TSM2328 100V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 100 V RDS(on) (max) 250 mΩ Qg 11.1 nC Block Diagram Features ● Low RDS(ON) 250mΩ (Max.) ● Low gate charge typical @ 11.1nC (Typ.) ● High performance trench technology Ordering Information Part No. Package Packing TSM2328CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 1.5 A IDM 6 A IS 0.6 A Total Power Dissipation @ TA = 25 C PD 1.38 W Operating Junction Temperature TJ 150 Continuous Drain Current Pulsed Drain Current (Note 1) Continuous Source Current (Diode Conduction) o Storage Temperature Range TSTG -55 to +150 Symbol Limit ºC o C Thermal Performance Parameter Thermal Resistance - Junction to Foot RӨJF Thermal Resistance - Junction to Ambient RӨJA 1/5 Unit 55 o 100 o C/W C/W Version: B14 TSM2328 100V N-Channel MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 100 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1.5A RDS(ON) -- -- 250 mΩ Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.0 -- 2.5 V Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA On-State Drain Current VDS = 5V, VGS = 10V ID(ON) 6 -- -- A Forward Transfer Conductance VDS = 15V, ID = 1.5A gfs -- 4 -- S Diode Forward Voltage IS = 1A, VGS = 0V VSD -- 1.2 -- V Qg -- 11.1 -- Qgs -- 4.4 -- Qgd -- 3 -- Ciss -- 975 -- Coss -- 38 -- Crss -- 27 -- td(on) -- 9 -- tr -- 9.4 -- td(off) -- 26.8 -- tf -- 2.6 -- Dynamic (Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80V, ID = 1.5A, VGS = 5V Input Capacitance Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Switching nC pF (Note 3) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 30V, ID = 1A, VGEN = 10V, RL =30Ω, RG =6Ω Turn-Off Fall Time ns Note: 1. Limited by maximum junction temperature. 2. Pulse test: pulse width ≤300µs, duty cycle ≤2%. 3. Guaranteed by design, not subject to production testing 2/5 Version: B14 TSM2328 100V N-Channel MOSFET Electrical Characteristics Curve Typical Output Characteristic Gate Charge On-Resistance vs. Gate-Source Voltage Source-Drain Diode Forward Voltage Normalized VGS(TH) vs. Junction Temperature Normalized RDS(ON) vs. Junction Temperature 3/5 Version: B14 TSM2328 100V N-Channel MOSFET SOT-23 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: B14 TSM2328 100V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: B14