TSM200N03D Taiwan Semiconductor Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Fast switching ● 100% avalanche tested ● Pb-free plating ● RoHS compliant ● Halogen-free package PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) Power Supply ● Motor COntrol 20 VGS = -4.5V 30 mΩ Qg APPLICATION ● VGS = -10V 4.1 nC PDFN33 Dual Dual N-Channel MOSFET Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C 20 13 A IDM 80 A PDTOT 20 W Single Pulsed Avalanche Energy (Note 3) EAS 14 mJ Single Pulsed Avalanche Current (Note 3) IAS 17 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 6.4 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air Document Number:DS_P0000166 1 Version: A15 TSM200N03D Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.5 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 10 -- 17 20 -- 23 30 gfs -- 13 -- Qg -- 4.1 -- Qgs -- 1 -- Qgd -- 2.1 -- Ciss -- 345 -- Coss -- 55 -- Crss -- 32 -- td(on) -- 2.8 -- tr -- 7.2 -- td(off) -- 15.8 -- tf -- 4.6 -- IS -- -- 20 A ISM -- -- 80 A VSD -- -- 1 V Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS = 30V, VGS = 0V VDS = 24V, Tc = 125ºC VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 5V, ID = 6A IDSS RDS(on) µA mΩ S (Note 5) Total Gate Charge VDS = 15V, ID = 8A, Gate-Source Charge VGS = 4.5V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching f = 1.0MHz nC pF (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 15V, ID = 1A, Turn-Off Delay Time RGEN =6Ω Turn-Off Fall Time Source-Drain Diode ns (Note 4) Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode Maximum Pulse Drain-Source in the MOSFET Diode Forward Current Diode-Source Forward Voltage VGS = 0V, IS = 1A Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = 17A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o Document Number:DS_P0000166 2 Version: A15 TSM200N03D Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM200N03DPQ33 RGG PDFN33 5Kpcs / 13”Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number:DS_P0000166 3 Version: A15 TSM200N03D Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Normalized RDS(ON) vs. TJ Normalized On Resistance(m) -ID , Continuous Drain Current (A) Continuous Drain Current vs. T C TJ, Junction Temperature (°C) TC, Case Temperature (°C) Gate Charge -VGS, Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Normalized Vth vs. TJ Qg, Gate Charge (nC) TJ, Junction Temperature (°C) Normalized Transient Impedance Normalized Thermal Response (RΘJC) -ID Continuous Drain Current (A) Maximum Safe Operation Area VDS, Drain to Source Voltage (V) Square Wave PulseDuration (s) Document Number:DS_P0000166 4 Version: A15 TSM200N03D Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN33 Dual SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr ` S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number:DS_P0000166 5 Version: A15 TSM200N03D Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number:DS_P0000166 6 Version: A15