I2N65 Series

RoHS
I2N65 Series RoHS
SEMICONDUCTOR
Nell High Power Products
N-Channel Power MOSFET
12A, 650Volts
DESCRIPTION
D
The Nell 12N65 is a three-terminal silicon device
with current conduction capability of 12A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 650V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
PWM motor controls, bridge circuits and general
purpose switching applications.
To minimize on-state resistance, provide superior
switching performance and commutation mode.
G
D
GD
S
S
TO-220F
(12N65AF)
TO-220AB
(12N65A)
D (Drain)
FEATURES
G
(Gate)
RDS(ON) = 0.85Ω @ VGS = 10V
Ultra low gate charge(54nC max.)
Low reverse transfer capacitance
(C RSS = 25pF typical)
S (Source)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
12
VDSS (V)
650
RDS(ON) (Ω)
0.85 @ V GS = 10V
QG(nC) max.
54
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VDSS
Drain to Source voltage
T J =25°C to 150°C
V DGR
Drain to Gate voltage
R GS =20KΩ
V GS
ID
Continuous Drain Current
T C =25°C
12
T C =100°C
7.4
A
I AR
Avalanche current(Note 1)
E AR
Repetitive avalanche energy(Note 1)
l AR =12A, R GS =50Ω, V GS =10V
E AS
Single pulse avalanche energy(Note 2)
l AS =12A, L =10mH
48
12
Peak diode recovery dv/dt(Note 3)
24
mJ
790
4.5
TO-220AB
Total power dissipation
TJ
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
T C =25°C
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
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W
TO-220F
1.6mm from case
51
Page 1 of 7
ºC
300
10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . l AS =12A, L=10mH, V DD =50V, R GS =25Ω, starting T J =25°C.
3 . I SD ≤ 12A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C.
V /ns
225
PD
TL
V
±30
Pulsed Drain current(Note 1)
T STG
UNIT
650
650
Gate to Source voltage
I DM
dv/dt
VALUE
lbf . in (N . m)
RoHS
I2N65 Series RoHS
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
PARAMETER
Min.
Typ.
0.56
TO-220AB
Thermal resistance, junction to case
ºC/W
TO-220F
Rth(j-a)
UNIT
Max.
2.4
TO-220AB
62.5
TO-220F
62.5
Thermal resistance, junction to ambient
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
Min.
Typ.
Max.
UNIT
OFF CHARACTERISTICS
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
Drain to source breakdown voltage
I D = 250µA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 250 µ A, V DS =V GS
Drain to source leakage current
650
V
V/ºC
0.7
V DS =650V, V GS =0V
T C = 25°C
10
V DS =520V, V GS =0V
T C =125°C
100
μA
Gate to source forward leakage current
V GS = 30V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -30V, V DS = 0V
-100
I GSS
nA
ON CHARACTERISTICS
R DS(ON)
Static drain to source on-state resistance
V GS = 10V, l D = 6A
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
0.65
2
0.85
Ω
4
V
DYNAMIC CHARACTERISTICS
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
RG
Gate resistance
V DS = 25V, V GS = 0V, f =1MHz
V DS = 0V, V GS = 0V, f =1MHz
1480
1900
200
270
25
35
0.2
1.2
pF
Ω
SWITCHING CHARACTERISTICS
t d(ON)
tr
t d(OFF)
tf
QG
Turn-on delay time
Rise time
Turn-off delay time
V DD = 325V, V GS = 10V
I D = 12A, R GS = 25Ω (Note1,2)
Fall time
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
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V DD = 520V, V GS = 10V
I D = 12A, (Note1,2)
30
70
115
240
95
200
85
180
42
54
8.6
21
Page 2 of 7
ns
nC
RoHS
I2N65 Series RoHS
SEMICONDUCTOR
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VSD
I S (I SD )
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 12A, V GS = 0V
1.4
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
12
D (Drain)
A
I SM
Pulsed source current
G
(Gate)
48
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 12A, V GS = 0V,
dI F /dt = 100A/µs
380
ns
3.5
μC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% .
