96832

REVISIONS
LTR
DATE (YR-MO-DA)
APPROVED
A
Make changes to the descriptive designator under 1.2.4 and editorial changes
throughout. - lgt
DESCRIPTION
99-06-15
R. Monnin
B
Drawing updated to reflect current requirements. - gt
03-06-04
R. Monnin
C
Add a low dose rate footnote to 1.5 and Table I. Delete Neutron and Dose rate
latch-up parameters as specified under 1.5. Delete Accelerated aging test,
Neutron testing, and Dose rate induced latchup testing paragraphs as specified
under section 4.4.4. - ro
07-05-07
R. Heber
REV
SHEET
REV
SHEET
REV STATUS
REV
C
C
C
C
C
C
C
C
C
C
C
C
C
C
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
Rajesh Pithadia
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
CHECKED BY
Rajesh Pithadia
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
96-03-29
REVISION LEVEL
C
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, DUAL, HIGH SPEED, LOW POWER,
VIDEO OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
1 OF
5962-96832
14
5962-E395-07
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
F
96832
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
C
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
Generic number
Circuit function
HS-1245RH
Radiation hardened, dielectric isolated, dual,
high speed, low power video operational amplifier
with output disable
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
Descriptive designator
Terminals
GDIP1-T14 or CDIP2-T14
14
Package style
Dual-in-line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
2
1.3 Absolute maximum ratings. 1/
Voltage between V+ and V- ............................................................................
Differential input voltage ..................................................................................
Voltage at either input terminal .......................................................................
Output current .................................................................................................
Output current (50% duty cycle) ......................................................................
Junction temperature (TJ) ...............................................................................
Storage temperature range (TSTG) .................................................................
Lead temperature (soldering, 10 seconds) ......................................................
Thermal resistance, junction-to-case (θJC) .....................................................
Thermal resistance, junction-to-ambient (θJA) ................................................
Maximum package power dissipation (PD) at TA = +125°C ............................
12 V
5V
V+ to VShort circuit protected 2/
60 mA 2/
+175°C
-65°C to +150°C
+300°C
20°C/W
75°C/W
0.67 W 3/
1.4 Recommended operating conditions.
Operating supply voltage (±VS) ....................................................................... ±5 V
Load resistance (RL) ....................................................................................... ≥ 50 Ω
Ambient operating temperature range (TA) ..................................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) .................... 300 Krads (Si) 4/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous
(100% duty cycle) output current must not exceed 30 mA for maximum reliability.
3/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on θJA)
at the following rate: 13.3 mW/°C.
4/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
STANDARD
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DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
3
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and
herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Non-inverting input
Symbol
IBSP
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
VCM = 0 V
(+IN) current
M,D,P,L,R,F 2/ 3/
Channel-to-channel
∆IBSP
M,D,P,L,R,F 2/ 3/
CMSIBP
mode sensitivity
Device
type
1
01
Limits
Unit
Min
Max
-15
15
2,3
-25
25
1
-25
25
-15
15
2,3
-25
25
1
-25
25
1
VCM = 0 V
+IN current channel
+IN channel common
Group A
subgroups
01
∆VCM = ±1.8 V,
1
01
1.25
V+ = 3.2 V, V- = -6.8 V,
V+ = 6.8 V, V- = -3.2 V
2
2.85
∆VCM = ±1.2 V,
3
2.85
1
2.85
µA
µA
µA/V
V+ = 3.8 V, V- = -6.2 V,
V+ = 6.2 V, V- = -3.8 V
M,D,P,L,R,F 2/ 3/
+IN resistance
+RIN
4/
1
M,D,P,L,R,F 2/ 3/
+IN current power
PPSSIBP
supply sensitivity
01
800
2,3
350
1
350
01
kΩ
∆VSUPPLY = ±1.8 V,
1
1
V+ = 6.8 V, V- = -5 V,
V+ = 3.2 V, V- = -5 V
2
3
∆VSUPPLY = ±1.2 V,
3
3
1
3
∆VSUPPLY = ±1.8 V,
1
1
V+ = 5 V, V- = -6.8 V,
V+ = 5 V, V- = -3.2 V
2
3
∆VSUPPLY = ±1.2 V,
3
3
1
3
µA/V
V+ = 6.2 V, V- = -5 V,
V+ = 3.8 V, V- = -5 V
M,D,P,L,R,F 2/ 3/
NPSSIBP
V+ = 5 V, V- = -6.2 V,
V+ = 5 V, V- = -3.8V
M,D,P,L,R,F 2/ 3/
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
5
TABLE I. Electrical performance characteristics – Continued.
