Power Transistors 2SA1500 Silicon PNP epitaxial planar type For power switching Unit: mm 10.5±0.5 ■ Features ■ Absolute Maximum Ratings (TC=25˚C) 2.8±0.2 ● 1.4±0.1 8.0±0.2 6.7±0.3 ● 2.8±0.2 1.5±0.2 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 15.4±0.3 4.2±0.3 ● 4.5±0.2 9.5±0.2 φ3.7±0.2 Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –5 A Collector power TC=25°C Junction temperature Tj Storage temperature Tstg 40 1 150 ˚C –55 to +150 ˚C 0.6 –0.2 5.08±0.5 2 1:Base 2:Collector 3:Emitter JEDEC:TO–220(a) EIAJ:SC–46(a) 3 W 1.4 ■ Electrical Characteristics +0.1 2.54±0.3 PC Ta=25°C dissipation 0.8±0.1 2.5±0.2 9.3 Ratings 13.5±0.5 Symbol Solder Dip 1.4±0.1 Parameter (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –400V, IE = 0 –100 µA Emitter cutoff current IEBO VEB = –7V, IC = 0 –100 µA Collector to emitter voltage VCEO IC = –10mA, IB = 0 hFE1* VCE = –5V, IC = – 0.5A 20 8 Forward current transfer ratio –400 V 100 hFE2 VCE = –5V, IC = –2A Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = – 0.4A Base to emitter saturation voltage VBE(sat) IC = –2A, IB = – 0.4A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton IC = –2A, 1.0 µs Storage time tstg IB1 = – 0.4A, IB2 = 0.4A, 2.5 µs Fall time tf VCC = –100V 1.0 µs *h FE1 –1.0 –1.5 15 V V MHz Rank classification Rank Q P hFE1 20 to 60 50 to 100 1 Power Transistors 2SA1500 PC — Ta IC — VCE 40 TC=25˚C – 0.8 IB=–10mA –9mA –8mA – 0.6 (1) 30 –7mA –6mA – 0.4 20 –5mA –1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –10 –12 – 0.01 – 0.1 – 0.3 TC=–25˚C 100˚C 25˚C – 0.03 –30 –100 –300 25˚C TC=100˚C –30 –25˚C –10 –3 –1 – 0.1 – 0.01 – 0.03 – 0.1 – 0.3 Cob — VCB –3 100 30 10 3 –30 Collector to base voltage VCB 3 1 10 1 tf 0.3 –100 (V) –10 –10 ICP –3 IC t=1ms DC –1 10ms – 0.3 ton 0.1 –3 Non repetitive pulse TC=25˚C –30 tstg 3 –1 Area of safe operation (ASO) – 0.1 – 0.03 0.01 –10 10 –100 0.03 –3 30 Collector current IC (A) Collector current IC (A) Switching time ton,tstg,tf (µs) 300 –1 100 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –10 Pulsed tw=1ms Duty cycle=1% IC/IB=5(–IB1=IB2) VCC=–100V TC=25˚C 30 1000 1 – 0.1 – 0.3 –1 ton, tstg, tf — IC 100 3000 –100 VCE=–10V f=1MHz TC=25˚C 300 Collector current IC (A) 10000 –30 0.3 Collector current IC (A) IE=0 f=1MHz TC=25˚C –10 fT — IC – 0.3 –10 –3 1000 –100 –3 –1 Collector current IC (A) Transition frequency fT (MHz) –10 –3 –25˚C VCE=5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –8 IC/IB=5 –30 –1 25˚C –1 hFE — IC – 0.1 Collector output capacitance Cob (pF) –6 –1000 – 0.01 – 0.1 – 0.3 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 –1 TC=100˚C – 0.03 (3) 0 –10 – 0.1 –2mA (2) IC/IB=5 –30 – 0.3 –4mA –3mA – 0.2 10 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=1.4W) 50 – 0.3 VCE(sat) — IC –100 –1.0 Collector current IC (A) Collector power dissipation PC (W) 60 0 –1 –2 –3 Collector current IC –4 (A) –5 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 2 Power Transistors 2SA1500 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 1000 (1) 100 (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 Time t (s) 3 10 102 103 104