2. Essentially independent of operating temperature.
ORDERING INFORMATION SCHEME
12 N 65
A
Current rating, ID
12 = 12A
MOSFET series
N = N-Channel
Voltage rating, VDS
65 = 650V
Package type
A = TO-220AB
AF = TO-220F
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T)
Body Diode Recovery dv/dt
V DD
Body Diode
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Forward Voltage Drop
RoHS
I2N65 Series RoHS
SEMICONDUCTOR
Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
t d(OFF)
tR
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
V GS
Same Type as
D.U.T.
50kΩ
12V
0.2µF
QG
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
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RoHS
I2N65 Series RoHS
SEMICONDUCTOR
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
Fig.2 Transfer characteristics
10 1
V GS
15V
10V
8V
7V
6.5V
6V
Bottom: 5.5V
Drain-Current, l D (A)
Drain Current,l D (A)
Top:
10 0
Notes:
1. 250µs pulse test
2. T C = 25°C
10 - 1 1
10 -
10 0
10 1
150°C
25 °C
-55°C
10 0
Notes:
1. V DS =50V
2. 250µs pulse width
10 - 1
10 1
Drain Source voltage, V DS (V)
10
Fig.4 Body diode forward voltage variation vs
Source current and Temperature
1.8
Reverse drain current, l DR (A)
Drain-Source On-Resistance, R DS(ON) (Ω)
8
Gate-Source voltage, V GS (V)
Fig.3 On-Resistance variation vs.
Drain current and Gate voltage
1.6
1.4
V GS = 10V
1.2
V GS = 20V
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
10 1
150°C
10 0
25 °C
Notes:
1. V GS =0V
2. 250µs pulse Test
10 - 1
0.2
35
0.4
0.6
0.8
1.0
1.2
1.4
Drain current, l D (A)
Source-Drain voltage, V SD (V)
Fig.5 Capacitance characteristics
Fig.6 Gate charge characteristics
1.6
12
C iss = C gs +C gd ( C ds = shorted )
C oss = C ds +C gs
C rss = C gd
2400
1800
C iss
C oss
1200
Notes:
1. V GS =0V
2. f=1MHz
C rss
600
0
10 -1
10 0
Gate-Source voltage, V GS (V)
3000
Capacitance (pF)
6
4
2
V DS =300V
8
V DS =520V
6
4
2
Notes:
1. l D =1 2A
0
10 1
0
Drain-Source Voltage, V DS (V)
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V DS =120V
10
5
10
15
20
25
30
35
Total gate charge ,Q G (nC)
Page 5 of 7
40
45
RoHS
I2N65 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.7 Maximum safe operating area
Operation in This Area is Limited by R DS(ON)
Drain current, l D (A)
10 2
100µs
10 1
1ms
10ms
10 0
100ms
DC
Note:
1. T C = 25°C
2. T J = 150°C
3. Single Pulse
10 -1
10 -2
10 0
10 1
10 2
10 3
Drain-to-Source voltage, V DS (V)
Thermal response, R th(j-c) (t)
Fig.8 Transient thermal response curve
Thermal response, Rth(j-c)
10 0
D = 0.5
0.2
Notes:
1.R th(j-c) (t)=2.4W Max.
2.Duty factor, D=t 1 /t 2
3.T JM -T C =P DM×R th(j-c) (t)
0.1
0.05
10 -1
0.02
0.01
PDM
(Single Pulse)
t1
10 -2
10 -5
t2
10 -4
10 -3
10 -2
10 -1
Rectangular Pulse Duration, t 1 (sec)
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Page 6 of 7
10 -0
10 1
RoHS
I2N65 Series RoHS
SEMICONDUCTOR
Nell High Power Products
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
PIN
D S
G
16.13 (0.635)
15.87 (0.625)
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
2.65 (0.104)
2.45 (0.096)
D (Drain)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
10.6
10.4
TO-220F
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
D
G
S
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
D (Drain)
4.8
4.6
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 7 of 7