Formosa MS Zener Diode 1N5221B THRU 1N5267B List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings .............................................................................. 2 Electrical characteristics................................................................... 3 Rating and characteristic curves........................................................ 4.5 Pinning information........................................................................... 6 Taping & bulk specifications for AXIAL devices.................................... 6 Suggested thermal profiles for soldering processes............................. 7 High reliability test capabilities...........................................................8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS Zener Diode 1N5221B THRU 1N5267B 500mW Surface Mount Zener Diodes - 2.4V-75V Package outline Features DO-35G • Silicon epitaxial planar chip structure. • Leaded glass hermetically sealed package. • Wide zener reverse voltage range 2.4V to 75V. • Standard zener voltage tolerance ±5% with a "B" suffix. • Other tolerance are available upon request. • Lead-free parts meet environmental standards of 0.022 (0.56) 0.018 (0.46) DIA. 1.02 (26.0) MIN. MIL-STD-19500 /228 0.165 (4.2) MAX. 0.079 (2.0) DIA. MAX. 1.02 (26.0) MIN. Mechanical data • Case : Glass, DO-35G • Terminals :Plated terminals, solderable per MIL-STD-750, Dimensions in inches and (millimeters) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.12 gram Maximum ratings (at T =25 C unless otherwise noted) o A PARAMETER Forward voltage CONDITIONS I F = 100 mA DC MIN. TYP. VF Power Dissipation PD Storage temperature Operating temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Symbol Page 2 MAX. UNIT 1.10 V 500 mW T STG -65 +175 o C TJ -55 +150 o C Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8 Electrical characteristics (at T =25 C unless otherwise noted) o A Part No. Marking code Zener voltage Test current Zener impedance Leakage current V Z @ I ZT I ZT Z ZT @ I ZT Z ZK @ I ZK I ZK IR VR I Surge Volts mA OHMs OHMs mA uA Volts mA Surge current 1N5221B 1N5221B 2.4 20.0 30 1200 0.25 100 1.0 1N5222B 1N5222B 2.5 20.0 30 1250 0.25 100 1.0 1N5223B 1N5223B 2.7 20.0 30 1300 0.25 75 1.0 1N5224B 1N5224B 2.8 20.0 30 1400 0.25 75 1.0 1N5225B 1N5225B 3.0 20.0 29 1600 0.25 50 1.0 1N5226B 1N5226B 3.3 20.0 28 1600 0.25 25 1.0 1N5227B 1N5227B 3.6 20.0 24 1700 0.25 15 1.0 1N5228B 1N5228B 3.9 20.0 23 1900 0.25 10 1.0 1N5229B 1N5229B 4.3 20.0 22 2000 0.25 5.0 1.0 1N5230B 1N5230B 4.7 20.0 19 1900 0.25 5.0 2.0 1N5231B 1N5231B 5.1 20.0 17 1600 0.25 5.0 2.0 1N5232B 1N5232B 5.6 20.0 11 1600 0.25 5.0 3.0 1N5233B 1N5233B 6.0 20.0 7 1600 0.25 5.0 3.5 1N5234B 1N5234B 6.2 20.0 7 1000 0.25 5.0 4.0 1N5235B 1N5235B 6.8 20.0 5 750 0.25 3.0 5.0 1N5236B 1N5236B 7.5 20.0 6 500 0.25 3.0 6.0 1N5237B 