VS-MB Series Datasheet

VS-MB Series
www.vishay.com
Vishay Semiconductors
Single Phase Bridge
(Power Modules), 25 A/35 A
FEATURES
• Universal, 3 way terminals:
Push-on, wrap around or solder
• High thermal conductivity package, electrically
insulated case
• Center hole fixing
• Excellent power/volume ratio
• UL E300359 approved
• Nickel plated terminals solderable using lead (Pb)-free
solder; Solder Alloy Sn/Ag/Cu (SAC305); Solder
temperature 260 °C to 275 °C
D-34
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IO
25 A to 35 A
VRRM
200 V to 1200 V
Package
D-34
Circuit
Single Phase Bridge
DESCRIPTION
A range of extremely compact, encapsulated single phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and
instrumentation applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IO
IFSM
I2t
VRRM
CHARACTERISTICS
VALUES
26MB-A
VALUES
36MB-A
UNITS
25
35
A
°C
TC
65
60
50 Hz
400
475
60 Hz
420
500
50 Hz
790
1130
60 Hz
725
1030
Range
TJ
A
A2s
200 to 1200
V
- 55 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
26MB..A
36MB..A
Revision: 10-Jul-13
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
20
200
275
40
400
500
60
600
725
80
800
900
100
1000
1100
120
1200
1300
IRRM MAXIMUM
AT TJ MAXIMUM
2
Document Number: 93563
1
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VS-MB Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
VALUES
26MB-A
VALUES
36MB-A
Resistive or inductive load
25
35
Capacitive load
20
28
65
60
SYMBOL
Maximum DC output current
at case temperature
IO
TEST CONDITIONS
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
I2t
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Initial 
TJ = TJ maximum
100 % VRRM
reapplied
for time tx = I2xx0.1  tx  10 ms, VRRM = 0 V
400
475
420
500
335
400
350
420
790
1130
725
1030
560
800
512
730
5.6
11.3
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
0.76
0.79
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ maximum
0.92
0.96
Low level forward slope resistance
rt1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
6.8
5.8
High level forward slope resistance
rt2
(I >  x IF(AV)), TJ maximum
5.0
4.5
1.11
1.14
TJ = 25 °C, IFM = 40 Apk (26MB)
Maximum forward voltage drop
VFM
Maximum DC reverse current
IRRM
TJ = 25 °C, per diode at VRRM
RMS isolation voltage base plate
VINS
f = 50 Hz, t = 1 s
TJ = 25 °C, IFM = 55 Apk (36MB)
tp = 400 μs
UNITS
A
°C
A
A2s
kA2s
V
m
V
10
μA
2700
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature
range
SYMBOL
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance
junction to case per bridge
RthJC
Maximum thermal resistance, 
case to heatsink
RthCS
Revision: 10-Jul-13
VALUES
36MB-A
- 55 to 150
1.7
UNITS
°C
1.2
K/W
Mounting surface, smooth, flat and greased
0.2
20
g
Bridge to heatsink
2.0
Nm
Approximate weight
Mounting torque ± 10 %
VALUES
26MB-A
Document Number: 93563
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MB Series
Vishay Semiconductors
1000
150
Instantaneous Forward Current (A)
Maximum Allowable Case temperature (°C)
www.vishay.com
26MB..A Series
130
110
180°
(Rect)
90
180°
(Sine)
70
Tj = 25 °C
Tj = 150 °C
100
10
26MB..A Series
1
0.5
50
0
5
10
15
20
25
30
Fig. 1 - Current Ratings Characteristics
1.5
2
2.5
3
3.5
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Allowable Ambient Temperature
50
26MB..A Series
TJ = 150 °C
=
3K
/W
4K
/W
5K
/W
R
20
-Δ
180°
(Rect)
30
K/
W
W
K/
2
1
40
180°
(Sine)
A
hS
Rt
Maximum Average Forward Power Loss (W)
1
Instantaneous Forward Voltage (V)
Average Forward Current (A)
7 K/W
10
10 K
/W
0
0
5
10
15
20
Average Forward Current (A)
25
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
400
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
350
300
250
200
150
26MB..A Series
100
1
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Revision: 10-Jul-13
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 3 - Total Power Loss Characteristics
450
350
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150 °C
No Voltage Reapplied
Rated VRRM Reapplied
250
150
26MB..A Series
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Document Number: 93563
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MB Series
Vishay Semiconductors
1000
150
Instantaneous Forward Current (A)
Maximum Allowable Case temperature (°C)
www.vishay.com
36MB..A Series
130
110
180°
(Rect)
90
180°
(Sine)
70
TJ = 25 °C
TJ = 150 °C
100
10
36MB..A Series
1
0.5
50
0
5
10
15
20
25
30
35
40
Fig. 6 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 7 - Forward Voltage Drop Characteristics
80
36MB..A Series
TJ = 150 °C
Rt
hS
A
180°
(Sine)
60
1K
/W
180°
(Rect)
40
=
0.
7
2K
/W
K/
W
-D
elt
a
R
3K
/W
4 K/W
5 K/W
20
7 K/W
0
0
5
10
15
20
25
30
Average Forward Current (A)
35
25
50
75
100
125
15
0
Maximum Allowable Ambient Temperature (°C)
450
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
400
350
300
250
200
150
36MB..A Series
100
1
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Revision: 10-Jul-13
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 8 - Total Power Loss Characteristics
500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150 °C
No Voltage Reapplied
Rated VRRM Reapplied
450
400
350
300
250
200
150
36MB..A Series
100
0.01
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Document Number: 93563
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MB Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
36
MB
120
A
1
2
3
4
5
1
-
Vishay Semiconductors product
2
-
Current rating code
3
-
Circuit configuration:
26 = 25 A (average)
36 = 35 A (average)
MB = Single phase european coding
4
-
Voltage code x 10 = VRRM
5
-
Diode bridge rectifier:
A = 26 MB, 36 MB series
CIRCUIT CONFIGURATION
AC
(+)
AC
(-)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 10-Jul-13
www.vishay.com/doc?95326
Document Number: 93563
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-34
DIMENSIONS in millimeters (inches)
0.8 ± 0.05
(0.03 ± 0.002)
6.35 ± 0.1
(0.25 ± 0.004)
10.5 ± 0.15
(0.41 ± 0.006)
20.3 ± 0.15
(0.80 ± 0.006)
-
~
21.5
+ 1.0
- 0.5
+ 0.039
(0.85
)
- 0.020
28.5 ± 0.15
(1.12 ± 0.006)
9.5 ± 0.5
(0.37 ± 0.020)
12.7 ± 0.1
(0.5 ± 0.004)
+
~
5.25 ± 0.15
(0.21 ± 0.006)
12.7 ± 0.1
(0.5 ± 0.004)
28.5 ± 0.15
(1.12 ± 0.006)
Not to scale
Suggested plugging force:
200 N max; axially applied to fast-on terminals
Document Number: 95326
Revision: 07-Jul-08
For technical questions, contact: [email protected]
www.vishay.com
1
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Revision: 02-Oct-12
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Document Number: 91000