TSM850N06CX 60V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 60 V RDS(on) (max) VGS = 10V 85 VGS = 4.5V 100 Qg 9.3 nC Block Diagram Ordering Information Part No. mΩ Package Packing TSM850N06CX RFG SOT-23 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 6.1 A 3.9 A IDM 24.4 A EAS 25 mJ Power Dissipation @ TC = 25°C PD 1.56 W Operating Junction Temperature TJ 150 °C TSTG -50 to +150 °C Symbol Limit Unit RӨJA 80 °C/W Parameter TC = 25°C Continuous Drain Current Pulsed Drain Current TC = 100°C (Note 1) Single Pulse Avalanche Energy (Note 2) Storage Temperature Range ID Thermal Performance Parameter Thermal Resistance - Junction to Ambient 1/5 Version: A14 TSM850N06CX 60V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 60 -- -- V -- 76 85 -- 89 100 1.2 2.0 2.5 -- -- 1 -- -- 10 Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 3A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 3) VDS = 60V, VGS = 0V VDS = 48V, TJ = 125°C RDS(on) VGS(TH) IDSS mΩ V µA VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA VDS = 10V, ID = 3A gfs -- 7 -- S Qg -- 9.3 -- Qgs -- 2.1 -- Qgd -- 1.8 -- Ciss -- 500 -- Coss -- 45 -- Crss -- 16 -- td(on) -- 2.9 -- tr -- 9.5 -- td(off) -- 18.4 -- tf -- 5.3 -- IS -- -- 6.1 A ISM -- -- 24.4 A Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge Gate-Drain Charge (Note 3,4) (Note 3,4) VDS = 48V, ID = 6A, VGS = 10V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time (Note 3,4) Turn-On Rise Time (Note 3,4) Turn-Off Delay Time VDD = 30V, ID = 1A, (Note 3,4) VGS = 10V, RG = 3.3Ω Turn-Off Fall Time (Note 3,4) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode Forward Current the MOSFET Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V VGS = 30V, IS = 1A dIF/dt = 100A/µs trr -- 23.2 -- ns Qrr -- 14.3 -- nC Reverse Recovery Time (Note 3) Reverse Recovery Charge (Note 3) Note: 1. Pulse width limited by safe operating area 2. L = 1mH, IAS = 7A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. 2/5 Version: A14 TSM850N06CX 60V N-Channel Power MOSFET Electrical Characteristics Curve Gate Charge Waveform ID, Continuous Drain Current (A) Normalized Gate Threshold Voltage (V) Output Characteristics VDS, Drain to Source Voltage (V) Threshold Voltage vs. Junction Temperature ID, Continuous Drain Current (A) Normalized Gate Threshold Voltage (V) Continuous Drain Current vs. TC Qg, Gate Charge (nC) TC, Case Temperature (°C) Normalized Thermal Transient Impedance Curve ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Maximum Safe Operating Area TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) 3/5 Square Wave Pulse Duration (s) Version: A14 TSM850N06CX 60V N-Channel Power MOSFET SOT-23 Mechanical Drawing Unit: Millimeters Marking Diagram 85 = Device Code Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: A14 TSM850N06CX 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A14