Distance linear image sensor S11961-01CR Measures the distance to an object by TOF (Time-Of-Flight) method The distance image sensors are designed to measure the distance to an object by TOF method. When used in combination with a pulse modulated light source, this sensor outputs phase difference information on the timing that the light is emitted and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain distance data. Features Applications High-speed charge transfer structure Obstacle detection (self-driving, robots, etc.) Wide dynamic range, low noise by non-destructive readout Security (intrusion detection, etc.) Operates with minimal detection errors even under fluctuating (charge drain function) Shape recognition (logistics, robots, etc.) Motion capture Real-time distance measurement Structure Parameter Image size Pixel pitch Pixel height Number of pixels Number of effective pixels Package Window material Note: This product is not hermetically sealed. Specification 5.12 × 0.05 20 50 272 256 22-pin PWB AR-coated glass Unit mm μm μm pixels pixels - Absolute maximum ratings Parameter Symbol Condition Value Vdd(A) Ta=25 °C -0.3 to +6 Vdd(D) Ta=25 °C -0.3 to +6 Pixel amplifier Vsf Analog input terminal Pixel reset Vr Ta=25 °C -0.3 to Vdd(A) + 0.3 voltage Photosensitive area Vpg Pixel reset pulse p_res Signal sampling pulse phis Digital input terminal Master clock pulse mclk Ta=25 °C -0.3 to Vdd(D) + 0.3 voltage Signal readout trigger pulse trig Output signal synchronous pulse dclk Charge transfer clock pulse voltage VTX1, VTX2, VTX3 Ta=25 °C -0.3 to Vdd(A) + 0.3 Operating temperature Topr No dew condensation*1 -25 to +85 Storage temperature Tstg No dew condensation*1 -40 to +100 Reflow soldering conditions*2 Tsol 260 °C max. 2 times (see P.8) Analog supply voltage Digital supply voltage Unit V V V V V °C °C - *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Distance linear image sensor S11961-01CR Recommended terminal voltage (Ta=25 °C) Parameter Analog supply voltage Digital supply voltage Pixel amplifier Pixel reset Photosensitive area High level Pixel reset pulse voltage Low level High level Signal sampling pulse voltage Low level High level Master clock pulse voltage Low level High level Signal readout trigger pulse voltage Low level Output signal synchronous pulse High level voltage Low level Bias voltage Symbol Vdd(A) Vdd(D) Vsf Vr Vpg p_res phis mclk trig dclk Min. 4.75 4.75 4.5 4 0.8 Vdd(D) × Vdd(D) × Vdd(D) × Vdd(D) × Vdd(D) × - 0.8 0.8 0.8 0.8 0.8 Typ. 5 5 5 4.25 1.0 - Max. 5.25 5.25 Vdd(A) 4.5 1.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Unit V V V V V Typ. f(mclk) 15 Max. 5M 30 Unit Hz Hz mA V V V V V Electrical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V] Parameter Clock pulse frequency Video data rate Current consumption Symbol f(mclk) VR Ic Condition Dark state Min. 1M - Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V, Vsf=5 V, Vr=4.25 V, MCLK=5 MHz] Parameter Symbol Min. Typ. Max. Unit Spectral response range 400 to 1100 nm λ Peak sensitivity wavelength 800 nm λp Photosensitivity*3 S 1.05 × 1012 2.1 × 1012 4.2 × 1012 V/W·s Dark output Vd 0.5 10 V/s Random noise RN 0.4 0.8 mV rms Dark output voltage*4 Vor 2.95 3.3 4.35 V Saturation output voltage Vsat 2 V Sensitivity ratio*5 SR 0.7 1.43 Photoresponse nonuniformity*6 PRNU ±10 % *3: Monochromatic wavelength source (λ=805 nm) *4: Output voltage right after reset in dark state *5: Sensitivity ratio of Vout1 (VTX1=3 V, VTX2=VTX3=0 V) to Vout2 (VTX2=3 V, VTX1=VTX3=0 V) *6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 