VS-GBPC.. Series Datasheet

VS-GBPC.. Series
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Vishay Semiconductors
Single Phase Bridge
(Power Modules), 25 A, 35 A
FEATURES
GBPC...A
GBPC...W
PRODUCT SUMMARY
IO
25 A, 35 A
VRRM
200 V to 1200 V
Package
GBPC..A, GBPC..W
Circuit
Single phase bridge
• Universal, 3 way terminals: push-on, wrap
around or solder
• High thermal conductivity package, electrically
insulated case
• Positive polarity symbol molded on the plastic case
• Center hole fixing
• Glass passivated diode chips
• Excellent power/volume ratio
• Nickel plated terminals solderable using lead (Pb)-free
solder; Solder Alloy Sn/Ag/Cu (SAC305); Solder
temperature 260 °C to 275 °C
• Wire lead version available
• UL E300359 approved
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
A range of extremely compact, encapsulated single phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and
instrumentation applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IO
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
IFSM
I2t
VRRM
TJ
VALUES
GBPC25
25
60
400
420
790
725
VALUES
GBPC35
35
55
475
500
1130
1030
200 to 1200
-55 to +150
UNITS
A
°C
A
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-GBPC25..A (1)
VS-GBPC35..A (1)
VS-GBPC25..W
VS-GBPC35..W
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK AC
REVERSE VOLTAGE
TJ = TJ MAXIMUM
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK AC
REVERSE VOLTAGE
TJ = TJ MAXIMUM
V
IRRM MAXIMUM
AT RATED VRRM
TJ = TJ MAXIMUM
mA
IRRM MAXIMUM
DC REVERSE
CURRENT
AT TJ = 125 °C
μA
02
04
06
08
10
12
200
400
600
800
1000
1200
275
500
725
900
1100
1300
2
500
Note
(1) See Ordering Information table at the end of datasheet
Revision: 27-May-15
Document Number: 93575
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-GBPC.. Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current 
at case temperature
IO
Maximum peak, one-cycle
non-repetitive forward current
25
35
Capacitive load
20
28
60
55
t = 10 ms
400
475
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
VALUES
GBPC35
Resistive or inductive load
t = 8.3 ms
IFSM
VALUES
GBPC25
TEST CONDITIONS
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ = TJ maximum
No voltage
reapplied
100 % VRRM
reapplied
420
500
335
400
350
420
790
1130
725
1030
560
800
512
730
I2t for time tx = I2t x tx; 0.1  tx  10 ms, VRRM = 0 V
7.9
11.3
Low level of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
0.76
0.77
High level of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ maximum
0.89
0.92
Low level forward slope resistance
rt1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
8.2
4.852
High level forward slope resistance
rt2
(I >  x IF(AV)), TJ maximum
6.8
3.867
Maximum forward voltage drop
VFM
TJ = 25 °C, IFM = IFavg (arm)
1.1
Maximum DC reverse current
IRRM
TJ = 25 °C, per diode at VRRM
RMS isolation voltage base plate
VINS
f = 50 Hz, t = 1 s
UNITS
A
°C
A
A2s
kA2s
V
m
1.1
V
5.0
μA
2700
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
VALUES
GBPC25
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
Maximum thermal resistance, 
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
1.7
Instantaneous Forward Current (A)
Maximum Allowable Case Temperature (°C)
Bridge to heatsink
150
GBPC25.. Series
130
120
110
180 °
(Rect)
100
90
180 °
(Sine)
60
50
0
5
10
1.4
K/W
Mounting torque ± 10 %
70
°C
0.2
Approximate weight
80
UNITS
-55 to +150
Maximum thermal resistance, 
junction to case per bridge
140
VALUES
GBPC35
15
20
25
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
30
16
g
2.0
N·m
(lbf · in)
1000
100
TJ = 25 °C
TJ = 150 °C
10
GBPC25.. Series
1
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Revision: 27-May-15
Document Number: 93575
