PANASONIC 2SC4953

Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
■ Features
●
●
●
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
VCES
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
6
A
Collector current
IC
3
A
Base current
IB
1.2
A
Collector power TC=25°C
Ta=25°C
dissipation
30
PC
Junction temperature
Tj
Storage temperature
Tstg
3.0±0.5
2.9±0.2
φ3.2±0.1
1.4±0.2
2.6±0.1
1.6±0.2
0.8±0.1
1
2
0.55±0.15
2.54±0.3
3 5.08±0.5
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
W
2.0
■ Electrical Characteristics
15.0±0.5
●
4.6±0.2
9.9±0.3
High-speed switching
High collector to base voltage VCBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio hFE
Dielectric breakdown voltage of the package: > 5kV
13.7±0.2
4.2±0.2
●
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
100
µA
100
µA
ICBO
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
hFE1
VCE = 5V, IC = 0.1A
10
hFE2
VCE = 2V, IC = 1.2A
8
Collector to emitter saturation voltage
VCE(sat)
IC = 1.5A, IB = 0.3A
1.0
V
Base to emitter saturation voltage
VBE(sat)
IC = 1.5A, IB = 0.3A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.2A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
VCB = 500V, IE = 0
max
Collector cutoff current
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
V
40
10
MHz
1.0
µs
3.0
µs
0.3
µs
1
Power Transistors
2SC4953
IC — VCE
IC — VCE(sat)
5.0
hFE — IC
8
TC=25˚C
250mA
200mA
2.5
150mA
2.0
100mA
1.5
50mA
TC=–25˚C
6
25˚C
5
125˚C
4
3
2
1.0
1
0.5
2
4
6
8
10
12
25˚C
TC=125˚C
–25˚C
30
10
0
0.5
1.0
fT — IC
2.0
2.5
VCE=10V
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10(2IB1=–IB2)
VCC=200V
TC=25˚C
Switching time ton,tstg,tf (µs)
30
10
3
1
0.3
10
3
tstg
1
ton
0.3
tf
0.1
0.1
0.3
1
Collector current IC (A)
Area of safe operation, reverse bias ASO
4.0
IC/IB=5
Lcoil=100µH
TC=25˚C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
0.3
1
3
10
Area of safe operation (ASO)
100
Non repetitive pulse
Ta=25˚C
Ta=85˚C
30
10
ICP
t=1ms
IC
3
1s
10ms
1
0.3
0.1
0.01
0.01
0.03
0.1
Collector current IC (A)
0.03
0.03
0.1
0.01
0.003 0.01 0.03
ton, tstg, tf — IC
100
100
30
1.5
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
0
Transition frequency fT (MHz)
100
0
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE=5V
3
0
2
Forward current transfer ratio hFE
3.0
7
Collector current IC (A)
Collector current IC (A)
3.5
IB=500mA
450mA
400mA
350mA
300mA
4.0
300
IC/IB=5
4.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector current IC (A)
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)