Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 Unit: mm 15.0±0.5 Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Peak collector current ICP 15 A Collector current IC 9 A dissipation 100 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 2.5 ■ Electrical Characteristics 4.0±0.1 15.0±0.2 2.0±0.2 ˚C –55 to +150 ˚C 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter EIAJ:SC–65(a) TOP–3 Package(a) W 150 1.4±0.3 1.1±0.1 (TC=25˚C) Parameter Symbol Conditions min typ VCB = 150V, IE = 0 Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 3V, IC = 0 hFE1 VCE = 5V, IC = 20mA 20 hFE2* VCE = 5V, IC = 1A 60 hFE3 VCE = 5V, IC = 7A 20 Forward current transfer ratio 2.0±0.1 φ3.2±0.1 Solder Dip (TC=25˚C) Parameter Collector power TC=25°C 20.0±0.3 ■ Absolute Maximum Ratings 19.0±0.3 ● 10.5±0.5 3.5 ● 16.2±0.5 ● High breakdown voltage: VCEO = 150V Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT 12.5 ● 4.5±0.2 13.0±0.5 4.0±0.1 ■ Features max Unit 50 µA 50 µA 200 Base to emitter voltage VBE VCE = 5V, IC = 7A 1.8 V Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 0.7A 2.0 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 150 pF *h FE2 Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SD2053 PC — Ta IC — VCE IC — VBE 20 120 (1) 100 80 60 40 20 TC=25˚C IB=1000mA 16 12 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA 8 100mA 50mA 4 VCE=5V Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.5W) 140 Collector current IC (A) Collector power dissipation PC (W) 160 16 25˚C TC=–25˚C 12 100˚C 8 4 20 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 10 12 –25˚C 0.1 0.03 0.01 0.003 0.001 0.1 0.3 1 3 10 30 300 TC=100˚C 100 –25˚C 25˚C 30 10 3 0.3 1 3 10 30 100 Collector current IC (A) Cob — VCB Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C 100 Non repetitive pulse TC=25˚C 30 ICP Collector current IC (A) 300 10 IC t=10ms 3 100ms DC 1 0.3 0.1 30 0.03 10 0.01 1 3 10 30 100 Collector to base voltage VCB (V) 2.0 2.4 VCE=5V f=1MHz TC=25˚C 300 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 1000 1.6 0.3 1 0.1 100 10000 3000 1.2 VCE=5V 3000 1000 0.3 0.8 fT — IC Transition frequency fT (MHz) 25˚C 1 0.4 Base to emitter voltage VBE (V) 1000 IC/IB=10 TC=100˚C 3 0 hFE — IC Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 8 10000 10 Collector current IC (A) Collector output capacitance Cob (pF) 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 4 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2053 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3