ISL2100A, ISL2101A ® Data Sheet May 6, 2010 100V, 2A Peak, High Frequency Half-Bridge Drivers FN6294.3 Features • Drives N-Channel MOSFET Half-Bridge The ISL2100A, ISL2101A are 100V, high frequency, half-bridge N-channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. The ISL2100A has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2101A, like those of the ISL2100A, can now safely swing to the VDD supply rail. Finally, both parts are available in a very compact 9 Ld DFN package to minimize the required PCB footprint Ordering Information • Space-Saving DFN Package • DFN Package Compliant with 100V Conductor Spacing Guidelines per IPC-2221 • Pb-Free (RoHS compliant) • Bootstrap Supply Max Voltage to 114VDC • On-Chip 1Ω Bootstrap Diode • Fast Propagation Times for Multi-MHz Circuits • Drives 1nF Load with Typical Rise/Fall Times of 10ns PART NUMBER PART TEMP. (Note) MARKING RANGE (°C) PACKAGE (Pb-Free) PKG. DWG. # ISL2100AAR3Z* 00AZ -40 to +125 9 Ld 3x3 DFN L9.3x3 ISL2101AAR3Z* 01AZ -40 to +125 9 Ld 3x3 DFN L9.3x3 ISL2100AABZ* 001ABZ -40 to +125 8 Ld SOIC M18.15 ISL2101AABZ* 01ABZ -40 to +125 8 Ld SOIC M18.15 *Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. • CMOS Compatible Input Thresholds (ISL2100A) • 3.3V/TTL Compatible Input Thresholds (ISL2101A) • Independent Inputs Provide Flexibility • No Start-Up Problems • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground or HS Slewing at High dv/dt • Low Power Consumption • Wide Supply Voltage Range (9V to 14V) • Supply Undervoltage Protection • 2.5Ω Typical Output Pull-Up/Pull-Down Resistance Applications • Telecom Half-Bridge Converters Pinouts • Telecom Full-Bridge Converters ISL2100A, ISL2101A (9 LD DFN) TOP VIEW • Two-Switch Forward Converters • Active-Clamp Forward Converters VDD 1 9 LO HB 2 8 VSS 7 LI EPAD HO 3 6 HI HS 4 5 NC • Class-D Audio Amplifiers ISL2100A, ISL2101A (8 LD SOIC) TOP VIEW VDD 1 8 LO HB 2 7 VSS HO 3 6 LI HS 4 5 HI NOTE: EPAD = Exposed PAD. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2008, 2009, 2010. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL2100A, ISL2101A Application Block Diagram +12V +100V SECONDARY CIRCUIT VDD HB DRIVE HI CONTROL HI PWM CONTROLLER LI HO HS LO DRIVE LO ISL2100A ISL2101A VSS REFERENCE AND ISOLATION Functional Block Diagram HB VDD UNDER VOLTAGE HO LEVEL SHIFT DRIVER HS HI ISL2101A UNDER VOLTAGE LO ISL2101A DRIVER LI VSS EPAD (DFN PACKAGE ONLY) *EPAD = EXPOSED PAD. THE EPAD IS ELECTRICALLY ISOLATED FROM ALL OTHER PINS. FOR BEST THERMAL PERFORMANCE CONNECT THE EPAD TO THE PCB POWER GROUND PLANE. 2 FN6294.3 May 6, 2010 ISL2100A, ISL2101A +48V +12V PWM ISL2100A ISL2101A SECONDARY CIRCUIT ISOLATION FIGURE 1. TWO-SWITCH FORWARD CONVERTER +48V SECONDARY CIRCUIT +12V PWM ISL2100A ISL2101A ISOLATION FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE-CLAMP 3 FN6294.3 May 6, 2010 ISL2100A, ISL2101A Absolute Maximum Ratings Thermal Information Supply Voltage, VDD, VHB - VHS (Notes 1, 2) . . . . . . . -0.3V to 18V LI and HI Voltages (Note 2) . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on LO (Note 2) . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on HO (Note 2) . . . . . . . . . . . . . . VHS - 0.3V to VHB + 0.3V Voltage on HS (Continuous) (Note 2) . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . 