TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130mΩ KEY PERFORMANCE PARAMETERS Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On- PARAMETER VALUE UNIT VDS -20 V resistance RDS(on) (max) Application VGS = -4.5V 130 VGS = -2.5V 190 mΩ Qg ● Telecom power ● Consumer Electronics 7.2 nC SOT-23 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25°C ID TC = 100°C (Note 2) Continuous Source Current (Diode Conduction) Total Power Dissipation (Note 3) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range -2.8 -1.6 A IDM -10 A IS -1 A PDTOT 0.7 0.45 W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT RӨJA 175 °C/W THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance (PCB mounted) Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000043 1 Version: C15 TSM2301A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TC = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(th) -0.6 -0.7 -1 V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V IDSS -- -- 1.0 µA -- 90 130 -- 120 190 Rg -- 7.5 -- Qg -- 7.2 -- Qgs -- 2.2 -- Qgd -- 1.2 -- Ciss -- 480 -- Coss -- 460 -- Crss -- 10 -- td(on) -- 38 -- tr -- 25 -- td(off) -- 43 -- tf -- 5 -- VSD -- -0.7 -1.3 Drain-Source On-State Resistance Dynamic VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A RDS(on) mΩ (Note 5) Gate Resistance VGS = VDS =0V, f=1MHz Total Gate Charge VDS = -6V, ID = -2.8A, Gate-Source Charge VGS = -4.5V Gate-Drain Charge Input Capacitance VDS = -15V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching f = 1.0MHz Ω nC pF (Note 6) Turn-On Delay Time VDD = -6V, RL = 6Ω, Turn-On Rise Time VGEN = -4.5V, Turn-Off Delay Time RG = 6Ω Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS = -1A, VGS = 0V V Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. Surface Mounted on a 1 in pad of 2OZ Cu, t ≤ 10 sec. 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2 Document Number: DS_P0000043 2 Version: C15 TSM2301A Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM2301ACX RFG PACKAGE SOT-23 PACKING 3,000 pcs / 7” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000043 3 Version: C15 TSM2301A Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000043 4 Version: C15 TSM2301A Taiwan Semiconductor Electrical Characteristics Curve o (Tc= 25 C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Response (RθJA) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Document Number: DS_P0000043 5 Version: C15 TSM2301A Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) Marking Diagram Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000043 6 Version: C15 TSM2301A Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000043 7 Version: C15