PANASONIC 2SC4898

Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
■ Features
●
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1000
V
Collector to emitter voltage
VCEO
500
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Collector power TC=25°C
dissipation
Ta=25°C
40
PC
Junction temperature
Tj
Storage temperature
Tstg
φ3.2±0.1
1.4±0.2
150
˚C
–55 to +150
˚C
2.6±0.1
1.6±0.2
0.8±0.1
1
2
0.55±0.15
2.54±0.3
3 5.08±0.5
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
W
2
■ Electrical Characteristics
2.9±0.2
3.0±0.5
15.0±0.5
●
4.6±0.2
9.9±0.3
High-speed switching
High collector to base voltage VCBO
Low collector to emitter saturation voltage VCE(sat)
13.7±0.2
4.2±0.2
●
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 1000V, IE = 0
100
µA
Emitter cutoff current
IEBO
VEB = 9V, IC = 0
100
µA
Forward current transfer ratio
hFE
VCE = 5V, IC = 1A
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.6A
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 250V
20
40
1
8
V
MHz
1.5
µs
3
µs
1.0
µs
1
Power Transistors
2SC4898
IC — VCE
VCE(sat) — IC
TC=25˚C
Collector current IC (A)
9
8
7
6
IB=0.7A
5
0.6A
0.5A
0.4A
0.3A
0.2A
4
3
2
0.1A
1
0
0
2
4
6
8
10
12
1000
IC/IB=5
TC=25˚C
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
Collector to emitter voltage VCE (V)
Area of safe operation (ASO)
0.3
1
10
Area of safe operation, reverse bias ASO
ICP
10
1ms
IC
1
IC/IB=5
IB1=–IB2
Lcoil=100µH
TC=25˚C
5
t=0.5ms
10ms
1s
0.1
0.01
4
3
2
1
Non repetitive pulse
TC=25˚C
0.001
1
3
10
30
<1mA
0
100
300
1000
0
Collector to emitter voltage VCE (V)
200
400
600
(1)
Ta=25˚C
(1) Without heat sink
(2) With a 100 × 80 × t2mm Al heat sink
30
(2)
10
3
1
0.3
0.3
1
3
10
800
1000 1200
Collector to emitter voltage VCE (V)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
3
6
Collector current IC (A)
Collector current IC (A)
0.1
Collector current IC (A)
100
30
Time t (s)
2
hFE — IC
10
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
10
100
300
TC=25˚C
VCE=5V
300
100
30
10
3
1
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
10