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GBPC.. Series
Maximum Average Forward Power Loss (W)
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Vishay Semiconductors
50
R
180°
(Sine)
180°
(Rect)
40
thS
A
=0
.7 K
/W
1K
/W
-D
elta
R
2 K/
W
30
3 K/
W
20
GBPC25.. Series
T J = 150 °C
10
0
0
5
10
15
20
Average Forward Current (A)
25
50
75
100
Maximum Allowable Ambient Temperature °C
400
At any rated load condition and with rated
VRRM applied following surge
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
350
300
250
200
150
GBPC25.. Series
100
1
10
100
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Maximum Allowable Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
Fig. 3 - Total Power Loss Characteristics
150
140
GBPC35.. Series
130
120
110
100
180 °
(Rect)
90
80
70
180 °
(Sine)
60
50
40
0
Maximum non repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated V RRM reapplied
350
300
250
200
150
100
GBPC25.. Series
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
20
30
40
Fig. 6 - Current Ratings Characteristics
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 4 - Maximum Non-Repetitive Surge Current
400
10
Average Forward Current (A)
1000
100
TJ = 25 °C
TJ = 150 °C
10
GBPC35.. Series
1
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 27-May-15
Document Number: 93575
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GBPC.. Series
Maximum Average Forward Power Loss (W)
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Vishay Semiconductors
80
R
thS
A
180°
(Sine)
180°
(Rect)
70
60
0.7
=0
.5
50
1K
/W
40
2 K/
W
30
3 K/W
K/W
-D
elta
K/W
R
20
GBPC35.. Series
TJ = 150 °C
10
0
0
5
10
15
20
25
30
Average Forward Current (A)
35
50
75
100
Maximum Allowable Ambient Temperature °C
450
At any rated load condition and with
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
400
350
300
250
200
150
GBPC35.. Series
100
1
10
100
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Transient Thermal Impedance Z thJC (K/W)
Peak Half Sine Wave Forward Current (A)
Fig. 8 - Total Power Loss Characteristics
500
450
400
Maximum non repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
rated Vrrm reapplied
350
300
250
200
150
100
0.01
GBPC35.. Series
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Steady state value
R thJC = 1.7 K/W
(DC operation)
1
0.1
0.01
GBPC25.. Series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristic
Transient Thermal Impedance Z thJC (K/W)
Peak Half Sine Wave Forward Current (A)
Fig. 9 - Maximum Non-Repetitive Surge Current
10
10
Steady state value
R thJC = 1.4 K/W
(DC Operation)
1
0.1
0.01
GBPC35.. Series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance ZthJC Characteristic
Revision: 27-May-15
Document Number: 93575
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GBPC.. Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- GBPC 35
1
2
3
12
A
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
Single phase bridge coding
25 = 25 A (average)
35 = 35 A (average)
3
-
Current rating code
4
-
Voltage code x 100 = VRRM
5
-
Diode bridge rectifier:
A = standard fast-on terminal
W = wire lead
CIRCUIT CONFIGURATION
(+)
D1
D3
D4
D2
AC1
AC2
(-)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95331
Revision: 27-May-15
Document Number: 93575
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
GBPC
DIMENSIONS FOR GBPC...A in millimeters
6.35 ± 0.03 (4 x)
0.8 ± 0.1
Ø 2.4
19 ± 1
7.6 ± 0.2
28.6 ± 0.1
17.9 ± 0.2
AC2
28.6 ± 0.1
14.2 ± 0.2
16.4 ± 0.2
AC1
Ø 5.3
16.4 ± 0.2
DIMENSIONS FOR GBPC...W in millimeters
1.0 (4 x)
33 ± 1
7.6 ± 0.2
28.6 ± 0.1
17.9 ± 0.2
5.3 ± 0.2
AC2
17.9 ± 0.2
Ø 5.3 28.6 ± 0.1
AC1
11.4 ± 0.2
12.2 ± 0.2
Revision: 27-May-15
Document Number: 95331
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000