UNISONIC TECHNOLOGIES CO., LTD Preliminary UT120N03 Power MOSFET 120A, 30V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UT120N03 is a N-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UT120N03 is generally applied in DC to DC convertors or synchronous rectifications. TO-220 FEATURES * ID = 120A * VDS=30V * RDS(ON)=3.8mΩ @ VGS=10V * Low Gate Charge (Typical 54nC) * Fast Switching * 100% Avalanche Tested * High Power and Current Handling Capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT120N03L-TA3-T UT120N03G-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 D 3 S Packing Tube 1 of 6 QW-R502-581.a UT120N03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT VDSS 30 V VGSS ±20 V Continuous ID 120 A Drain Current 480 A Pulsed (Note 2) IDM Single Pulsed Avalanche Energy (Note 3) EAS 240 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns Power Dissipation (TC=25°C) PD 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 0.61mH, IAS = 28A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A. Drain-Source Voltage Gate-Source Voltage THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 1 UNIT °C/W °C/W 2 of 6 QW-R502-581.a UT120N03 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V, TC=25°C 30 V △BVDSS/△TJ Reference to 25°C, ID=250µA IDSS IGSS VGS(TH) RDS(ON) UNISONIC TECHNOLOGIES CO., LTD mV/°C VDS=30V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=VGS, ID=250µA VGS=10V, ID=35A VGS=4.5V, ID=35A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=5V, VDS=15V, ID=35A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=15V, ID=35A, RG=4.7Ω, V Turn-OFF Delay Time tD(OFF) GS=5V (Note 1, 2) Fall-Time tF Gate Resistance Rg SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=120A, VGS=0V Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature www.unisonic.com.tw MIN TYP MAX UNIT 1 0.02 100 -0.02 -100 1.0 3.0 3.8 6.4 2990 585 340 54 8.0 10 9 96 47 37 2.0 μA nA nA V mΩ mΩ pF pF pF 72 nC nC nC ns ns ns ns Ω 1.25 120 480 V A A 3 of 6 QW-R502-581.a UT120N03 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-581.a UT120N03 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-581.a UT120N03 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-581.a