Test
Inverting input
Symbol
IBSN
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
VCM = 0 V
(-IN) current
M,D,P,L,R,F 2/ 3/
Channel-to-channel
∆IBSN
M,D,P,L,R,F 2/ 3/
CMSIBN
mode sensitivity
Device
type
1
01
Limits
Unit
Min
Max
-7.5
7.5
2,3
-25
25
1
-25
25
-10
10
2,3
-25
25
1
-25
25
1
VCM = 0 V
-IN current channel
-IN current common
Group A
subgroups
01
∆VCM = ±1.8 V,
1
01
6
V+ = 3.2 V, V- = -6.8 V,
V+ = 6.8 V, V- = -3.2 V
2
8
∆VCM = ±1.2 V,
3
8
1
8
µA
µA
µA/V
V+ = 3.8 V, V- = -6.2 V,
V+ = 6.2 V, V- = -3.8 V
M,D,P,L,R,F 2/ 3/
-IN current power
PPSSIBN
supply sensitivity
∆VSUPPLY = ±1.8 V,
1
01
5
V+ = 6.8 V, V- = -5 V,
V+ = 3.2 V, V- = -5 V
2
8
∆VSUPPLY = ±1.2 V,
3
8
1
8
∆VSUPPLY = ±1.8 V,
1
5
V+ = 5 V, V- = -6.8 V,
V+ = 5 V, V- = -3.2 V
2
8
∆VSUPPLY = ±1.2 V,
3
8
1
8
µA/V
V+ = 6.2 V, V- = -5 V,
V+ = 3.8 V, V- = -5 V
M,D,P,L,R,F 2/ 3/
NPSSIBN
V+ = 5 V, V- = -6.2 V,
V+ = 5 V, V- = -3.8 V
M,D,P,L,R,F 2/ 3/
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
6
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
1
01
Limits
Min
Output voltage swing
VOP100
VIN = -3.2 V, AV = -1,
Unit
Max
3
V
RL = 100 Ω
VIN = -3 V, AV = -1,
2,3
2.8
1
2.8
RL = 100 Ω
VIN = -3 V, AV = -1,
RL = 100 Ω,
M,D,P,L,R,F 2/ 3/
VON100
VIN = +3.2 V, AV = -1,
1
-3
2,3
-2.8
1
-2.8
RL = 100 Ω
VIN = +3 V, AV = -1,
RL = 100 Ω
VIN = +3 V, AV = -1,
RL = 100 Ω,
M,D,P,L,R,F 2/ 3/
Output voltage swing
VOP50
1
VIN = -2.7 V, AV = -1,
01
2.5
V
RL = 50 Ω
VIN = -2.25 V, AV = -1,
2
2.0
RL = 50 Ω
3
1.4
VIN = -2.25 V, AV = -1,
1
1.4
RL = 50 Ω,
M,D,P,L,R,F 2/ 3/
VON50
1
-2.5
VIN = +2.25 V, AV = -1,
2
-2.0
RL = 50 Ω
3
-1.4
VIN = +2.25 V, AV = -1,
1
-1.4
VIN = +2.7 V, AV = -1,
RL = 50 Ω
RL = 50 Ω,
M,D,P,L,R,F 2/ 3/
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
C
SHEET
7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
1
01
Limits
Min
Output current
+IOUT
5/
M,D,P,L,R,F 2/ 3/
-IOUT
M,D,P,L,R,F 2/ 3/
Quiescent power
6/
ICC
supply current
M,D,P,L,R,F 2/ 3/
IEE
RL = 100 Ω
M,D,P,L,R,F 2/ 3/
Disable power supply
6/
DISICC
current
M,D,P,L,R,F 2/ 3/
Disable output leakage
current
DOLC
+
DILLC
DILLV
V DIS = 5 V
7/
1
-50
2
-40
3
-28
1
-28
5.6
6.1
mA /
2,3
5.2
6.5
channel
1
5.2
6.5
1
-6.1
-5.6
2,3
-6.5
-5.2
1
-6.5
-5.2
01
01
4
2,3
4.25
1
4.25
01
-10
10
-10
10
01
200
1
200
1,2,3
15
1
15
1,2,3
M,D,P,L,R,F 2/ 3/
DILHV
28
1,2,3
V DIS = 0 V
M,D,P,L,R,F 2/ 3/
Disable input logic levels
1
1
M,D,P,L,R,F 2/ 3/
DILHC
28
mA
mA /
channel
µA
2.5 V
M,D,P,L,R,F 2/ 3/
Disable input current
3
1,2,3
V DIS = 0 V, VIN = ±2.5 V,
VOUT =
40
1
RL = 100 Ω, V DIS = 0 V
Max
50
2
1
RL = 100 Ω
Unit
01
0.8
1
7/
M,D,P,L,R,F 2/ 3/
µA
V
0.8
1
2.0
2,3
2.4
1
2.4
See footnotes at end of table.
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REVISION LEVEL
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SHEET
8
TABLE I. Electrical performance characteristics – Continued.
