PANASONIC MA113

Switching Diodes
MA2J113
Silicon epitaxial planar type
Unit : mm
For switching circuits
A
0.625
Rating
Unit
Reverse voltage (DC)
VR
80
V
Peak reverse voltage
VRM
80
V
Forward current (DC)
IF
200
mA
Peak forward current
IFM
600
mA
Non-repetitive peak forward
surge current*
IFSM
1
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.7 ± 0.1
+ 0.1
0.16 − 0.06
Symbol
Noe)
1
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.3
0.5 ± 0.1
• Small S-mini type package, allowing high-density mounting
• Ensuring the average forward current capacity IF(AV) = 200 mA
• High breakdown voltage (VR = 80 V)
1.25 ± 0.1
K
■ Features
0.4 ± 0.1
1.7 ± 0.1
0.4 ± 0.1
2.5 ± 0.2
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 1D
* : t=1s
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
50
nA
IR1
VR = 15 V
IR2
VR = 75 V
500
nA
IR3
VR = 75 V, Ta = 100°C
100
µA
Forward voltage (DC)
VF
IF = 200 mA
1.1
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
4
pF
Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
10
ns
Reverse current (DC)
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA2J113
Switching Diodes
IF  VF
IR  V R
1 000
100
100
10
VF  Ta
1.6
10
Ta = 150°C
1
100°C
25°C
− 20°C
0.1
1.4
Forward voltage VF (V)
Reverse current IR (µA)
Forward current IF (mA)
Ta = 150°C
100°C
1
0.1
25°C
1.2
1.0
IF = 200 mA
0.8
0.6
10 mA
0.4
0.01
3 mA
0.2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0
20
60
80
IR  Ta
VR = 75 V
35 V
1.2
1.0
0.8
0.6
0.4
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
0
20
40
60
80
120
160
200
IF(surge)  tW
0.2
0
40
1 000
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
6V
0.1
−40
0
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
1.4
1
0.01
0
−40
120
Ct  VR
2.0
100
10
100
Reverse voltage VR (V)
Forward voltage VF (V)
Reverse current IR (µA)
40
80
100
Reverse voltage VR
(V)
120
Ta = 25°C
IF(surge)
300
tW
Non repetitive
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
Pulse width tW (ms)
10
30