Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.05 2.5±0.1 ±0.05 1.0 1.0 14.5±0.5 +0.1 0.45–0.05 ■ Absolute Maximum Ratings * 0.65 max. (Ta=25˚C) 2.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 1 2.5±0.5 2 3 2.5±0.1 ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. +0.1 ● 0.45–0.05 ● (1.45) 0.8 0.2 ■ Features 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 or more, and the board 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µA Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 0.5A*2 230 600 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 0.3 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz*2 150 Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 150 1 50 *2 *1h FE1 V MHz pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1 2SD2249 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 6 IB=7mA 2.0 0.2 6mA 5mA 4mA 1.2 3mA 0.8 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 3 30 10 3 25˚C Ta=–25˚C 1 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) fT — IE 100 Collector output capacitance Cob (pF) VCB=6V Ta=25˚C 350 300 250 200 150 100 50 IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 –3 Emitter current IE (A) –10 1 3 10 0.8 1.2 1.6 2.0 600 VCE=2V 30 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 400 –1 0.4 Base to emitter voltage VBE (V) IC/IB=30 Collector current IC (A) 0 – 0.01 – 0.03 – 0.1 – 0.3 0 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC/IB=30 0.001 0.01 0.03 2 VBE(sat) — IC 10 0.1 3 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 0 0 Forward current transfer ratio hFE 40 –25˚C 1 1mA 0 20 25˚C Ta=75˚C 5 1.6 0.4 0 Transition frequency fT (MHz) VCE=2V Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 100 Collector to base voltage VCB (V) 10