Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 Unit: mm 0.15 1.0 14.5±0.5 +0.1 (Ta=25˚C) 0.45–0.05 2.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2.5±0.5 1 2 3 2.5±0.1 ■ Absolute Maximum Ratings 0.65 max. 0.85 ● Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. +0.1 ● 0.45–0.05 ● 0.8 ■ Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –25V, IE = 0 –100 nA ICEO VCE = –20V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –25 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –2V, IC = –0.5A*2 90 hFE2 VCE = –2V, IC = –1A*2 25 VCE(sat) IC = –500mA, IB = –50mA*2 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 150 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 15 Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage V 350 – 0.4 –1.2 FE1 V MHz 25 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 180 ~ 350 1 Transistor 2SB1378 PC — Ta IC — VCE 700 –1.0 –9mA –8mA –7mA 600 – 0.8 500 –6mA –5mA – 0.6 400 300 –4mA –3mA – 0.4 200 –2mA 100 –30 –10 –3 –1 Ta=75˚C 25˚C – 0.3 –25˚C – 0.03 0 40 60 80 100 120 140 160 0 –1 –10 –3 Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) Cob — VCB IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –30 –100 Collector to base voltage VCB (V) –3 –10 320 VCB=–10V Ta=25˚C 500 400 300 –1 Collector current IC (A) fT — I E Ta=75˚C 25˚C 200 –25˚C 100 280 240 200 160 120 80 40 0 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) 80 0 –1 –6 VCE=–2V Forward current transfer ratio hFE –30 70 –5 600 IC/IB=10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –4 hFE — IC –100 –1 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC 25˚C –2 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 – 0.1 –1mA – 0.2 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IB=–10mA 0 2 VCE(sat) — IC –100 –1.2 Collector current IC (mA) Collector power dissipation PC (mW) 800 –10 1 3 10 30 100 300 Emitter current IE (mA) 1000