1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product 0.5W Hermetically Sealed Glass Zener Diodes FEATURES - Zener voltage range 2.4 to 56 volts - DO-35 package - Through-hole device type mounting - Hemetically sealed glass - Compression bonded construction - All extermal surfaces are corrosion resistant and leads are readily solderable DO-35 - ROHS complaint - Solder hot dip Tin(Sn) lead finish - Cathode indicated by polarity band - Packing code with suffix "G" means Halogen-free MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER Power dissipation Forward Voltage @IF=200mA Operating and Storage Temperature Range Document Number: DS_S1410003 SYMBOL PD VF VALUE UNITS 500 mW 1.1 V TJ , TSTG 100 °C Version: F1603 1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PART NO. PACKING PACKING CODE SUFFIX (Note 2) CODE SUFFIX 1N52xxB (Note 1) R0 -xx PACKAGE 10K / 14" Reel DO-35 G A0 PACKING 5K / Box (Ammo) Note 1: "xx" defines voltage from 2.4V (1N5221B) to 56V (1N5263B) Note 2: Part No. Suffix „-xx “ would be used for special requirement EXAMPLE PREFERRED PART NO. PART NO. PART NO. 1N5221B R0G 1N5221B 1N5221B-L0 R0G 1N5221B 1N5221B-B0 R0G 1N5221B SUFFIX PACKING CODE PACKING CODE DESCRIPTION SUFFIX R0 G Multiple manufacture source Halogen free L0 R0 G Define manufacture source Halogen free B0 R0 G Define manufacture source Halogen free RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) 1.3 VZtn - Relative Voltage Change RthJA - Therm. Resist. Junction Ambient (K/W) 500 400 300 200 100 0 0 5 10 15 8 x 10-4/K TKVZ = 10 x 101.1 6 x 10- 1.0 2 x 104/K 0 - 2 x 10- 0.9 - 4 x 10- 4 x 10- 0.8 -60 20 I - Lead Length (mm) VZtn = VZt/VZ (25 °C) 1.2 0 60 120 180 240 Tj - Junction Temperature (°C) Fig. 3 Typical Change of Working Voltage VS. Junction Fig. 1 Thermal Resistance VS. Lead Length 600 1000 Ptot - Total Power Dissipation (mW) VZ - Voltage Change (mV) 500 Tj = 25oC 100 IZ = 5 mA 10 400 300 200 100 0 1 0 5 10 15 20 25 VZ - Z-Voltage (V) Fig. 2 Typical Change of Working Voltage under Operating Conditions at Tamb = 25 oC Document Number: DS_S1410003 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) Fig.4 Total Power Dissipation VS. Ambient Temperature Version: F1603 1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product 100 TKVZ - Temperature Coefficient of VZ (10-4/K) 15 80 IZ - Z-Current (mA) 10 5 IZ = 5 mA 0 -5 0 10 20 30 40 Ptot = 500 mW Tamb = 25 oC 60 40 20 0 50 0 2 4 VZ - Z-Voltage (V) Fig. 5 Temperature Coefficient of Vz VS. Z-Voltage 8 10 Fig.8 Z-Current VS. Z-Voltage 50 200 40 150 IZ - Z-Current (mA) CD - Diode Capacitance (pF) 6 VZ - Z-Voltage (V) VR = 2 V Tj = 25oC 100 50 Ptot = 500 mW Tamb = 25 °C 30 20 10 0 0 0 5 10 15 20 15 25 20 25 30 35 VZ - Z-Voltage (V) VZ - Z-Voltage (V) Fig. 9 Z-Current VS. Z-Voltage Fig.6 Diode Capacitance VS. Z-Voltage 1000 100 IZ = 1 mA 1 rZ - Differiential Z-Resistance (Ω) IF - Forward Current (mA) 10 Tj = 25oC 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 7. Forward Current VS. Forward Voltage Document Number: DS_S1410003 100 5 mA 10 Tj = 25oC 10 mA 1 0 5 10 15 20 25 VZ - Z-Voltage (V) Fig.10 