TSM250N02DCQ

TSM250N02DCQ
20V Dual N-Channel MOSFET
TDFN 2x2
Key Parameter Performance
Pin Definition:
1. Source 1
6. Drain 1
2. Gate 1
5. Gate 2
3. Drain 2
4. Source 2
Parameter
Value
Unit
VDS
20
V
RDS(on) (max)
VGS = 4.5V
25
VGS = 2.5V
35
VGS = 1.8V
55
Qg
Features
7.7
mΩ
nC
Block Diagram
Suitable for 1.8V drive applications
Low profile package
Ordering Information
Part No.
Package
Packing
TSM250N02DCQ RFG TDFN 2x2
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Dual N-Channel MOSFET
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
ID
5.8
A
IDM
23.2
A
Maximum Power Dissipation @ TC=25 C
PD
1
W
Operating Junction Temperature
TJ
+150
°C
TJ, TSTG
- 55 to +150
°C
Symbol
Limit
Unit
RӨJA
80
°C/W
Continuous Drain Current
Pulsed Drain Current
(Note 1)
o
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance Junction to Ambient
1/5
Version: A14
TSM250N02DCQ
20V Dual N-Channel MOSFET
Electrical Specifications (TC=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS=0V, ID =250µA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS=VGS, ID =250µA
VGS(TH)
0.4
0.6
0.8
V
Gate-Source Leakage Current
VGS=±10V, VDS=0V
IGSS
--
--
±100
nA
Drain-Source Leakage Current
VDS=16V, VGS=0V
IDSS
--
--
1
µA
--
20
25
--
27
35
--
39
55
gfs
--
6.5
--
Qg
--
7.7
11
Qgs
--
0.9
1
Qgd
--
2.4
5
Ciss
--
535
775
Coss
--
60
85
Crss
--
34
50
td(on)
--
4.1
8
tr
--
11.6
22
td(off)
--
23.9
45
tf
--
7.6
14
IS
--
--
5.8
A
ISM
--
--
23.2
A
VSD
--
--
1
V
VGS=4.5V, ID=4A
Drain-Source On-State Resistance
VGS=2.5V, ID=3A
RDS(ON)
VGS=1.8V, ID=2A
Forward Transconductance
(Note 2)
VDS=10V, ID=3A
mΩ
S
Dynamic
(Note 2,3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2,3)
(Note 2,3)
VDS=10V, ID=4A,
VGS=4.5V
Input Capacitance
VDS=10V, VGS=0V,
Output Capacitance
f=1MHz
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 2,3)
(Note 2,3)
VDD=10V, ID=1A,
VGS=4.5V, RG=25Ω
(Note 2,3)
ns
Drain-Source Diode Characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
VG=VD=0V,
Force Current
VGS=0V, IS=-1A,
o
TJ=25 C
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. Pulse test: Pulse width ≤300µs, duty cycle ≤2%.
3. Essentially independent of operating temperature.
2/5
Version: A14
TSM250N02DCQ
20V Dual N-Channel MOSFET
Electrical Characteristics Curve
Continuous Drain Current vs. TC
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
3/5
Version: A14
TSM250N02DCQ
20V Dual N-Channel MOSFET
TDFN2x2 Mechanical Drawing
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A14
TSM250N02DCQ
20V Dual N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A14