Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping. 0.8 0.2 ● (1.45) 1.0 1.0 ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 (Ta=25˚C) +0.1 0.45–0.05 * Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –25 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 1 2.5±0.5 2 3 2.5±0.1 Symbol +0.1 2.5±0.5 Parameter 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. or more, and the board 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –10V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 Collector to emitter voltage VCEO IC = –1mA, IB = 0 –25 Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 Forward current transfer ratio hFE*1 VCE = –2V, IC = –2A*2 90 Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = –0.1A*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz typ FE Unit nA –100 nA V V 205 –1 120 V MHz 85 *2 *1h max –100 pF Pulse measurement Rank classification Rank P Q hFE 90 ~ 135 120 ~ 205 1 Transistor 2SB1398 PC — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 Ta=25˚C –5 VCE=–2V –9 –45mA –40mA –35mA –30mA –4 –25mA –20mA –3 –15mA –2 –10mA –8 25˚C –7 Ta=100˚C –25˚C –6 –5 –4 –3 –2 –5mA –1 –1 0 40 60 80 100 120 140 160 0 0 –1 –2 –3 –4 –100 Collector to emitter saturation voltage VCE(sat) (V) VCE=–2V 450 400 350 300 Ta=100˚C 25˚C 150 –25˚C – 0.4 –30 –10 –3 Ta=100˚C 25˚C – 0.3 100 –1.2 –1.6 –2.0 240 IC/IB=30 –1 – 0.8 Base to emitter voltage VBE (V) fT — I E –25˚C – 0.1 VCB=–6V Ta=25˚C 200 160 120 80 40 – 0.03 50 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 200 160 120 80 40 –3 –10 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB 240 0 –1 0 VCE(sat) — IC 500 200 –6 Collector to emitter voltage VCE (V) hFE — IC 250 –5 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Forward current transfer ratio hFE IB=–50mA 0.2 0 Collector output capacitance Cob (pF) –10 Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.4 0 –100 Collector to base voltage VCB (V) 2 IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 1.6 –10 1 3 10 30 100 300 Emitter current IE (mA) 1000