VS-26MT.., VS-36MT.. Series Datasheet

VS-26MT.., VS-36MT.. Series
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Vishay Semiconductors
Three Phase Bridge (Power Modules), 25 A to 35 A
FEATURES
• Universal, 3 way terminals: push-on, wrap
around or solder
• High thermal conductivity package, electrically
insulated case
• Center hole fixing
• Excellent power/volume ratio
• UL E300359 approved
• Nickel plated terminals solderable using lead (Pb)-free
solder; solder alloy Sn/Ag/Cu (SAC305); solder
temperature 260 °C to 275 °C
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D-63
PRODUCT SUMMARY
IO
25 A to 35 A
VRRM
100 V to 1600 V
Package
D-63
Circuit
Three phase bridge
DESCRIPTION
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation. They
are intended for use in general purpose and instrumentation
applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IO
IFSM
I2t
CHARACTERISTICS
VALUES
26MT..
VALUES
36MT..
UNITS
25
35
A
TC
70
60
°C
50 Hz
360
475
60 Hz
375
500
50 Hz
635
1130
60 Hz
580
1030
A
A2s
VRRM
100 to 1600
V
TJ
-55 to +150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-26MT..
VS-36MT..
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
10
100
150
20
200
275
40
400
500
60
600
725
80
800
900
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
IRRM MAXIMUM
AT TJ MAXIMUM
mA
2
Revision: 09-Apr-15
Document Number: 93565
1
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VS-26MT.., VS-36MT.. Series
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Vishay Semiconductors
FORWARD CONDUCTION
SYMBOL
PARAMETER
Maximum DC output current at TC
IO
120° rect. conduction angle
t = 10 ms
Maximum peak, one-cycle 
non-repetitive forward current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
VALUES
26MT..
TEST CONDITIONS
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage 
reapplied
100 % VRRM
reapplied
No voltage 
reapplied
Initial
TJ = TJ maximum
100 % VRRM
reapplied
VALUES
36MT..
UNITS
25
35
A
70
60
°C
360
475
375
500
300
400
314
420
635
1130
580
1030
450
800
410
730
I2t for time tx = I2t x tx; 0.1  tx  10 ms, VRRM = 0 V
6360
11 300
Low level of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
0.88
0.86
High level of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ maximum
1.13
1.03
Low level forward slope resistance
rt1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
7.9
6.3
High level forward slope resistance
rt2
(I >  x IF(AV)), TJ maximum
5.2
5.0
1.26
A
A2s
A2s
V
m
Maximum forward voltage drop
VFM
TJ = 25 °C, IFM = 40 Apk - per single junction
Maximum DC reverse current
IRRM
TJ = 25 °C, per junction at rated VRRM
100
µA
RMS isolation voltage
VINS
TJ = 25 °C, all terminal shorted; f = 50 Hz, t = 1 s
2700
V
1.19
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage 
temperature range
VALUES
26MT
TEST CONDITIONS
TJ, TStg
VALUES
36MT
-55 to +150
Maximum thermal resistance,
junction to case
RthJC
DC operation per bridge
(based on total power loss of bridge)
1.42
1.35
Maximum thermal resistance, 
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.2
0.2
Bridge to heatsink with screw M4
Instantaneous Forward Current (A)
160
Maximum Allowable
Case Temperature (°C)
26MT.. Series
140
120
100
+
120° (rect.)
~
80
-
60
0
5
10
15
20
25
Total Output Current (A)
Fig. 1 - Current Ratings Characteristics
30
°C
K/W
Approximate weight
Mounting torque ± 10 %
UNITS
20
g
2.0
Nm
1000
26MT.. Series
100
Per junction
10
TJ = 25 °C
TJ = 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Revision: 09-Apr-15
Document Number: 93565
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
55
50
45
10
5
15
10
10 K/W
30
25
20
R
-Δ
15
2K
/W
3K
/W
4K
/W
5K
/W
7 K/
W
35
W
20
40
K/
30
25
K/
W
7
0.
120° (rect.)
1
45
=
40
35
50
SA
Maximum Total Power Loss (W)
26MT.. Series
TJ = 150 °C
R th
Maximum Total Power Loss (W)
55
5
0
0
0
5
10
20
0
25
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
320
150
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
280
260
240
36MT.. Series
Maximum Allowable
Case Temperature (°C)
300
220
200
180
160
140
120
130
110
90
120° (rect.)
+
~
70
-
100
26MT.. Series
80
50
1
10
0
100
400
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
Peak Half Sine Wave
Forward Current (A)
280
240
200
160
120
26MT.. Series
80
0.01
0.1
20
25
30
35
40
1
Pulse Drain Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Current Ratings Characteristics
Instantaneous Forward Current (A)
Fig. 4 - Maximum Non-Repetitive Surge Current
320
15
Total Output Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
360
10
5
1000
36MT.. Series
100
Per junction
10
TJ = 25 °C
TJ = 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 09-Apr-15
Document Number: 93565
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
80
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
80
36MT.. Series
TJ = 150 °C
70
60
50
120° (rect.)
40
30
20
10
70
R
th
SA
60
/W
50
0.
K/
W
2K
40
-Δ
R
/W
3K
/W
4 K/
W
5 K/W
7 K/W
30
20
10 K/W
10
0
=
7
1K
0
0
5
15
10
20
25
30
35
0
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
500
450
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
350
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
450
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
400
300
250
200
400
350
300
250
200
150
150
36MT.. Series
36MT.. Series
100
0.01
100
1
10
100
0.1
1
Pulse Drain Duration (s)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 9 - Maximum Non-Repetitive Surge Current
ZthJC - Transient Thermal
Impedance (K/W)
10
1
Steady state value:
RthJC = 1.42 K/W
(DC operation)
0.1
26MT.. Series
per bridge
0.01
.
0.001
0.001
.
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
Revision: 09-Apr-15
Document Number: 93565
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-26MT.., VS-36MT.. Series
www.vishay.com
Vishay Semiconductors
ZthJC - Transient Thermal
Impedance (K/W)
10
Steady state value:
RthJC = 1.35 K/W
(DC operation)
1
0.1
36MT.. Series
per bridge
0.01
.
.
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
36
MT
160
1
2
3
4
1
-
Vishay Semiconductors product
2
-
Current rating code
3
-
Basic part number
4
-
Voltage code x 10 = VRRM
26 = 25 A (average)
36 = 35 A (average)
CIRCUIT CONFIGURATION
+
~
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95251
Revision: 09-Apr-15
Document Number: 93565
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D-63
DIMENSIONS in millimeters (inches)
6.35 ± 0.05 (0.25 ± 0.002)
22 ± 1 (0.87 ± 0.004)
10 ± 0.3
(0.39 ± 0.01)
0.8 ± 0.1
(0.03 ± 0.0039)
24 ± 0.5 (0.950 ± 0.02)
28.5 ± 0.15 (1.12 ± 0.006)
AC2
16.0 ± 0.3
(0.63 ± 0.012)
24 ± 0.5 (0.950 ± 0.02)
AC3
Ø5
.2 (
AC1
12.25 (0.482)
max.
0.2
0)
+
Not to scale
Revision: 09-Feb-15
Document Number: 95251
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000