PANASONIC 2SC4111

Power Transistors
2SC4111
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1500
V
VCES
1500
V
Collector to emitter voltage
VCEO
700
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
22
A
Collector current
IC
10
A
Base current
IB
3.5
A
Collector power TC=25°C
dissipation
Ta=25°C
150
PC
Junction temperature
Tj
Storage temperature
Tstg
3.5
■ Electrical Characteristics
4.0
2.0
2.0
10.0
1.5
1.5
2.0±0.3
Solder Dip
●
26.0±0.5
●
High-speed switching
High collector to base voltage VCBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio hFE
1.5
●
20.0±0.5
2.5
●
6.0
■ Features
3.0
20.0±0.5
2.7±0.3
3.0±0.3
1.0±0.2
0.6±0.2
5.45±0.3
10.9±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP–3L Package
W
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter to base voltage
VEBO
Conditions
min
typ
VCB = 750V, IE = 0
VCB = 1500V, IE = 0
max
Unit
10
µA
1
mA
IC = 1mA, IB = 0
7
hFE1
VCE = 5V, IC = 1A
5
hFE2
VCE = 5V, IC = 7A
3
Collector to emitter saturation voltage
VCE(sat)
IC = 7A, IB = 2.5A
5
V
Base to emitter saturation voltage
VBE(sat)
IC = 7A, IB = 2.5A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 1A, f = 0.5MHz
Storage time
tstg
IC = 6A, Lleak = 5µH,
12
µs
Fall time
tf
IB1 = 1.7A, IB2 = –1.7A
0.6
µs
Forward current transfer ratio
V
8
2
MHz
1
Power Transistors
2SC4111
PC — Ta
TC=25˚C
10
100
50
IB=2A
8
1A
6
0.7A
0.5A
4
0.2A
0.1A
2
0.05A
(3)
(2)
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
10
3
TC=–25˚C
100˚C
25˚C
0.1
0.3
12
1
3
300
100
TC=100˚C
30
25˚C
10
–25˚C
3
1
0.01 0.03
10
TC=100˚C
25˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03
0.1
0.3
Cob — VCB
1
3
10
30
10
3
1
0.3
0.1
0.3
1
3
10
Area of safe operation, horizontal operation ASO
Non repetitive pulse
TC=25˚C
ICP
IC
10
t=1ms
10ms
3
DC
1
0.3
0.1
30
f=15.75kHz, TC=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
35
Collector current IC (A)
100
3
40
30
Collector current IC (A)
300
1
Collector current IC (A)
Area of safe operation (ASO)
1000
0.3
VCE=10V
f=0.5MHz
TC=25˚C
0.1
0.01 0.03
10
100
IE=0
f=1MHz
TC=25˚C
0.1
100
Collector current IC (A)
10000
3000
3
Collector current IC (A)
VCE=5V
Collector current IC (A)
Collector output capacitance Cob (pF)
10
10
fT — IC
1000
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
30
0.1
0.01 0.03
8
IC/IB=2.8
30
hFE — IC
IC/IB=2.8
0.3
6
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
1
4
Transition frequency fT (MHz)
0
30
25
ICP
20
15
10
5
0.03
<1mA
10
0.01
1
3
10
30
100
Collector to base voltage VCB (V)
2
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(1)
150
IC — VCE
12
Collector current IC (A)
Collector power dissipation PC (W)
200
0
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
0
200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
Power Transistors
2SC4111
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
(1)
10
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3