Power Transistors 2SC4898 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ■ Features ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage VCEO 500 V Peak collector current ICP 10 A Collector current IC 5 A Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg φ3.2±0.1 1.4±0.2 150 ˚C –55 to +150 ˚C 2.6±0.1 1.6±0.2 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package W 2 ■ Electrical Characteristics 2.9±0.2 3.0±0.5 15.0±0.5 ● 4.6±0.2 9.9±0.3 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) 13.7±0.2 4.2±0.2 ● (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 1000V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 9V, IC = 0 100 µA Forward current transfer ratio hFE VCE = 5V, IC = 1A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.6A Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 250V 20 40 1 8 V MHz 1.5 µs 3 µs 1.0 µs 1 Power Transistors 2SC4898 IC — VCE VCE(sat) — IC TC=25˚C Collector current IC (A) 9 8 7 6 IB=0.7A 5 0.6A 0.5A 0.4A 0.3A 0.2A 4 3 2 0.1A 1 0 0 2 4 6 8 10 12 1000 IC/IB=5 TC=25˚C 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Collector to emitter voltage VCE (V) Area of safe operation (ASO) 0.3 1 10 Area of safe operation, reverse bias ASO ICP 10 1ms IC 1 IC/IB=5 IB1=–IB2 Lcoil=100µH TC=25˚C 5 t=0.5ms 10ms 1s 0.1 0.01 4 3 2 1 Non repetitive pulse TC=25˚C 0.001 1 3 10 30 <1mA 0 100 300 1000 0 Collector to emitter voltage VCE (V) 200 400 600 (1) Ta=25˚C (1) Without heat sink (2) With a 100 × 80 × t2mm Al heat sink 30 (2) 10 3 1 0.3 0.3 1 3 10 800 1000 1200 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 3 6 Collector current IC (A) Collector current IC (A) 0.1 Collector current IC (A) 100 30 Time t (s) 2 hFE — IC 10 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 100 300 TC=25˚C VCE=5V 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10