VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series Datasheet

VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Controlled Bridge (Power Modules),
55 A to 110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
MT-K
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IO
55 A to 110 A
VRRM
800 V to 1600 V
Package
MT-K
Circuit
Three phase bridge
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IO
IFSM
I2t
CHARACTERISTICS
VALUES
5.MT...K
VALUES
9.MT...K
VALUES
11.MT...K
UNITS
55
90
110
A
TC
85
85
85
°C
50 Hz
390
950
1130
60 Hz
410
1000
1180
50 Hz
770
4525
6380
60 Hz
700
4130
5830
7700
45 250
63 800
I2t
A
A2s
A2s
VRRM
Range
800 to 1600
V
TStg
Range
-40 to 125
°C
TJ
Range
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-5.MT...K
VS-9.MT...K
VS-11.MT...K
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
80
100
120
140
160
80
100
120
140
160
800
1000
1200
1400
1600
800
1000
1200
1400
1600
900
1100
1300
1500
1700
900
1100
1300
1500
1700
800
1000
1200
1400
1600
800
1000
1200
1400
1600
IRRM/IDRM,
MAXIMUM
AT TJ = 125 °C
mA
10
20
Revision: 27-Feb-14
Document Number: 94353
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum DC output current at
case temperature
SYMBOL
IO
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms
Maximum peak, one-cycle 
forward, non-repetitive on state
surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ = TJ max.
No voltage
reapplied
100 % VRRM
reapplied
VALUES
5.MT...K
VALUES VALUES
UNITS
9.MT...K 11.MT...K
55
90
110
A
85
85
85
°C
390
950
1130
410
1000
1180
330
800
950
345
840
1000
770
4525
6380
700
4130
5830
540
3200
4510
500
2920
4120
t = 0.1 ms to 10 ms, no voltage reapplied
7700
45 250
63 800
Low level value of threshold
voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
1.17
1.09
1.04
High level value of threshold
voltage
VT(TO)2
(I >  x IT(AV)), TJ maximum
1.45
1.27
1.27
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
12.40
4.10
3.93
High level value on-state slope
resistance
rt2
(I >  x IT(AV)), TJ maximum
11.04
3.59
3.37
VTM
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction
2.68
1.65
1.57
dI/dt
TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
Maximum non-repetitve
rate of rise of turned on current
A2s
A2s
V
Low level value on-state slope
resistance
Maximum on-state voltage drop
A
m
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V, resistive load, 
gate open circuit
200
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
V
A/μs
mA
BLOCKING
PARAMETER
RMS isolation voltage
Maximum critical rate of rise of
off-state voltage
SYMBOL
TEST CONDITIONS
VISOL
TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s
4000
V
TJ = TJ maximum, linear to 0.67 VDRM, 
gate open circuit
500
V/μs
dV/dt (1)
5.MT...K
9.MT...K
11.MT...K
UNITS
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
SYMBOL
TEST CONDITIONS
9.MT...K
10
PG(AV)
2.5
IGM
TJ = TJ maximum
2.5
- VGT
VGT
TJ = - 40 °C
4.0
TJ = 25 °C
2.5
TJ = - 40 °C
IGT
Maximum gate voltage
that will not trigger
VGD
Maximum gate current 
that will not trigger
IGD
11.MT...K
UNITS
W
A
10
TJ = 125 °C
Maximum required DC gate
current to trigger
5.MT...K
PGM
Anode supply = 6 V,
resistive load
V
1.7
270
TJ = 25 °C
150
TJ = 125 °C
80
mA
0.25
V
6
mA
TJ = TJ maximum, rated VDRM applied
Revision: 27-Feb-14
Document Number: 94353
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
and storage temperature range
5.MT...K
TJ, TStg
Maximum thermal resistance,
junction to case
9.MT...K
11.MT...K
- 40 to 125
RthJC
Maximum thermal resistance,
case to heatsink per module
RthCS
0.18
0.14
0.12
DC operation per junction
1.07
0.86
0.70
120 °C rect. conduction angle per module
0.19
0.15
0.12
120 °C rect. conduction angle per junction
1.17
0.91
0.74
Approximate weight
K/W
0.03
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
to terminal
UNITS
°C
DC operation per module
Mounting surface smooth, flat and grased
to heatsink
Mounting
torque ± 10 %
TEST CONDITIONS
4 to 6
Nm
3 to 4
225
g
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
5.MT...K
0.072
0.085
0.108
0.152
0.233
0.055
0.091
0.117
0.157
0.236
9.MT...K
0.033
0.039
0.051
0.069
0.099
0.027
0.044
0.055
0.071
0.100
11.MT...K
0.027
0.033
0.042
0.057
0.081
0.023
0.037
0.046
0.059
0.082
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC


Instantaneous On-State Current (A)
130
Maximum Allowable
Case Temperature (°C)
5.MT..K Series
120
110
120°
(Rect.)
100
+
90
~
-
80
0
94353_01
10
20
30
40
50
Total Output Current (A)
Fig. 1 - Current Ratings Characteristic
1000
TJ = 25 °C
TJ = 125 °C
100
60
10
5.MT..K Series
Per junction
1
0
94353_02
1
2
3
4
5
6
7
Instantaneous On-State Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
Document Number: 94353
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
220
180
160
140
120°
(Rect.)
120
100
80
60
40
20
200
0.
3
180
160
0.5
140
0.7
0.
4
K/
W
K/
W
K/
W
K/
W
120
R
-Δ
Maximum Total Power Loss (W)
5.MT..K Series
TJ = 125 °C
200
K/W
.0 5
=0
A
R thS
/W
2K
W
0.1
K/
2
0.
