TSC TSM20N50CZC0

TSM20N50
500V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
500
0.3 @ VGS =10V
ID (A)
18
General Description
The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
Block Diagram
●
Low RDS(ON) 0.3Ω (Max.)
●
Low gate charge typical @ 54nC (Typ.)
●
Improve dv/dt capability
Ordering Information
Part No.
Package
Packing
TSM20N50CZ C0
TO-220
50pcs / Tube
TSM20N50CI C0
ITO-220
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current(TC=25℃)
ID
18
A
Pulsed Drain Current *
IDM
72
A
dv/dt
4.5
V/ns
Single Pulse Avalanche Energy (Note 2)
EAS
640
mJ
Avalanche Current (Repetitive) (Note 1)
IAR
18
A
Repetitive Avalanche Energy (Note 1)
EAR
29
mJ
TJ
150
Peak Diode Recovery dv/dt (Note 3)
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TSTG
1/10
-55 to +150
ºC
o
C
Version: D13
TSM20N50
500V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
TO-220
ITO-220
RӨJC
0.43
2.6
Unit
o
C/W
RӨJA
62.5
Electrical Specifications (Tc = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
500
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 9.0A
RDS(ON)
--
0.25
0.3
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS = 30V, ID = 9.0A
gfs
--
11
--
S
Diode Forward Voltage
IS = 18A, VGS = 0V
VSD
--
--
1.5
V
Qg
--
54
--
Qgs
--
15
--
Qgd
--
12.5
--
Ciss
--
3094
--
Coss
--
296
--
Crss
--
9.2
--
td(on)
--
78
--
tr
--
72
--
td(off)
--
184
--
tf
--
68
--
tfr
--
426
--
nS
--
uC
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 400V, ID = 18A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
VDD = 250V, ID = 18A,
Turn-Off Delay Time
RG = 25Ω
Turn-Off Fall Time
Reverse Recovery Time
VGS = 0V, IS = 18A,
dIF/dt = 100A/us
Reverse Recovery Charge
Qfr
-6
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Max Rating EAS Test Condition: VDD = 50V, IAS=16A, L=5mH, RG=25Ω, Starting TJ=25℃
3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=16A, L=1mH, RG=25Ω, Starting TJ=25℃
4. ISD ≤18A, di/dt ≤ 200A/uS, VDD ≤ BVDS, Starting TJ=25℃
5. Pulse test: pulse width ≤300uS, duty cycle ≤2%
6. b For design reference only, not subject to production testing.
7. c Switching time is essentially independent of operating temperature.
2/10
nS
Version: D13
TSM20N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/10
Version: D13
TSM20N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Drain Current vs. Case Temperature
BVDSS vs. Junction Temperature
Maximum Safe Operating Area
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
4/10
Version: D13
TSM20N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
5/10
Version: D13
TSM20N50
500V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
6/10
Version: D13
TSM20N50
500V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
7/10
Version: D13
TSM20N50
500V N-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
8/10
Version: D13
TSM20N50
500V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
9/10
Version: D13
TSM20N50
500V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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10/10
Version: D13