1N5237B 8.2 20.0 8 500 0.25 3.0 6.5 1N5238B 1N5238B 8.7 20.0 8 600 0.25 3.0 6.5 1N5239B 1N5239B 9.1 20.0 10 600 0.25 3.0 7.0 1N5240B 1N5240B 10 20.0 17 600 0.25 3.0 8.0 1N5241B 1N5241B 11 20.0 22 600 0.25 2.0 8.4 1N5242B 1N5242B 12 20.0 30 600 0.25 1.0 9.1 1N5243B 1N5243B 13 9.5 13 600 0.25 0.5 9.9 1N5244B 1N5244B 14 9.0 15 600 0.25 0.1 10 1N5245B 1N5245B 15 8.5 16 600 0.25 0.1 11 1N5246B 1N5246B 16 7.8 17 600 0.25 0.1 12 1N5247B 1N5247B 17 7.4 19 600 0.25 0.1 13 1N5248B 1N5248B 18 7.0 21 600 0.25 0.1 14 1N5249B 1N5249B 19 6.6 23 600 0.25 0.1 14 1N5250B 1N5250B 20 6.2 25 600 0.25 0.1 15 1N5251B 1N5251B 22 5.6 29 600 0.25 0.1 17 1N5252B 1N5252B 24 5.2 33 600 0.25 0.1 18 1N5253B 1N5253B 25 5.0 35 600 0.25 0.1 19 1N5254B 1N5254B 27 4.6 41 600 0.25 0.1 21 1N5255B 1N5255B 28 4.5 44 600 0.25 0.1 21 1N5256B 1N5256B 30 4.2 49 600 0.25 0.1 23 1N5257B 1N5257B 33 3.8 58 700 0.25 0.1 25 1N5258B 1N5258B 36 3.4 70 700 0.25 0.1 27 1N5259B 1N5259B 39 3.2 80 800 0.25 0.1 30 1N5260B 1N5260B 43 3.0 93 900 0.25 0.1 33 1N5261B 1N5261B 47 2.7 105 1000 0.25 0.1 36 1N5262B 1N5262B 51 2.5 125 1100 0.25 0.1 39 1N5263B 1N5263B 56 2.2 150 1300 0.25 0.1 43 1N5264B 1N5264B 60 2.1 170 1400 0.25 0.1 46 1N5265B 1N5265B 62 2.0 185 1400 0.25 0.1 47 1N5266B 1N5266B 68 1.8 230 1600 0.25 0.1 52 1N5267B 1N5267B 75 1.7 270 1700 0.25 0.1 56 Note : 5% tolerance of Zener voltage http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8 Rating and characteristic curves (1N5221B THRU 1N5267B) FIG.1-TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE FIG. 2-TYPICAL CHANGE OF WORKING VOLTAGE o UNDER OPERATING CONDITIONS AT T A =25 C 1000 500 VOLTAGE CHANGE (mV) TOTAL POWER DISSIPATION (mW) 600 400 300 200 I Z = 5mA 100 10 100 0 0 0 40 80 120 160 200 0 5 o 15 20 25 ZENER VOLTAGE (V) FIG. 3-TYPICAL CHANGE OF WORKING VOLTAGE VS. JUNCTION TEMPERATURE FIG. 4-TEMPERATURE COEFFICIENT OF VZ VS. Z-VOLTAGE 15 -4 TEMPERATURE COEFFICIENT (10 / K) 1.3 RELATIVE VOLTAGE CHANGE 10 AMIBIENT TEMPERATURE ( C) 1.2 -4 10 x 10 /K -4 8 x 10 /K -4 6 x 10 /K 1.1 -4 4 x 10 /K -4 2 x 10 /K 0 -4 -2 x 10 /K -4 -4 x 10 /K 1.0 0.9 0.8 10 I Z = 5mA 5 0 -5 -60 0 60 120 180 240 0 o JUNCTION TEMPERATURE ( C) 10 20 30 40 50 ZENER VOLTAGE (V) FIG. 5-DIODE CAPACITANCE VS. Z-VOLTAGE DIODE CAPACITANCE (pF) 200 150 100 50 0 0 5 10 15 20 25 ZENER VOLTAGE (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8 Rating and characteristic curves (1N5221B THRU 1N5267B) FIG. 7-Z-CURRENT VS. Z-VOLTAGE 100 50 10 40 ZENER CURRENT (mA) FORWARD CURRENT (mA) FIG. 6-FORWARD CURRENT VS. FORWARD VOLTAGE 1 0.1 P tot = 500mW 30 20 10 0.01 0.001 0 0 0.2 0.4 0.6 0.8 1.0 15 25 30 35 ZENER VOLTAGE (V) FIG. 8-Z-CURRENT VS. Z-VOLTAGE FIG. 9-DIFFERENTIAL Z-RESISTANCE VS. Z-VOLTAGE 1000 DIFFERENTIAL Z-RESISTANCE (ohm) 100 80 P tot = 500mW 60 40 20 0 I Z = 1mA 100 I Z = 5mA 10 I Z = 10mA 1 0 4 8 12 16 20 0 5 