Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 1:Base 2:Collector 3:Emitter N Type Package 3 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 3 A Collector current IC 1.5 A Base current IB 0.5 A 6.0±0.3 1.0±0.1 0.8±0.1 14.7±0.5 VCBO 3.4±0.3 +0.4 Collector to base voltage Unit: mm 8.5±0.2 +0 Unit 1.5–0.4 Ratings 10.0±0.3 Symbol 2.0 Parameter Collector to emitter voltage 2 (TC=25˚C) 4.4±0.5 ■ Absolute Maximum Ratings 0.5max. 3.0–0.2 ● 1.1max. 4.4±0.5 ● 1.0±0.1 1.5max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For high breakdown voltage high-speed switching R0.5 R0.5 0 to 0.4 2.54±0.3 1.1 max. Collector power TC=25°C dissipation Ta=25°C 25 PC Junction temperature Tj Storage temperature Tstg W 1.3 ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 0.8A 8 Collector to emitter saturation voltage VCE(sat) IC = 0.8A, IB = 0.16A 1 V Base to emitter saturation voltage VBE(sat) IC = 0.8A, IB = 0.16A 1.5 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A, VCC = 150V V 25 MHz 0.7 µs 2 µs 0.3 µs 1 Power Transistors 2SC5063 IC — VCE (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 35 30 (1) 25 20 15 10 TC=25˚C 1.8 Collector current IC (A) 5 (2) (3) 0 IB=200mA 1.6 1.4 120mA 100mA 1.2 80mA 1.0 60mA 0.8 40mA 30mA 0.6 0.4 20mA 0.2 10mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 3 TC=–25˚C 100˚C 0.3 0.1 0.03 0.03 0.1 0.3 1 300 100 25˚C TC=100˚C 30 –25˚C 10 3 1 0.01 3 Cob — VCB 0.1 0.3 300 100 30 10 3 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 VCE=10V f=10MHz TC=25˚C 300 100 30 10 3 1 10 3 0.3 1 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 1 tstg tf 0.1 0.1 100 ton 0.3 0.01 0.03 Collector current IC (A) 10 3 t=0.5ms 1ms IC 1 10ms 0.3 300ms 0.1 0.03 0.01 0.01 10 –25˚C 0.1 0.1 0.001 0.003 0.03 3 0.3 1000 1 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C 30 Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C 1 25˚C Collector current IC (A) ton, tstg, tf — IC 1000 2 0.03 100 0.3 1 Collector current IC (A) 10000 1 0.1 TC=100˚C 0.3 Collector current IC (A) 3000 3 fT — IC VCE=5V IC/IB=5 10 0.01 0.01 IC/IB=5 hFE — IC 1000 1 10 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 25˚C 8 Transition frequency fT (MHz) 0 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 2.0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 0 0.5 1.0 1.5 2.0 Collector current IC (A) 2.5 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5063 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 8 Lcoil=200µH IC/IB1=5 (IB1=–IB2) TC=25˚C Collector current IC (A) 7 L coil 6 IB1 5 T.U.T –IB2 Vin 4 IC VCC ICP 3 2 Vclamp tW IC 1 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3