TSM120NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 39A, 11.7mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive loss PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 RDS(on) VGS = 10V 11.7 (max) VGS = 4.5V 14.9 mΩ Qg 4.5 nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switch PDFN 56 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25°C Continuous Drain Current Pulsed Drain Current (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation LIMIT UNIT VDS 30 V VGS ±20 V ID TA = 25°C Total Power Dissipation SYMBOL TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 39 11 A IDM 156 A IAS EAS 15.6 36.5 A mJ PD PD 33 6.6 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 3.8 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1512 TSM120NA03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.9 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 8.3 11.7 -- 11.9 14.9 gfs -- 35 -- Qg -- 9.2 -- Qg -- 4.5 -- Qgs -- 1.9 -- Qgd -- 1.7 -- Ciss -- 562 -- Coss -- 144 -- Crss -- 50 -- Rg 0.5 1.7 3.4 td(on) -- 8.4 -- tr -- 4.3 -- td(off) -- 22.4 -- tf -- 3.1 -- VSD -- -- 1.2 V VGS = 0V, VDS = 30V Drain-Source Leakage Current VGS = 0V, VDS = 30V IDSS TJ = 125°C Drain-Source On-State Resistance Forward Transconductance Dynamic VGS = 10V, ID = 11A VGS = 4.5V, ID = 11A VDS = 5V, ID = 11A RDS(on) µA mΩ S (Note 4) VGS = 10V, VDS = 15V, Total Gate Charge ID = 11A Total Gate Charge VGS = 4.5V, VDS = 15V, Gate-Source Charge ID = 11A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 15V Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 15V, Turn-Off Delay Time ID = 7A, RG = 10Ω, Turn-Off Fall Time Source-Drain Diode ns (Note 3) Forward Voltage VGS = 0V, IS = 11A Reverse Recovery Time IS = 11A , trr -- 14.7 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 7.3 -- nC Notes: 1. 2. 3. 4. Current limited by package. L = 0.3mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 15.6A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. 2 Version: A1512 TSM120NA03CR Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM120NA03CR RLG PACKAGE PACKING PDFN56 2,500pcs / 13” Reel 3 Version: A1512 TSM120NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Transfer Characteristics 30 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics 30 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 24 18 12 6 VGS=3V 0 24 18 12 25℃ 6 150℃ -55℃ 0 0 1 2 3 4 0 1 3 4 Gate-Source Voltage vs. Gate Charge 10 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) On-Resistance vs. Drain Current 0.016 0.014 VGS=4.5V 0.012 0.01 0.008 VGS=10V 0.006 0.004 0.002 VDS=15V ID=11A 8 6 4 2 0 0 6 12 18 24 30 0 2 4 6 8 10 Qg, Gate Charge (nC) ID, Drain Current (A) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 2 100 VGS=10V ID=11A 1.8 IS, Reverse Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.6 1.4 1.2 1 0.8 0.6 10 150℃ 25℃ -55℃ 1 0.1 -75 -50 -25 0 25 50 75 0.2 100 125 150 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1512 TSM120NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage C, Capacitance (pF) 700 600 CISS 500 400 300 200 COSS 100 CRSS 0 0 5 10 15 20 25 30 1.2 ID=1mA 1.1 1 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case 200 100 ID, Drain Current (A) RDS(ON) 10 SINGLE PULSE RӨJC=3.8°C/W TC=25°C 1 0 1 10 100 VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 SINGLE PULSE RӨJC=3.8°C/W 0.1 t, Square Wave Pulse Duration (sec) 5 Version: A1512 TSM120NA03CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 120NA03 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6 Version: A1512 TSM120NA03CR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: A1512