Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.8 0.2 ● (1.45) 1.0 1.0 ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 +0.1 0.45–0.05 * 2.5±0.5 Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A Collector current IC 0.7 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 Parameter 1 +0.1 (Ta=25˚C) 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 or more, and the board 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics Parameter Collector cutoff current (Ta=25˚C) Symbol Conditions min typ max Unit ICBO VCB = 15V, IE = 0 1 µA ICEO VCE = 15V, IB = 0 10 µA Collector to base voltage VCBO IC = 10µA, IE = 0 20 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE VCE = 10V, IC = 150mA* Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA* Transition frequency fT VCB = 20V, IE = –20mA, f = 200MHz 55 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 10 15 V 1000 2500 0.15 0.4 V MHz 15 *2 pF Pulse measurement 1 2SD2259 Transistor PC — Ta IC — VCE 0.8 0.6 0.4 0.2 2.0 160 IB=100µA 90µA 80µA 120 70µA 60µA 80 50µA 40µA 30µA 40 1.6 25˚C Ta=75˚C –25˚C 1.2 0.8 0.4 20µA 10µA 0 40 80 120 160 200 0 0 Ambient temperature Ta (˚C) 2 4 10 12 Forward current transfer ratio hFE 1500 1 Ta=75˚C –25˚C 0.03 0.3 1 3 10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 20 16 12 8 4 0 1 3 25˚C –25˚C 10 30 500 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 24 100 Collector to base voltage VCB (V) 2.0 VCB=10V Ta=25˚C 1000 25˚C 1.6 300 Ta=75˚C 2000 3 0.1 1.2 VCE=10V 10 0.01 0.01 0.03 0.8 fT — I E 2500 0.1 0.4 Base to emitter voltage VBE (V) 3000 IC/IB=10 0.3 0 hFE — IC 30 Collector output capacitance Cob (pF) 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 6 Transition frequency fT (MHz) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Collector current IC (A) 1.0 2.4 Ta=25˚C Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 200 Collector current IC (mA) Collector power dissipation PC (W) 1.2 10 250 200 150 100 50 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA)