TSM3442 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance N-Channel 2.5V (G-S) MOSFET Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Ordering Information Part No. TSM3442CX6 Packing Tape & Reel Package SOT-26 3000pcs / Per Reel Absolute Maximum Rating (Ta = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID 3.6 A Pulsed Drain Current IDM 10 A PD 1.5 W Maximum Power Dissipation Ta = 25 oC Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range 1.0 TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit TL 5 Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM3442 1-1 Rθja 100 2003/12 rev. A Unit S o C/W Electrical Characteristics Rate ID = 2.4A, (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- Drain-Source On-State VGS = 4.5V, ID = 3.6A RDS(ON) -- 45 60 mΩ Resistance Drain-Source On-State VGS = 2.5V, ID = 3.1A RDS(ON) -- 70 90 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.45 -- -- V Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 8V, VDS = 0V IGSS -- -- ± 100 nA On-State Drain Current VDS ≧ 5V, VGS = 4.5V ID(ON) 6 -- -- A Forward Transconductance VDS = 5V, ID = 3.6A gfs -- 10 -- S Total Gate Charge VDS = 10V, ID = 3.6A, Qg -- 5.0 10 Gate-Source Charge VGS = 4.5V Qgs -- 0.65 -- Qgd -- 1.5 -- Resistance Dynamic Gate-Drain Charge Turn-On Delay Time VDD = 10V, RL = 10Ω, td(on) -- 7 15 Turn-On Rise Time ID = 1A, VGEN = 4.5V, tr -- 55 80 Turn-Off Delay Time RG = 6Ω td(off) -- 16 60 tf -- 10 25 Turn-Off Fall Time nC nS Input Capacitance VDS = 10V, VGS = 0V, Ciss -- 450 -- Output Capacitance f = 1.0MHz Coss -- 70 -- Crss -- 43 -- IS -- -- 1.6 A VSD -- 0.75 1.2 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM3442 2-2 2003/12 rev. A SOT-26 Mechanical Drawing DIM A B C D E F H L TSM3442 3-3 SOT-26 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.70 3.00 0.106 0.118 0.25 0.50 0.010 0.020 1.90(typ) 0.075(typ) 0.95(typ) 0.037(typ) 1.50 1.70 0.059 0.067 1.05 1.35 0.041 0.053 2.60 3.00 0.102 0.118 0.60(typ) 0.024(typ) 2003/12 rev. A