Maximum Total Power Loss (W)
220
1.0
100
K/W
1.5 K
/W
80
60
40
20
0
0
0
5
Total Output Current (A)
94353_03a
0
10 15 20 25 30 35 40 45 50 55
25
50
75
100
125
Maximum Allowable Ambient
Temperature (°C)
94353_03b
Fig. 3 - Total Power Loss Characteristics
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
300
250
200
5.MT..K Series
Per junction
130
9.MT..K Series
Maximum Allowable Case
Temperature (°C)
Peak Half Sine Wave
On-State Current (A)
350
120
100
+
90
80
1
350
300
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
250
200
5.MT..K Series
Per junction
150
0.01
0.1
0
100
Fig. 5 - Maximum Non-Repetitive Surge Current
40
60
80
100
Total Output Current (A)
Fig. 6 - Current Ratings Characteristic
1000
100
1
Pulse Train Duration (s)
20
94353_06
Instantaneous On-State Current (A)
Peak Half Sine Wave
On-State Current (A)
10
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
400
94353_05
~
-
150
94353_04
120°
(Rect.)
110
94353_07
TJ = 25 °C
TJ = 125 °C
10
9.MT..K Series
Per junction
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Total Output Current
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
Document Number: 94353
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
300
K/
W
150
1.0
100
K/W
R
-Δ
0.5
W
Maximum Total Power Loss (W)
W
K/
50
200
W
K/
.05
100
0.4
K/
=0
150
3
A
120°
(Rect.)
2
0.
W
200
0.
250
R thS
250
K/
9.MT..K Series
TJ = 125 °C
12
0.
Maximum Total Power Loss (W)
300
0.7
K/W
K/W
1.5 K
/W
50
0
0
0
10
20
30
40
50
60
70
80
Total Output Current (A)
94353_08a
0
90
25
50
75
100
125
Maximum Allowable Ambient
Temperature (°C)
94353_08b
Fig. 8 - Total Power Loss Characteristics
850
750
11.MT..K Series
Maximum Allowable Case
Temperature (°C)
800
Peak Half Sine Wave
On-State Current (A)
130
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
700
650
600
550
500
9.MT..K Series
Per junction
450
120
100
+
90
80
10
1
800
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
700
600
500
400
300
0.01
9.MT..K Series
Per junction
0.1
0
Fig. 10 - Maximum Non-Repetitive Surge Current
40
60
80
100
120
Total Output Current (A)
Fig. 11 - Current Ratings Characteristic
1000
100
1
Pulse Train Duration (s)
20
94353_11
Instantaneous On-State Current (A)
900
Peak Half Sine Wave
On-State Current (A)
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
1000
94353_10
~
-
400
94353_09
120°
(Rect.)
110
94353_12
TJ = 25 °C
TJ = 125 °C
10
11.MT..K Series
Per junction
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous On-State Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
Document Number: 94353
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
350
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
K/
W
R
-Δ
150
W
/W
0.5
8K
50
200
K/
W
K/
.05
100
0.4
2
=0
150
0.3
A
120°
(Rect.)
200
0.
250
W
K/
250
300
12
0.
11.MT..K Series
TJ = 125 °C
300
R t hS
350
K/W
0.7
K/W
1.0 K
/W
100
1.5 K
50
/W
0
0
0
0
10 20 30 40 50 60 70 80 90 100 110
94353_13b
Total Output Current
94353_13a
25
50
75
100
125
Maximum Allowable Ambient
Temperature (°C)
Fig. 13 - Total Power Loss Characteristics
1000
800
700
600
500
1000
11.MT..K Series
Per junction
94353_14
900
800
700
600
500
10
11.MT..K Series
Per junction
400
0.01
400
1
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
1100
Peak Half Sine Wave
On-State Current (A)
900
Peak Half Sine Wave
On-State Current (A)
1200
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
0.1
1.0
Pulse Train Duration (s)
94353_15
Fig. 15 - Maximum Non-Repetitive Surge Current
ZthJC - Transient Thermal
Impedance (K/W)
10
1
Steady state value
RthJC = 1.07 K/W
RthJC = 0.86 K/W
RthJC = 0.70 K/W
(DC operation)
5.MT..K Series
9.MT..K Series
11.MT..K Series
0.1
0.01
Per junction
0.001
0.001
94353_16
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
Revision: 27-Feb-14
Document Number: 94353
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
1
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω;
tr = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
(a)
VGD
IGD
0.01
0.001
= 25 °C
TJ = 125 °C
0.1
TJ = -40 °C
(b)
TJ
Instantaneous Gate Voltage (V)
10
(4)
Frequency Limited by PG(AV)
5.MT...K, 9.MT...K, 11.MT...K Series
0.01
0.1
(1)
(2)
(3)
1
10
100
1000
Instantaneous Gate Current (A)
94353_17
Fig. 17 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
11
3
MT
160
1
2
3
4
5
K
S90 PbF
6
7
1
-
Vishay Semiconductors product
2
-
3
-
4
-
Current rating code:
5 = 55 A (average)
9 = 90 A (average)
11 = 110 A (average)
Circuit configuration code:
1 = Negative half-controlled bridge
2 = Positive half-controlled bridge
3 = Full-controlled bridge
Essential part number
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
7
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
A
B
C
6
1
2
4
A
C
A
B
3
1
E
Full-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
C
6
5
D
B
F
D
2
4
3
5
E
Positive half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
F
D
E
Negative half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Revision: 27-Feb-14
Document Number: 94353
7
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
24 ± 0.5
(0.94 ± 0.02)
38 ± 0.5
(1.5 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Document Number: 95004
Revision: 27-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
1
Outline Dimensions
MTK (with and without optional barrier)
Vishay Semiconductors
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
24 ± 0.5
(0.94 ± 0.02)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 95004
Revision: 27-Aug-07
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000