Differential Z-Resistance VS. Z-Voltage Version: F1603 1N5221B - 1N5263B Taiwan Semiconductor Zthp –The rmal Resistance for Pulse Cond. (KW) Small Signal Product 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse tp/T = 0.01 10 R thJA = 300 K/W T = T jmax –Tamb tp/T = 0.02 tp/T = 0.1 tp/T = 0.05 iZM = (–VZ +(VZ2+ 4rzj x T/Zthp) 1 / 2) /(2rzj ) 1 0.1 1.0 10.0 100.0 1000.0 tp – Pulse Length (ms) Fig. 11 Thermal Response Document Number: DS_S1410003 Version: F1603 1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product Electrical Characteristics (Ratings at TA=25oC ambient temperature unless otherwise specified) Device Vz @ Izt Current ZZT @ IZT ZZK @IZK=0.25mA IR @ VR Voltage IZT Ω Ω μA VR Nominal (mA) Max. Max. Max. (Volts) 1N5221B 2.4 20 30 1200 100 1.0 1N5222B 2.5 20 30 1250 100 1.0 1N5223B 2.7 20 30 1300 75 1.0 1N5224B 2.8 20 30 1400 75 1.0 1N5225B 3.0 20 29 1600 50.0 1.0 1N5226B 3.3 20 28 1600 25.0 1.0 1N5227B 3.6 20 24 1700 15.0 1.0 1N5228B 3.9 20 23 1900 10.0 1.0 1N5229B 4.3 20 22 2000 5.0 1.0 1N5230B 4.7 20 19 1900 5.0 2.0 1N5231B 5.1 20 17 1600 5.0 2.0 1N5232B 5.6 20 11 1600 5.0 3.0 1N5233B 6.0 20 7 1600 5.0 3.5 1N5234B 6.2 20 7 1000 5.0 4.0 1N5235B 6.8 20 5 750 3.0 1N5236B 7.5 20 6 500 3.0 5.0 6.0 1N5237B 8.2 20 8 500 3.0 6.5 1N5238B 8.7 20 8 600 3.0 6.5 1N5239B 9.1 20 10 600 3.0 7.0 1N5240B 10 20 17 600 2.0 8 1N5241B 11 20 22 600 1.0 8.4 1N5242B 12 20 30 600 0.5 9 1N5243B 13 9.5 13 600 0.1 10 1N5244B 14 9.0 15 600 0.1 10 1N5245B 15 8.5 16 600 0.1 11 1N5246B 16 7.8 17 600 0.1 12 1N5247B 17 7.4 19 600 0.1 13 1N5248B 18 7.0 21 600 0.1 14 1N5249B 19 6.6 23 600 0.1 14 1N5250B 20 6.2 25 600 0.1 15 1N5251B 22 5.6 29 600 0.1 17 1N5252B 24 5.2 33 600 0.1 18 1N5253B 25 5.0 35 600 0.1 18 1N5254B 27 4.6 41 600 0.1 21 1N5255B 28 4.5 44 600 0.1 21 1N5256B 30 4.2 49 600 0.1 23 Document Number: DS_S1410003 Version: F1603 1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product Vz @ Izt Device Current ZZT @ IZT ZZK @IZK=0.25mA IR @ VR VR Voltage IZT Ω Ω μA Nominal (mA) Max. Max. Max. (Volts) 1N5257B 33 3.8 58 700 0.1 25 1N5258B 36 3.4 70 700 0.1 27 1N5259B 39 3.2 80 800 0.1 30 1N5260B 43 3.0 93 900 0.1 33 1N5261B 47 2.7 105 1000 0.1 36 1N5262B 51 2.5 125 1100 0.1 39 1N5263B 56 2.2 150 1300 0.1 43 Notes: 1. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on price, availability and delivery. 2. The zener voltage(VZ) is tested under pulse condition. The measured VZ is guaranteed to be within specification with device junction in thermal equilibrium. 3. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current (IZT) is superimposed to IZT. 4. Zener voltage has a standard tolerance on the nominal zener voltage of ±5%. Document Number: DS_S1410003 Version: F1603 1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product PACKAGE OUTLINE DIMENSIONS DO-35 DIM. Unit (mm) Unit (inch) Min Max Min Max A 0.34 0.60 0.013 0.024 B 2.90 5.08 0.114 0.200 C 25.40 38.10 1.000 1.500 D 1.30 2.28 0.051 0.090 MARKING DIAGRAM 1N 52 XX B Document Number: DS_S1410003 Version: F1603 1N5221B - 1N5263B Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1410003 Version: F1603