75 V 500 nA IR3 VR = 75 V, Ta = 100°C 100 µA Forward voltage (DC) VF IF = 200 mA 1.1 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 4 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 10 ns Reverse current (DC) Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA2J113 Switching Diodes IF VF IR V R 1 000 100 100 10 VF Ta 1.6 10 Ta = 150°C 1 100°C 25°C − 20°C 0.1 1.4 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) Ta = 150°C 100°C 1 0.1 25°C 1.2 1.0 IF = 200 mA 0.8 0.6 10 mA 0.4 0.01 3 mA 0.2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 20 60 80 IR Ta VR = 75 V 35 V 1.2 1.0 0.8 0.6 0.4 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 0 20 40 60 80 120 160 200 IF(surge) tW 0.2 0 40 1 000 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 6V 0.1 −40 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 1.4 1 0.01 0 −40 120 Ct VR 2.0 100 10 100 Reverse voltage VR (V) Forward voltage VF (V) Reverse current IR (µA) 40 80 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30