VS-HFA210NJ60CPbF www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 210 A FEATURES Lug terminal anode 1 • Very low Qrr and trr Lug terminal anode 2 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Base common cathode TO-244 BENEFITS • Reduced RFI and EMI • Reduced snubbing DESCRIPTION HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. PRODUCT SUMMARY IF(AV) 210 A VR 600 V IF(DC) at TC 120 A at 100 °C Package TO-244 (TO-244AB) Circuit Two diodes common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 600 V VR TC = 25 °C 235 Continuous forward current IF TC = 100 °C 120 Single pulse forward current IFSM Limited by junction temperature 600 Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ 2.2 TC = 25 °C 463 TC = 100 °C 185 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg A mJ W -55 to +150 °C ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 105 A Maximum forward voltage VFM IF = 210 A See fig. 1 IF = 105 A, TJ = 125 °C MIN. TYP. MAX. 600 - - - 1.38 1.9 - 1.6 2.25 - 1.3 1.56 UNITS V Maximum reverse leakage current IRM TJ = 125 °C, VR = 480 V See fig. 2 - 1.8 6.0 Junction capacitance CT VR = 200 V See fig. 3 - 200 300 pF Series inductance LS From top of terminal hole to mounting plane - 6.0 - nH mA Revision: 26-Mar-14 Document Number: 94062 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA210NJ60CPbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time (fig. 5) trr Peak recovery current (fig. 6) IRRM Reverse recovery charge (fig. 7) Qrr Peak rate of recovery current (fig. 8) dI(rec)M/dt TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 35 - UNITS TJ = 25 °C - 90 140 TJ = 125 °C - 160 240 - 10 18 - 15 30 - 450 1300 TJ = 125 °C - 1200 3600 TJ = 25 °C - 310 - TJ = 125 °C - 240 - SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -55 - 150 °C - - 0.27 - - 0.135 - 0.10 - TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 105 A dIF/dt = 200 A/μs VR = 200 V ns A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range per leg Thermal resistance, junction to case RthJC per module RthCS Typical thermal resistance, case to heatsink Weight °C/W K/W - 68 - g - 2.4 - oz. Mounting torque (1) 30 (3.4) - 40 (4.6) Mounting torque center hole 12 (1.4) - 18 (2.1) Terminal torque 30 (3.4) - 40 (4.6) Vertical pull - - 80 2" lever pull - - 35 N m (lbf in) lbf in 10 000 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Note (1) Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.2 0.7 1.2 1.7 2.2 2.7 3.2 1000 TJ = 125 °C 100 10 TJ = 25 °C 1 0.1 100 200 300 400 500 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) 600 Revision: 26-Mar-14 Document Number: 94062 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA210NJ60CPbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 100 200 A, 125 °C 105 A, 125 °C 40 A, 125 °C IRRM (A) 1000 TJ = 25 °C 10 200 A, 25 °C 105 A, 25 °C 40 A, 25 °C 100 10 10 100 1 100 1000 1000 VR - Reverse Voltage (V) dIF/dt (A/µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Fig. 6 - - Typical Recovery Current vs. dIF/dt (Per Leg) 160 4000 140 3500 120 3000 100 DC Qrr (nC) Maximum Allowable Case Temperature (°C) 1 80 60 2500 40 A, 125 °C 1500 1000 20 500 0 50 100 150 200 105 A, 125 °C 2000 40 0 200 A, 125 °C 200 A, 25 °C 105 A, 25 °C 0 100 250 IF(AV) - DC Forward Current (A) 40 A, 25 °C 1000 dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current (Per Leg) Fig. 7 - - Typical Stored Charge vs. dIF/dt (Per Leg) 240 10 000 200 A, 125 °C 160 dI(rec)M/dt (A/µs) trr (ns) 200 105 A, 125 °C 40 A, 125 °C 120 80 200 A, 25 °C 200 A, 25 °C 105 A, 25 °C 40 A, 25 °C 1000 105 A, 25 °C 200 A, 125 °C 105 A, 125 °C 40 A, 125 °C 40 A, 25 °C 40 100 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 8 - - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) Revision: 26-Mar-14 Document Number: 94062 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA210NJ60CPbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 0.1 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 1 0.1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 26-Mar-14 Document Number: 94062 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA210NJ60CPbF www.vishay.com Vishay Semiconductors L = 100 µH IL(PK) High-speed switch D.U.T. Freewheel diode Rg = 25 Ω + Current monitor Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms ORDERING INFORMATION TABLE Device code VS- HFA 1 2 210 NJ 60 C PbF 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family, electron irradiated 3 - Average current rating 4 - NJ = TO-244 5 - Voltage rating (60 = 600 V) 6 - C = Common cathode 7 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 26-Mar-14 Document Number: 94062 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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