256 pixels excluding 8 pixels each at both ends, and is defined as follow: PRNU = ∆X/X × 100 [%] X: average output of all pixels, ∆X: difference between X and maximum or minimum output 2 Distance linear image sensor S11961-01CR Spectral response (Typ. Ta=25 °C) 1.0 0.9 Relative sensitivity 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0375EB Block diagram GND GND GND GNDGND 22 21 20 19 18 VTX3 VTX2 VTX1 p_res Vdd(A) 15 2 3 4 5 GND 14 Vr Vsf Vpg 1 17 16 Photodiode array 272 pixels (number of effective pixels: 256 pixels) phis 6 Bias generator 13 Vout1 Sample & hold circuit 12 Vout2 Buffer amplifier mclk 7 trig 8 9 dclk Horizontal shift register 10 11 Vdd(D) GND KMPDC0430EC Basic connection example Buffer amplifier Vout 1 Vout 2 Buffer amplifier KMPDC0486EA 3 Distance linear image sensor S11961-01CR Timing chart mclk t0 p_res t8 thp(p_res) t1 phis t2 t7 thp(phis) t3 trig t6 t4 t5 Output ch 1 2 271 272 Output ch 1 2 271 272 Vout1 Vout2 dclk t9 t10 t11 VTX enable VTX1, 2, 3 VTX enable Light tpi(VTX) VTX1 VTX2 thp(VTX1) thp(VTX2) tlp(VTX1) tlp(VTX2) thp(VTX3) VTX3 tlp(VTX3) KMPDC0431EB KMPDC0431EB tr(mclk) tf(mclk) tr(phis) tf(phis) mclk tf(dclk) phis mclk tr(p_res) tf(p_res) tr(trig) tf(trig) tr(dclk) dclk td(dclk) td(vout) p_res trig Vout1 Vout2 0.1 V tr(vout) tf(vout) mclk p_res t0 KMPDC0432EA 4 Distance linear image sensor S11961-01CR Calculation method of frame rate Frame rate=1/(Time per frame) =1/(Integration time + Readout time) Integration time: It is necessary to be changed by the required distance accuracy and usage environment factors such as fluctuating background light. Readout time= 1 × Number of horizontal pixels Clock pulse frequency =Time per clock (Readout time per pixel) × Number of horizontal pixels Calculation example of readout time (clock pulse frequency: 5 MHz, number of horizontal pixels: 272) Readout time= 1 5 × 106 [Hz] × 272 =200 [ns] × 272 =0.0544 [ms] When operating in non-destructive readout mode: Time per frame=Integration time + (Readout time × Non-destructive readout count) 5 Distance linear image sensor S11961-01CR Parameter Symbol Min. Master clock pulse duty ratio 45 Master clock pulse rise and fall times tr(mclk), tf(mclk) 0 Pixel reset pulse high period thp(p_res) 10 Pixel reset pulse rise and fall times tr(p_res), tf(p_res) 0 Signal sampling pulse high period thp(phic) 1 Signal sampling pulse rise and fall times tr(phic), tf(phic) 0 Signal readout trigger pulse rise and fall times tr(trig), tf(trig) 0 Time from rising edge of master clock pulse to pixel t0 0 reset pulse Time from rising edge of pixel reset pulse to rising t1 1 edge of signal sampling pulse Time from falling edge of signal sampling pulse to t2 1.2 rising edge of signal readout trigger pulse Time from rising edge of master clock pulse to rising 1/4 × 1/f(mclk) t3 edge of signal readout trigger pulse Time from rising edge of signal readout trigger pulse 1/4 × 1/f(mclk) t4 to rising edge of master clock pulse Time from rising edge of master clock pulse to falling 1/4 × 1/f(mclk) t5 edge of signal readout trigger pulse Time from falling edge of signal readout trigger pulse 1/4 × 1/f(mclk) t6 to rising edge of master clock pulse Time from rising edge of master clock pulse (after reading signals from all pixels) to rising edge of t7 1/f(mclk) output signal sampling pulse Time from rising edge of master clock pulse (after reading signals from all pixels) to rising edge of pixel t8 1/f(mclk) reset pulse Time from rising edge of master clock pulse to falling td(dclk) 0 edge of output signal synchronous pulse*7 Output signal synchronous pulse output voltage rise tr(dclk) time (10 to 90%)*7 Output signal synchronous pulse output voltage fall tf(dclk) time (10 to 90%)*7 7 8 tr(Vout), tf(Vout) Settling time of output signal 1, 2 (10 to 90%)* * Time from rising edge of master clock pulse to output td(Vout) signal 1, 2 (output 50%)*7 Charge transfer clock pulse interval tpi(VTX) 60 Charge transfer clock pulse (VTX1) high period thp(VTX1) 30 Typ. 50 - Max. 55 20 20 20 20 Unit % ns μs ns μs ns ns - - ns - - μs - - μs - 1/2 × 1/f(mclk) s - 1/2 × 1/f(mclk) s - 1/2 × 1/f(mclk) s - 1/2 × 1/f(mclk) s - - s - - s 25 50 ns 20 40 ns 20 40 ns 35 70 ns 40 80 ns - ns ns - ns - ns - ns - ns - ns - tpi(VTX) thp(VTX2) thp(VTX3) tpi(VTX) thp(VTX1) thp(VTX3) tpi(VTX) thp(VTX1) thp(VTX2) 3 3 3 0 - ns ns V V 1/f(mclk) - - s 1/f(mclk) - - s 1/f(mclk) - - s Charge transfer clock pulse (VTX1) low period tlp(VTX1) - Charge transfer clock pulse (VTX2) high period thp(VTX2) 30 Charge transfer clock pulse (VTX2) low period tlp(VTX2) - Charge transfer clock pulse (VTX3) high period thp(VTX3) 0 Charge transfer clock pulse (VTX3) low period tlp(VTX3) - Charge transfer clock pulse voltage rise time tr(VTX) Charge transfer clock pulse voltage fall time tf(VTX) High level Charge transfer clock pulse voltage VTX1, VTX2, VTX3 Low level Time from rising edge of signal readout trigger pulse t9 to start VTX operation Time from finish VTX operation to rising edge of t10 output signal synchronous pulse Time from finish VTX operation to rising edge of pixel t11 reset pulse *7: CL=3 pF *8: Output voltage=0.1 V 6 Distance linear image sensor S11961-01CR Input terminal capacitance (Ta=25 °C, Vdd=5 V) Parameter Charge transfer clock pulse internal load capacitance Symbol CLTX Dimensional outline (unit: mm) Min. - Typ. 25 10.1 9.1 P1.27 × 4=5.08 5.3 0.4 P0.8 × 5=4.0 0.4 1.1 4.3 Photosensitive area 5.12 × 0.05 KMPDC0437EB Hole ϕ0.2 Photosensitive surface 1.0 2.0 Unit pF Recommended land pattern (unit: mm) 10.6 5.8 Max. - 10.1 P1.27 × 4=5.08 7 11 P0.8 × 5=4.0 12 1.27 0.8 5.3 6 17 1 22 18 Electrode (22 ×)ȁ 0.4 (22 ×)ġϕ0.2 Tolerance unless otherwise noted: ±0.2, ±2° KMPDA0298EC 7 Distance linear image sensor S11961-01CR Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Symbol Vr VTX3 VTX2 VTX1 p_res phis mclk trig dclk Vdd(D) GND Vout2 Vout1 GND Vdd(A) Vpg Vsf GND GND GND GND GND I/O I I I I I I I I O I I O O I I I I I I I I I Description Bias voltage (pixel reset) Charge transfer clock pulse 3 Charge transfer clock pulse 2 Charge transfer clock pulse 1 Pixel reset pulse Signal sampling pulse Master clock pulse Signal readout trigger pulse Output signal synchronous pulse Digital supply voltage Ground Output signal 1 Output signal 2 Ground Analog supply voltage Bias voltage (photosensitive area) Bias voltage (pixel amplifier) Ground Ground Ground Ground Ground Note: Connect an impedance converting buffer amplifier to Vout1/Vout2 so as to minimize the current flow. Measured example of temperature profile with our hot-air reflow oven for product testing 300 °C 260 °C max. Temperature 230 °C 190 °C 170 °C Preheat Preheat 60 60 to to 120 120 ss Soldering Soldering 40 s max. Time KMPDB0381EA ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 168 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. 8 Distance linear image sensor S11961-01CR Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products ∙ Image sensors Information described in this material is current as of February, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1140E05 Feb. 2016 DN 9