ZENER VOLTAGE (V) 10 15 20 25 ZENER VOLTAGE (V) FIG. 10-THERMAL RESPONSE THERMAL RESISTANCE FOR PULSE Cond. (K/W) ZENER CURRENT (mA) 20 FORWARD VOLTAGE (V) 1000 t p / T= 0.5 100 t p / T= 0.2 Single Pulse t p / T= 0.01 10 t p / T= 0.1 t p / T= 0.02 t p / T= 0.05 1 0.1 1 10 100 1000 PULSE LENGTH (mS) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS Zener Diode 1N5221B THRU 1N5267B Pinning information Pin Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 1 2 Taping & bulk specifications for AXIAL devices 52.4mm/ 26.2mm 17mm DIA. 55mm Max. A 17mm DIA. 72mm DIA. 71mm Max. 355mm OFF Center both sids 1.0mm Max OFF Alignment 1.2mm 6.3mm REEL PACKING DEVICE Q'TY 1 COMPONENT CARTON Q'TY 2 APPROX. CASE (PCS / REEL) SPACING SIZE (PCS / CARTON) CROSS "A" in FIG. A (m/m) TYPE DO-35G/52mm 5,000 5 mm 360 * 340 * 370 WEIGHT(kg) 20,000 7.3 AMMO PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS (m/m) (m/m) TYPE WEIGHT(kg) DO-35G/26mm 5,000 250 * 78 *48 420 * 270 * 330 150,000 16.7 DO-35G/52mm 5,000 250 *7 8 *78 420 * 270 * 330 100,000 15.0 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS Zener Diode 1N5221B THRU 1N5267B BULK PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS TYPE (m/m) DO-35G 96 * 80 * 4 2 2,000 WEIGHT(kg) (m/m) 120,000 410 * 335 * 265 17.4 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS Zener Diode 1N5221B THRU 1N5267B High reliability test capabilities Item Test Conditions Reference o 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 oC for 5 sec. MIL-STD-202F METHOD-208 3. Pull Test 1kg in axial lead direction for 10 sec. MIL-STD-750D METHOD-2036 4. Bend Lead 0.5kg weight applied to each lead bending arc 90o±5 o for 3 times. MIL-STD-750D METHOD-2036 5. High Temperature Reverse Bias V R=V Z rate at T J=150 oC for 168 hrs. MIL-STD-750D METHOD-1026 6. Forward Operation Life Rated zener current at T=25oC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25OC, IF = 100mA On state: power on for 5 min. off state: power off for 5 min, on and off for 500 cycles. MIL-STD-750D METHOD-1036 7. Intermittent Operation Life 8. Pressure Cooker 9. Temperature Cycling 10. Thermal Shock 11. Forward Surge 12. Humidity 13. High Temperature Storage Life 14. Solvent Resistance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 15P SIG at TA=121 oC for 4 hrs. MIL-STD-750D METHOD-1051 -55 oC to +125oC dwelled for 30 min. and transferred for 5min. total 10 cycles. MIL-STD-750D METHOD-1056 0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles. MIL-STD-750D METHOD-4066-2 8.3ms single half sine-wave superimposed on rated load, one surge. at TA=65 oC, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 at 175oC for 1000 hrs. MIL-STD-750D METHOD-1031 Dip into Freon at 25oC for 1 min. MIL-STD-202F METHOD-215 Page 8 Document ID Issued Date DS-222712 2008/02/10 Revised Date - Revision Page. A 8