TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 500 0.3 @ VGS =10V ID (A) 18 General Description The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features Block Diagram ● Low RDS(ON) 0.3Ω (Max.) ● Low gate charge typical @ 54nC (Typ.) ● Improve dv/dt capability Ordering Information Part No. Package Packing TSM20N50CZ C0 TO-220 50pcs / Tube TSM20N50CI C0 ITO-220 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current(TC=25℃) ID 18 A Pulsed Drain Current * IDM 72 A dv/dt 4.5 V/ns Single Pulse Avalanche Energy (Note 2) EAS 640 mJ Avalanche Current (Repetitive) (Note 1) IAR 18 A Repetitive Avalanche Energy (Note 1) EAR 29 mJ TJ 150 Peak Diode Recovery dv/dt (Note 3) Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature TSTG 1/10 -55 to +150 ºC o C Version: D13 TSM20N50 500V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol TO-220 ITO-220 RӨJC 0.43 2.6 Unit o C/W RӨJA 62.5 Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 9.0A RDS(ON) -- 0.25 0.3 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 30V, ID = 9.0A gfs -- 11 -- S Diode Forward Voltage IS = 18A, VGS = 0V VSD -- -- 1.5 V Qg -- 54 -- Qgs -- 15 -- Qgd -- 12.5 -- Ciss -- 3094 -- Coss -- 296 -- Crss -- 9.2 -- td(on) -- 78 -- tr -- 72 -- td(off) -- 184 -- tf -- 68 -- tfr -- 426 -- nS -- uC Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 400V, ID = 18A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VDD = 250V, ID = 18A, Turn-Off Delay Time RG = 25Ω Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 18A, dIF/dt = 100A/us Reverse Recovery Charge Qfr -6 Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Max Rating EAS Test Condition: VDD = 50V, IAS=16A, L=5mH, RG=25Ω, Starting TJ=25℃ 3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=16A, L=1mH, RG=25Ω, Starting TJ=25℃ 4. ISD ≤18A, di/dt ≤ 200A/uS, VDD ≤ BVDS, Starting TJ=25℃ 5. Pulse test: pulse width ≤300uS, duty cycle ≤2% 6. b For design reference only, not subject to production testing. 7. c Switching time is essentially independent of operating temperature. 2/10 nS Version: D13 TSM20N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) 4/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220) 5/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 6/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 7/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters 8/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters 9/10 Version: D13 TSM20N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: D13