MBR730 - MBR760 7.5A SCHOTTKY BARRIER RECTIFIER Features · · Schottky Barrier Chip · · · · Low Power Loss, High Efficiency · Lead Free Finish, RoHS Compliant (Note 4) Guard Ring Die Construction for Transient Protection TO-220AC L High Surge Capability B High Current Capability and Low Forward Voltage Drop C For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application D K A Mechanical Data Pin 1 Pin 2 E · · Case: TO-220AC · · Moisture Sensitivity: Level 1 per J-STD-020C · · · M G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 J N R Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 Pin 1 + Pin 2 - Marking: Type Number Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 J 0.69 0.93 K 3.54 3.78 L 4.07 4.82 M 1.15 1.39 0.50 N 0.30 + P 2.04 2.79 Case R 4.83 5.33 P Polarity: See Diagram Dim All Dimensions in mm Weight: 2.3 grams (approx.) Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop (Note 3) Symbol MBR 730 MBR 735 MBR 740 MBR 745 MBR 750 MBR 760 Unit VRRM VRWM VR 30 35 40 45 50 60 V VR(RMS) 21 24.5 28 31.5 35 42 V IO 7.5 A IFSM 150 A @ IF = 7.5A, TJ = 25°C @ IF = 7.5A, TJ = 125°C @ IF = 15A, TJ = 25°C @ IF = 15A, TJ = 125°C VFM ¾ 0.57 0.84 0.72 0.75 0.65 ¾ ¾ V @ TJ = 25°C @ TJ = 125°C IRM 0.1 15 0.5 50 mA Peak Reverse Current at Rated DC Blocking Voltage CT 400 pF Typical Thermal Resistance Junction to Case (Note 1) RqJc 3.5 °C/W Voltage Rate of Change (Rated VR) dV/dt 10,000 V/ms Tj -55 to +150 °C TSTG -55 to +175 °C Typical Total Capacitance (Note 2) Operating Temperature Range Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Short duration test pulse used to minimize self-heating effect. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23007 Rev. 9 - 2 1 of 3 www.diodes.com MBR730-MBR760 ã Diodes Incorporated 100 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD CURRENT (A) 10 8 6 4 2 MBR730 - MBR745 10 MBR750 - MBR760 1.0 0.1 0 0 50 100 0.1 150 TC, CASE TEMPERATURE (° C) Fig. 1 Fwd Current Derating Curve 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ Instantaneous Fwd Characteristics 175 4000 8.3 ms Single half sine-wave (JEDEC method) f = 1.0MHz 150 CT, CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 0.2 125 100 75 1000 50 100 25 1 10 0.1 100 1.0 IR, INSTANTANEOUS REVERSE CURRENT (mA) 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 10 Tj = 125° C 1.0 0.1 Tj = 75° C 0.01 Tj = 25° C Resistive or Inductive load 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23007 Rev. 9 - 2 2 of 3 www.diodes.com MBR730-MBR760 Ordering Information (Note 5) Device Packaging Shipping MBR7xx* TO-220AC 50/Tube * xx = Device type, e.g. MBR745 Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS23007 Rev. 9 - 2 3 of 3 www.diodes.com MBR730-MBR760