TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 500 ID (A) 0.3 @ VGS =10V 18 General Description de d The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Block Diagram Low RDS(ON) 0.3Ω (Max.) ● Low gate charge typical @ 54nC (Typ.) ● Improve dv/dt capability Ordering Information Part No. Package TO-220 TSM20N50CI C0 ITO-220 Packing 50pcs / Tube 50pcs / Tube e co TSM20N50CZ C0 mm ● en Features N-Channel MOSFET tR Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current(TC=25℃) ID 18 A Pulsed Drain Current * IDM 72 A dv/dt 4.5 V/ns Single Pulse Avalanche Energy (Note 2) EAS 640 mJ Avalanche Current (Repetitive) (Note 1) IAR 18 A Repetitive Avalanche Energy (Note 1) EAR 29 mJ TJ 150 No Parameter Peak Diode Recovery dv/dt (Note 3) Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature TSTG 1/10 -55 to +150 ºC o C Version: D13 TSM20N50 500V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol TO-220 ITO-220 RӨJC 0.43 2.6 Unit o C/W RӨJA 62.5 Electrical Specifications (Tc = 25oC unless otherwise noted) Conditions Symbol Static Drain-Source On-State Resistance VGS = 10V, ID = 9.0A Gate Threshold Voltage VDS = VGS, ID = 250uA Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V Gate Body Leakage VGS = ±30V, VDS = 0V Forward Transconductance VDS = 30V, ID = 9.0A Diode Forward Voltage IS = 18A, VGS = 0V b Total Gate Charge VDS = 400V, ID = 18A, Gate-Source Charge VGS = 10V Input Capacitance Output Capacitance e co Gate-Drain Charge Reverse Transfer Capacitance f = 1.0MHz tR Switching c VDS = 25V, VGS = 0V, Turn-On Delay Time VDD = 250V, ID = 18A, Turn-Off Delay Time RG = 25Ω No Turn-On Rise Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 18A, -- -- V RDS(ON) -- 0.25 0.3 Ω VGS(TH) 2.0 -- 4.0 V IDSS -- -- 1 uA IGSS -- -- ±100 nA gfs -- 11 -- S VSD -- -- 1.5 V Qg -- 54 -- Qgs -- 15 -- Qgd -- 12.5 -- Ciss -- 3094 -- Coss -- 296 -- Crss -- 9.2 -- td(on) -- 78 -- tr -- 72 -- td(off) -- 184 -- tf -- 68 -- tfr -- 426 -- nS -- uC dIF/dt = 100A/us Reverse Recovery Charge Qfr -6 Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Max Rating EAS Test Condition: VDD = 50V, IAS=16A, L=5mH, RG=25Ω, Starting TJ=25℃ 3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=16A, L=1mH, RG=25Ω, Starting TJ=25℃ 4. ISD ≤18A, di/dt ≤ 200A/uS, VDD ≤ BVDS, Starting TJ=25℃ 5. Pulse test: pulse width ≤300uS, duty cycle ≤2% 6. b For design reference only, not subject to production testing. 7. c Switching time is essentially independent of operating temperature. 2/10 Unit 500 mm Dynamic BVDSS Max de VGS = 0V, ID = 250uA Typ en Drain-Source Breakdown Voltage Min d Parameter nC pF nS Version: D13 TSM20N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Transfer Characteristics Gate Charge tR e co mm On-Resistance vs. Drain Current en de d Output Characteristics Source-Drain Diode Forward Voltage No On-Resistance vs. Junction Temperature 3/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage tR e co mm Maximum Safe Operating Area en de d Drain Current vs. Case Temperature No Maximum Safe Operating Area (ITO-220) 4/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) en de d Normalized Thermal Transient Impedance, Junction-to-Ambient No tR e co mm Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220) 5/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET tR e co mm Resistive Switching Test Circuit & Waveform en de d Gate Charge Test Circuit & Waveform No EAS Test Circuit & Waveform 6/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET No tR e co mm en de d Diode Reverse Recovery Time Test Circuit & Waveform 7/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Unit: Millimeters No tR e co mm en de d TO-220 Mechanical Drawing 8/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Unit: Millimeters No tR e co mm en de d ITO-220 Mechanical Drawing 9/10 Version: D13 TSM20N50 No tR e co mm en de d 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: D13