VS-HFA135NH40PbF www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 275 A FEATURES • Very low Qrr and trr Lug terminal anode • Designed and qualified for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode HALF-PAK (D-67) BENEFITS • Reduced RFI and EMI • Reduced snubbing DESCRIPTION PRODUCT SUMMARY IF (maximum) 275 A VR 400 V IF(DC) at TC 138 A at 100 °C Package HALF-PAK (D-67) Circuit Single diode HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current IF Single pulse forward current Non-repetitive avalanche energy Maximum power dissipation Operating junction and storage temperature range TEST CONDITIONS VALUES UNITS 400 V TC = 25 °C 275 TC = 100 °C 138 IFSM Limited by junction temperature 900 EAS L = 100 μH, duty cycle limited by maximum TJ 1.4 TC = 25 °C 463 TC = 100 °C 185 PD TJ, TStg A mJ W -55 to +150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR Maximum forward voltage VFM IF = 270 A Maximum reverse leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 Junction capacitance CT VR = 200 V Series inductance LS IR = 100 μA IF = 135 A MIN. TYP. MAX. 400 - - UNITS - 1.06 1.65 - 1.2 2.0 - 0.96 1.58 - - 3 See fig. 3 - 280 380 pF From top of terminal hole to mounting plane - 6.0 - nH See fig. 1 IF = 135 A, TJ = 125 °C V mA Revision: 19-Mar-15 Document Number: 94050 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA135NH40PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time See fig. 5 trr Peak recovery current See fig. 6 IRRM Reverse recovery charge See fig. 7 TEST CONDITIONS TYP. MAX. - 77 120 TJ = 125 °C - 280 440 - 7.5 14 - 15 30 - 150 780 TJ = 125 °C - 2800 6300 TJ = 25 °C - 350 - TJ = 125 °C - 300 - TJ = 25 °C IF = 135 A dIF/dt = 200 A/μs VR = 200 V TJ = 125 °C TJ = 25 °C Qrr Peak rate of recovery current See fig. 8 MIN. TJ = 25 °C dI(rec)M/dt UNITS ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -55 to +150 °C Maximum junction and storage temperature range T J, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.27 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased 0.05 °C/W Approximate weight Mounting torque Terminal torque g oz. minimum 3 (26.5) maximum 4 (35.4) minimum 3.4 (30) maximum N·m (lbf · in) 5 (44.2) Case style HALF-PAK module 10 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Istantaneous Forward Current (A) 30 1.06 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.2 0.7 1.2 1.7 2.2 2.7 3.2 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 100 200 300 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage Revision: 19-Mar-15 Document Number: 94050 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA135NH40PbF www.vishay.com Vishay Semiconductors 70 50 TJ = 25 °C 1000 30 10 1 10 100 0 100 1000 1000 VR - Reverse Voltage (V) dIF/dt (A/µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Typical Recovery Current vs. dIF/dt 160 6000 140 5000 TJ = 125 °C TJ = 25 °C 120 4000 100 Qrr (nC) Maximum Allowable Case Temperature (°C) IF = 200 A IF = 135 A IF = 50 A 40 20 100 DC 80 60 IF = 200 A IF = 135 A IF = 50 A 3000 2000 40 1000 20 0 0 50 100 150 200 250 300 0 100 350 1000 IF(AV) - DC Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current Fig. 7 - Typical Stored Charge vs. dIF/dt 450 10 000 TJ = 125 °C TJ = 25 °C IF = 200 A IF = 135 A IF = 50 A 350 300 250 200 150 dI(rec)M/dt (A/µs) 400 trr (ns) TJ = 125 °C TJ = 25 °C 60 IRRM (A) CT - Junction Capacitance (pF) 10 000 200 A 135 A 50 A 1000 100 TJ = 125 °C TJ = 25 °C 50 0 100 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 19-Mar-15 Document Number: 94050 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA135NH40PbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 0.1 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 1 0.1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 19-Mar-15 Document Number: 94050 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA135NH40PbF www.vishay.com Vishay Semiconductors L = 100 µH IL(PK) High-speed switch D.U.T. Freewheel diode Rg = 25 Ω + Current monitor Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms ORDERING INFORMATION TABLE Device code VS- HFA 135 N H 40 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Average current rating 4 - N = Not isolated 5 - H = HALF-PAK 6 - Voltage rating (400 V) 7 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 19-Mar-15 Document Number: 94050 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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