Test
Input offset voltage
Symbol
VIO
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
VCM = 0 V
M,D,P,L,R,F 2/ 3/
Channel-to-channel input
∆VIO
M,D,P,L,R,F 2/ 3/
CMRR
ratio
Device
type
1
01
Limits
Unit
Min
Max
-5
5
2,3
-10
10
1
-10
10
-7.5
7.5
2,3
-15
15
1
-15
15
1
VCM = 0 V
offset voltage mismatch
Common mode rejection
Group A
subgroups
01
∆VCM = ±1.8 V,
1
01
45
V+ = 3.2 V, V- = -6.8 V,
V+ = 6.8 V, V- = -3.2 V
2
42
∆VCM = ±1.2 V,
3
42
1
42
mV
mV
dB
V+ = 3.8 V, V- = -6.2 V,
V+ = 6.2 V, V- = -3.8 V
M,D,P,L,R,F 2/ 3/
Power supply rejection
PSRRP
ratio
∆VSUPPLY = ±1.8 V,
1
01
48
V+ = 6.8 V, V- = -5 V,
V+ = 3.2 V, V- = -5 V
2
45
∆VSUPPLY = ±1.2 V,
3
45
1
45
∆VSUPPLY = ±1.8 V,
1
48
V+ = 5 V, V- = -6.8 V,
V+ = 5 V, V- = -3.2 V
2
45
∆VSUPPLY = ±1.2 V,
3
45
1
45
dB
V+ = 6.2 V, V- = -5 V,
V+ = 3.8 V, V- = -5 V
M,D,P,L,R,F 2/ 3/
PSRRN
V+ = 5 V, V- = -6.2 V,
V+ = 5 V, V- = -3.8 V
M,D,P,L,R,F 2/ 3/
1/
2/
3/
4/
5/
6/
7/
VSUPPLY = ±5 V, AV = +1, RF = 560 Ω, RSOURCE = 0 Ω, RL = 100 Ω, and VOUT = 0 V, DIS = Floated.
Devices supplied to this drawing have been characterized through all levels M, D, P, L, R, F of irradiation. However, this
device is only tested at the 'F' level. Pre and Post irradiation values are identical unless otherwise specified in Table I.
When performing post irradiation electrical measurements for any RHA level, TA = +25°C.
These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
Guaranteed from +IN common mode rejection test by: +RIN = 1/CMSIBP.
Guaranteed from VOUT test with RL = 50 Ω by: IOUT = VOUT/50 Ω.
Individual channels share the same ICC/IEE power pins. The measured values are twice those shown in the unit column.
Those values are not measured, they are logic levels applied as conditions during test.
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REVISION LEVEL
C
SHEET
9
Device type
01
Case outline
C
Terminal
number
Terminal
symbol
1
-IN1
2
+IN1
3
Disable 1
4
V-
5
Disable 2
6
+IN2
7
-IN2
8
OUT2
9
NC
10
NC
11
V+
12
GND
13
NC
14
OUT1
FIGURE 1. Terminal connections.
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10
R1 = 1 kΩ ±5 %
R2 = 10 kΩ ±5 %
C1 = 0.01 µf
V+ = +5.0 V ±0.5 V
V- = -5.0 V ±0.5 V
FIGURE 2. Radiation exposure circuit.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b
Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
12
TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
1
1
1
1,2,3 1/
1,2,3 1/
1,2,3
1,2,3
1,2,3
1,2,3
1
1
1,2,3 2/
1
1
1
1
1
1
Device
class Q
Device
class V
1/ 2/
1/ PDA applies to subgroup 1. For class V to subgroup 1 and ∆.
2/ Delta limits (see table IIB) shall be required and the delta values shall be computed with
reference to the zero hour electrical parameters (see table I).
TABLE IIB. Post burn-in and Group C delta parameters. (TA = 25°C).
Parameters
Delta limits
VIO
±3.0 mV
IBSP
±6 µA
IBSN
±3 µA
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD883.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
13
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25°C ±5°C, after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 condition A and as specified herein.
4.4.4.2 Dose rate burnout. When required by the customer, test shall be performed on devices, Standard Evaluation Circuit
(SEC), or approved test structures at technology qualifications and after any design or process changes which may effect the
RHA capability of the process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and
as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone (614)
692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96832
A
REVISION LEVEL
C
SHEET
14
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 07-05-07
Approved sources of supply for SMD 5962-96832 are listed below for immediate acquisition information only and shall
be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised
to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate
of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of
supply at http://www.dscc.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F9683201VCA
3/
HS1-1245RH-Q
5962F9683201VCC
3/
HS1B-1245RH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Last known supplier is listed below.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
Point of contact: 1650 Robert J. Conlan Blvd.
Palm Bay, FL 32905
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.