100mA Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) DFN (Notes 3, 4) . . . . . . . . . . . . . . . . . 47 3.5 SOIC (Note 3) . . . . . . . . . . . . . . . . . . . 120 N/A Max Power Dissipation at +25°C in Free Air (DFN, Note 3) . . . 2.27W Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C For Recommended soldering conditions see Tech Brief TB389. Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Maximum Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 14V Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V Voltage on HB . . VHS + 8V to VHS + 14V and VDD - 1V to VDD + 100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 1. The ISL2100A-ISL2101A are capable of derated operation at supply voltages exceeding 14V. Figure 22 shows the high-side voltage derating curve for this mode of operation. 2. All voltages referenced to VSS unless otherwise specified. 3. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. 4. For θJC, the “case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379 for details. Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. TJ = -40°C to +125°C TJ = +25°C PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS 0.1 0.25 - 0.3 mA SUPPLY CURRENTS VDD Quiescent Current IDD ISL2100A; LI = HI = 0V - VDD Quiescent Current IDD ISL2101A; LI = HI = 0V - 0.3 0.45 - 0.55 mA VDD Operating Current IDDO ISL2100A; f = 500kHz - 1.6 2.2 - 2.7 mA VDD Operating Current IDDO ISL2101A; f = 500kHz - 1.9 2.5 - 3 mA Total HB Quiescent Current IHB LI = HI = 0V - 0.1 0.15 - 0.2 mA Total HB Operating Current IHBO f = 500kHz - 2.0 2.5 - 3 mA HB to VSS Current, Quiescent IHBS LI = HI = 0V; VHB = VHS = 114V - 0.05 1 - 10 µA HB to VSS Current, Operating IHBSO f = 500kHz; VHB = VHS = 114V - 0.9 - - - mA INPUT PINS Low Level Input Voltage Threshold VIL ISL2100A 3.7 4.4 - 2.7 - V Low Level Input Voltage Threshold VIL ISL2101A 1.4 1.8 - 1.2 - V High Level Input Voltage Threshold VIH ISL2100A - 6.6 7.4 - 8.4 V High Level Input Voltage Threshold VIH ISL2101A - 1.8 2.2 - 2.4 V VIHYS ISL2100A - 2.2 - - - V RI - 210 - 100 500 kΩ VDD Rising Threshold VDDR 6.8 7.3 7.8 6.5 8.1 V VDD Threshold Hysteresis VDDH - 0.6 - - - V HB Rising Threshold VHBR 6.2 6.9 7.5 5.9 7.8 V Input Voltage Hysteresis Input Pull-down Resistance UNDERVOLTAGE PROTECTION 4 FN6294.3 May 6, 2010 ISL2100A, ISL2101A Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. (Continued) TJ = -40°C to +125°C TJ = +25°C PARAMETERS SYMBOL HB Threshold Hysteresis TEST CONDITIONS MIN TYP MAX MIN MAX UNITS - 0.6 - - - V VHBH BOOTSTRAP DIODE Low Current Forward Voltage VDL IVDD-HB = 100µA - 0.5 0.6 - 0.7 V High Current Forward Voltage VDH IVDD-HB = 100mA - 0.7 0.9 - 1 V Dynamic Resistance RD IVDD-HB = 100mA - 0.8 1 - 1.5 Ω LO GATE DRIVER Low Level Output Voltage VOLL ILO = 100mA - 0.25 0.3 - 0.4 V High Level Output Voltage VOHL ILO = -100mA, VOHL = VDD - VLO - 0.25 0.3 - 0.4 V Peak Pull-Up Current IOHL VLO = 0V - 2 - - - A Peak Pull-Down Current IOLL VLO = 12V - 2 - - - A Low Level Output Voltage VOLH IHO = 100mA - 0.25 0.3 - 0.4 V High Level Output Voltage VOHH IHO = -100mA, VOHH = VHB - VHO - 0.25 0.3 - 0.4 V Peak Pull-Up Current IOHH VHO = 0V - 2 - - - A Peak Pull-Down Current IOLH VHO = 12V - 2 - - - A HO GATE DRIVER Electrical Specifications Switching Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. PARAMETERS SYMBOL TEST CONDITIONS TJ = -40°C to +125°C TJ = +25°C MIN TYP MAX MIN MAX UNITS Lower Turn-Off Propagation Delay (LI Falling to LO Falling) tLPHL - 34 50 - 60 ns Upper Turn-Off Propagation Delay (HI Falling to HO Falling) tHPHL - 31 50 - 60 ns Lower Turn-On Propagation Delay (LI Rising to LO Rising) tLPLH - 39 50 - 60 ns Upper Turn-On Propagation Delay (HI Rising to HO Rising) tHPLH - 39 50 - 60 ns Delay Matching: Upper Turn-Off to Lower Turn-On tMON 1 8 - - 16 ns Delay Matching: Lower Turn-Off to Upper Turn-On tMOFF 1 6 - - 16 ns Either Output Rise/Fall Time (10% to 90%/90% to 10%) tRC,tFC CL = 1nF - 10 - - - ns CL = 0.1µF - 0.5 0.6 - 0.8 us Either Output Rise/Fall Time (3V to 9V/9V to 3V) tR,tF Minimum Input Pulse Width that Changes the Output tPW - - - - 50 ns Bootstrap Diode Turn-On or Turn-Off Time tBS - 10 - - - ns 5 FN6294.3 May 6, 2010 ISL2100A, ISL2101A Pin Descriptions SYMBOL DESCRIPTION VDD Positive supply to lower gate driver. Bypass this pin to VSS. HB High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. HO High-side output. Connect to gate of high-side power MOSFET. HS High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-side input. LI Low-side input. VSS Chip negative supply, which will generally be ground. LO Low-side output. Connect to gate of low-side power MOSFET. EPAD Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins. Timing Diagrams LI HI HI, LI tHPLH , tLPLH tHPHL, tLPHL LO tMOFF tMON HO, LO HO FIGURE 3. PROPAGATION DELAYS FIGURE 4. DELAY MATCHING Typical Performance Curves 10 10 IDDO (mA) IDDO (mA) T = +150°C T = +150°C 1 T = -40°C T = +125°C T = +25°C 0.1 10 100 FREQUENCY (kHz) FIGURE 5. ISL2100A IDD OPERATING CURRENT vs FREQUENCY 6 3 1 .10 T = -40°C 0.1 T = +125°C T = +25°C 1 10 3 1 .10 100 FREQUENCY (kHz) FIGURE 6. ISL2101A IDD OPERATING CURRENT vs FREQUENCY FN6294.3 May 6, 2010 ISL2100A, ISL2101A Typical Performance Curves (Continued) 10 10 T = +150°C IHBSO (mA) IHBO (mA) T = +25°C T = -40°C 1 0.1 T = +25°C 0.01 10 1 T = +150°C 0.1 T = -40°C T = +125°C T = +125°C 3 1 .10 100 0.01 10 FREQUENCY (kHz) FREQUENCY (kHz) FIGURE 7. IHB OPERATING CURRENT vs FREQUENCY FIGURE 8. IHBS OPERATING CURRENT vs FREQUENCY 450 450 VDD = VHB = 9V 400 VOLL, VOLH (mV) VOHL, VOHH (mV) 500 350 300 250 VDD = VHB = 12V 200 150 -50 0 50 TEMPERATURE (°C) 100 VDD = VHB = 9V 350 300 250 150 150 VDD = VHB = 12V VDD = VHB = 14V -50 0 50 TEMPERATURE (°C) 100 150 FIGURE 10. LOW LEVEL OUTPUT VOLTAGE vs TEMPERATURE 0.60 VDDH, VHBH (V) 7.6 7.4 VDDR 7.2 VHBR 7.0 6.8 400 200 VDD = VHB = 14V FIGURE 9. HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE VDDR, VHBR (V) 3 1 .10 100 0.50 0 50 100 TEMPERATURE (°C) 150 FIGURE 11. UNDERVOLTAGE LOCKOUT THRESHOLD vs TEMPERATURE 7 VDDH 0.45 0.40 50 VHBH 0.55 -50 0 50 TEMPERATURE (°C) 100 150 FIGURE 12. UNDERVOLTAGE LOCKOUT HYSTERESIS vs TEMPERATURE FN6294.3 May 6, 2010 ISL2100A, ISL2101A (Continued) 55 tLPLH, tLPHL, tHPLH, tHPHL (ns) tLPLH, tLPHL, tHPLH, tHPHL (ns) Typical Performance Curves tLPLH 50 tHPLH 45 40 tLPHL 35 30 tHPHL 25 20 -50 0 50 100 150 55 tLPLH 50 tHPLH 45 40 35 30 25 20 -50 0 TEMPERATURE (°C) 9 9 tMON, tMOFF (ns) tMON, tMOFF (ns) 10 8 tMOFF 6 5 3 tMON -50 0 50 8 7 6 5 tMOFF 4 3 100 2 -50 150 FIGURE 15. ISL2100A DELAY MATCHING vs TEMPERATURE 0 2.5 2.5 2.0 2.0 1.5 1.0 50 TEMPERATURE (°C) 100 150 FIGURE 16. ISL2101A DELAY MATCHING vs TEMPERATURE IOLL, IOLH (A) IOHL, IOHH (A) 150 tMON TEMPERATURE (°C) 1.5 1.0 0.5 0.5 0 100 FIGURE 14. ISL2101A PROPAGATION DELAYS vs TEMPERATURE 10 4 50 TEMPERATURE (°C) FIGURE 13. ISL2100A PROPAGATION DELAYS vs TEMPERATURE 7 tHPHL tLPHL 0 2 4 6 8 10 12 VLO, VHO (V) FIGURE 17. PEAK PULL-UP CURRENT vs OUTPUT VOLTAGE 8 0 0 2 4 6 8 10 12 VLO, VHO (V) FIGURE 18. PEAK PULL-DOWN CURRENT vs OUTPUT VOLTAGE FN6294.3 May 6, 2010 ISL2100A, ISL2101A 260 240 220 200 180 160 140 120 100 80 60 40 20 0 (Continued) IDD IHB 0 5 10 340 320 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 IDD, IHB (µA) IDD, IHB (µA) Typical Performance Curves 15 20 IDD IHB 0 5 VHS to VSS VOLTAGE (V) FORWARD CURRENT (A) 0.1 0.01 1 .10 1 .10 -3 -4 -5 -6 0.3 20 120 1 1 .10 15 FIGURE 20. ISL2101A QUIESCENT CURRENT vs VOLTAGE FIGURE 19. ISL2100A QUIESCENT CURRENT vs VOLTAGE 1 .10 10 VDD, VHB (V) VDD, VHB (V) 0.4 0.5 0.6 0.7 FORWARD VOLTAGE (V) FIGURE 21. BOOTSTRAP DIODE I-V CHARACTERISTICS 9 0. 100 80 60 40 20 0 12 13 14 15 VDD to VSS VOLTAGE (V) 16 FIGURE 22. VHS VOLTAGE vs VDD VOLTAGE FN6294.3 May 6, 2010 ISL2100A, ISL2101A Small Outline Plastic Packages (SOIC) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE N INDEX AREA 0.25(0.010) M H INCHES B M SYMBOL E -B1 M8.15 (JEDEC MS-012-AA ISSUE C) 2 3 L SEATING PLANE -A- A D h x 45° MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.1890 0.1968 4.80 5.00 3 E 0.1497 0.1574 3.80 4.00 4 e -C- e α A1 B 0.25(0.010) M C 0.10(0.004) C A M 0.050 BSC - 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 α NOTES: 1.27 BSC H N B S MILLIMETERS 8 0° 8 8° 0° 7 8° Rev. 1 6/05 5. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 6. Dimensioning and tolerancing per ANSI Y14.5M-1982. 7. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 8. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 9. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 10. “L” is the length of terminal for soldering to a substrate. 11. “N” is the number of terminal positions. 12. Terminal numbers are shown for reference only. 13. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 14. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 10 FN6294.3 May 6, 2010 ISL2100A, ISL2101A Dual Flat No-Lead Plastic Package (DFN) L9.3x3 2X 9 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE 0.15 C A A D MILLIMETERS 2X 0.15 C B E SYMBOL MIN 0.80 0.90 1.00 - - - 0.05 - 0.20 REF 0.20 D D2 B A C SEATING PLANE 2.00 0.80 1 6 4, 7 2.10 6, 7 - 0.95 1.05 6, 7 0.50 BSC - 0.08 C k 0.60 - - - L 0.25 0.35 0.45 7 N D2 9 2 Rev. 0 3/06 7 NOTES: D2/2 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. 2 2. N is the number of terminals. 3. All dimensions are in millimeters. Angles are in degrees. NX k 4. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. (DATUM A) E2/2 E2 5. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. NX L N 6. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. N-1 NX b 7 E2 0.30 3.00 BSC e A3 SIDE VIEW (DATUM B) 5 INDEX AREA 0.10 C 0.25 - 3.00 BSC 1.85 E // NOTES A b TOP VIEW MAX A1 A3 5 INDEX AREA NOMINAL e (Nd-1)Xe REF. BOTTOM VIEW 4 0.10 M C A B 7. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 8. COMPLIANT TO JEDEC MO-229-WEED-3 except for dimensions E2 & D2. CL NX (b) (A1) 8 L 4 e SECTION "C-C" C C TERMINAL TIP FOR ODD TERMINAL/SIDE All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 11 FN6294.3 May 6, 2010