VS-440CNQ030PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 440 A FEATURES Lug terminal anode 1 Lug terminal anode 2 • 150 °C TJ operation • Center tap module • Very low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base common cathode TO-244 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IF(AV) 440 A DESCRIPTION The VS-440CNQ030PbF center tap, high current, Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, welding and reverse battery protection. VR 30 V Package TO-244 Circuit Two diodes common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 440 A 30 V 27 000 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 220 Apk, TJ = 125 °C (per leg) TJ Range 0.41 V -55 to 150 °C VS-440CNQ030PbF UNITS 30 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current (fig. 5) SYMBOL per module TEST CONDITIONS VALUES UNITS 440 IF(AV) 50 % duty cycle at TC = 125 °C, rectangular waveform per leg 220 A 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 27 000 Maximum peak one cycle non-repetitive surge current per leg (fig. 7) IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 20 A, L = 1 mH 198 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 44 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse 3000 Revision: 26-Mar-14 Document Number: 94226 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-440CNQ030PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 220 A Maximum forward voltage drop per leg (fig. 1) VFM (1) 220 A IRM (1) Maximum junction capacitance per leg CT 0.63 0.55 20 VR = Rated VR TJ = 125 °C LS Maximum voltage rate of change dV/dt mA 1120 VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance per leg V 0.41 TJ = 125 °C TJ = 25 °C UNITS 0.51 TJ = 25 °C 440 A 440 A Maximum reverse leakage current per leg (fig. 2) VALUES 14 800 From top of terminal hole to mounting plane Rated VR pF 5 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg SYMBOL MIN. TJ, TStg -55 - - 0.095 - 0.10 - - 68 - g oz. RthJC Thermal resistance, junction to case per module Thermal resistance, case to heatsink RthCS Weight TYP. MAX. UNITS - 150 °C - 0.19 2.4 - 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) Vertical pull - - 80 2" lever pull - - 35 lbf in (N m) lbf in 10 000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) - Mounting torque °C/W TJ = 150 °C 100 TJ = 125 °C 10 TJ = 25 °C TJ = 150 °C 1000 TJ = 125 °C 100 TJ = 100 °C 10 TJ = 75 °C TJ = 50 °C 1 TJ = 25 °C 0.1 0.01 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Revision: 26-Mar-14 Document Number: 94226 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-440CNQ030PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 000 TJ = 25 °C 10 000 1000 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 1 0.1 PDM t1 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 160 150 150 140 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) DC 130 120 Square wave (D = 0.50) 80 % rated VR applied 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 120 RMS limit 90 DC 60 30 See note (2) 100 0 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Revision: 26-Mar-14 Document Number: 94226 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-440CNQ030PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR ORDERING INFORMATION TABLE Device code VS- 44 0 C N Q 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - C = Circuit configuration 5 - N = Not isolated 6 - Q = Schottky rectifier diode 7 - Voltage rating (030 = 30 V) 8 - Lead (Pb)-free 030 PbF 7 8 Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 26-Mar-14 Document Number: 94226 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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