TSM061NA03CV Taiwan Semiconductor N-Channel Power MOSFET 30V, 66A, 6.1mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive loss PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 RDS(on) VGS = 10V 6.1 (max) VGS = 4.5V 8.1 mΩ Qg 9.6 nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switch PDFN 33 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25°C Continuous Drain Current Pulsed Drain Current (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation LIMIT UNIT VDS 30 V VGS ±20 V ID TA = 25°C Total Power Dissipation SYMBOL TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 66 15 A IDM 264 A IAS EAS 20.5 63 A mJ PD PD 44.6 8.9 2.3 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.8 °C/W Junction to Ambient Thermal Resistance RӨJA 53 °C/W THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1512 TSM061NA03CV Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.9 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 4.8 6.1 -- 6.7 8.1 gfs -- 51 -- Qg -- 19.3 -- Qg -- 9.6 -- Qgs -- 4 -- Qgd -- 3.7 -- Ciss -- 1136 -- Coss -- 273 -- Crss -- 106 -- Rg 0.3 1 2 td(on) -- 11.6 -- tr -- 5.8 -- td(off) -- 34.4 -- tf -- 7.8 -- VSD -- -- 1.2 V VGS = 0V, VDS = 30V Drain-Source Leakage Current VGS = 0V, VDS = 30V IDSS TJ = 125°C Drain-Source On-State Resistance Forward Transconductance Dynamic VGS = 10V, ID = 15A VGS = 4.5V, ID = 15A VDS = 5V, ID = 15A RDS(on) µA mΩ S (Note 4) VGS = 10V, VDS = 15V, Total Gate Charge ID = 15A Total Gate Charge VGS = 4.5V, VDS = 15V, Gate-Source Charge ID = 15A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 15V Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time VGS = 10V, VDS = 15V, Turn-On Rise Time ID = 7.5A, RG = 10Ω, Turn-Off Delay Time RL = 2Ω Turn-Off Fall Time Source-Drain Diode ns (Note 3) Forward Voltage VGS = 0V, IS = 15A Reverse Recovery Time IS = 15A , trr -- 23 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 16 -- nC Notes: 1. 2. 3. 4. Current limited by package. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 20.5A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. 2 Version: A1512 TSM061NA03CV Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM061NA03CV RGG PDFN33 5,000pcs / 13” Reel 3 Version: A1512 TSM061NA03CV Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 40 VGS=10V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 32 24 16 VGS=3V 8 0 32 24 25℃ 16 8 150℃ 0 1 2 3 4 0 On-Resistance vs. Drain Current 2 3 4 Gate-Source Voltage vs. Gate Charge 10 0.014 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.012 0.01 0.008 VGS=4.5V 0.006 0.004 VGS=10V 0.002 VDS=15V ID=15A 8 6 4 2 0 0 8 16 24 32 40 0 4 8 12 16 20 Qg, Gate Charge (nC) ID, Drain Current (A) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 2 100 IS, Reverse Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 0 1.8 1.6 1.4 1.2 1 VGS=10V ID=15A 0.8 25℃ 10 150℃ -55℃ 1 0.1 0.6 -75 -50 -25 0 25 50 75 0 100 125 150 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1512 TSM061NA03CV Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 1600 C, Capacitance (pF) 1400 CISS 1200 1000 800 600 400 COSS CRSS 200 0 0 5 10 15 20 25 1.2 ID=1mA 1.1 1 0.9 0.8 -75 30 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case 1000 ID, Drain Current (A) RDS(ON) 100 10 SINGLE PULSE RӨJC=2.8°C/W TC=25°C 1 0 1 10 100 VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 0.1 0.01 0.001 0.00001 0.0001 0.001 SINGLE PULSE RӨJC=2.8°C/W 0.01 0.1 t, Square Wave Pulse Duration (sec) 5 Version: A1512 TSM061NA03CV Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN33 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 061NA03 YML Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 6 Version: A1512 TSM061NA03CV Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: A1512