Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm ■ Features ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 8 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C Ta=25°C dissipation 40 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 3.0±0.5 2.9±0.2 φ3.2±0.1 1.4±0.2 2.6±0.1 1.6±0.2 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package W 2.0 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Collector cutoff current 15.0±0.5 ● 4.6±0.2 9.9±0.3 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 ● Conditions min typ max Unit ICBO VCB = 80V, IE = 0 100 µA ICEO VCE = 40V, IB = 0 100 µA 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 Forward current transfer ratio hFE * VCE = 4V, IC = 0.8A 500 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.075A Transition frequency fT VCE = 12V, IC = 0.3A, f = 10MHz 30 MHz Storage time tstg IC = 3A, IB1 = 0.06A, IB2 = – 0.06A, VCC = 50V 20 µs *h FE V 2000 0.7 V Rank classification Rank hFE Q P 500 to 1200 800 to 2000 1 Power Transistors 2SD2527 IC — VCE IC — VBE VCE(sat) — IC 5 Collector to emitter saturation voltage VCE(sat) (V) 1.6 TC=25˚C Collector current IC (A) 1.2 IB=1.0mA 1.0 0.9mA 0.8mA 0.8 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 4 3 2 1 0.2mA 0.2 0.1mA 0 0 0 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) 0.8 1.0 1.2 1 10–1 10–2 10–3 10–2 103 102 10–1 1 10 Collector current IC (A) fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE 0.6 ton, tstg, tf — IC 100 300 VCE=4V VCE=12V f=10MHz TC=25˚C 100 30 10 Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=–IB2) VCC=50V TC=25˚C 30 10 tstg 3 tf 1 ton 0.3 0.1 0.03 10 10–2 10–1 1 10 Collector current IC (A) Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 Collector current IC (A) 0.4 IC/IB=40 Base to emitter voltage VBE (V) hFE — IC 104 ICP 10 t=1ms IC 10ms 3 1s 1 0.3 0.1 3 10 30 100 300 Collector to emitter voltage VCE (V) 2 0.2 Switching time ton,tstg,tf (µs) Collector current IC (A) 1.4 10 3 0.003 0.01 0.03 0.01 0.1 0.3 1 Collector current IC (A) 3 0 2 4 6 Collector current IC (A) 8