TSM9434 Taiwan Semiconductor P-Channel Power MOSFET -20V, -6.4A, 40mΩ KEY PERFORMANCE PARAMETERS Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On- PARAMETER VALUE UNIT VDS -20 V resistance RDS(on) (max) VGS = -10V 40 VGS = -4.5V 60 mΩ Qg 19 nC Application ● Load Switch ● PA Switch SOP-8 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current Pulsed Drain Current -6.4 TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TA = 25°C -3.8 A IDM -19.2 A PDTOT 2.5 W Single Pulsed Avalanche Energy (Note 3) EAS 13.94 mJ Single Pulsed Avalanche Current (Note 3) IAS 16.7 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 30 °C/W Junction to Ambient Thermal Resistance RӨJA 50 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000154 1 Version: C15 TSM9434 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.4 -- -1.0 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V IDSS -- -- -1 µA On-State Drain Current VDS ≤ -5V , VGS = -4.5V ID(ON) -10 -- -- A -- 31 40 -- 45 60 gfs -- 14 -- Qg -- 12 19 Qgs -- 1.7 -- Qgd -- 3.3 -- Ciss -- 1020 -- Coss -- 191 -- Crss -- 140 -- Rg -- 3 -- td(on) -- 25 40 tr -- 43 65 td(off) -- 71 110 tf -- 48 75 VSD -- -0.9 -1.2 V Drain-Source On-State Resistance Forward Transconductance Dynamic VGS = -4.5V, ID = -6.4A VGS = -2.5V, ID = -5.1A VDS = -9V, ID = -6.4A RDS(ON) mΩ S (Note 5) Total Gate Charge VDS = -10V, ID = -6.4A, Gate-Source Charge VGS = -4.5V Gate-Drain Charge Input Capacitance VDS = -10V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz F = 1MHz, open drain nC pF Ω (Note 6) Turn-On Delay Time VDD = -10V, Turn-On Rise Time RGEN = 6Ω, Turn-Off Delay Time ID = -1A, VGS = -4.5V, Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS = -2.5A, VGS = 0V Reverse Recovery Time IS = -4A trr -- 12.6 -- ns Reverse Recovery Charge dIF/dt = 100A/µs Qrr -- 2.84 -- nC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = 16.7A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o Document Number: DS_P0000154 2 Version: C15 TSM9434 Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM9434CS RLG PACKAGE PACKING SOP-8 2,500pcs / 13” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000154 3 Version: C15 TSM9434 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000154 4 Version: C15 TSM9434 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000154 5 Version: C15 TSM9434 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOP-8 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000154 6 Version: C15 TSM9434 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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