Distance area image sensor S11962-01CR Measures the distance to an object by TOF (Time-Of-Flight) method The distance image sensors are designed to measure the distance to an object by TOF method. When used in combination with a pulse modulated light source, this sensor outputs phase difference information on the timing that the light is emitted and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain distance data. Features Applications High-speed charge transfer structure Obstacle detection (self-driving, robots, etc.) Operates with minimal detection errors even under fluctuating (charge drain function) Security (intrusion detection, etc.) Real-time distance measurement Motion capture Shape recognition (logistics, robots, etc.) Structure Parameter Image size Pixel size Pixel pitch Number of pixels Number of effective pixels Package Window material Note: This product is not hermetically sealed. Specification 2.56 × 2.56 40 × 40 40 72 × 72 64 × 64 48-pin PWB AR-coated glass Unit mm μm μm pixels pixels - Absolute maximum ratings Parameter Symbol Condition Value Vdd(A) Ta=25 °C -0.3 to +6 Vdd(D) Ta=25 °C -0.3 to +6 Pixel amplifier Vsf Pixel reset Vr Analog input terminal Ta=25 °C -0.3 to Vdd(A) + 0.3 voltage Output offset Vref Photosensitive area Vpg Frame reset pulse reset Frame synchronous trigger pulse vst Digital input terminal Ta=25 °C -0.3 to Vdd(D) + 0.3 Line synchronous trigger pulse hst voltage Pixel reset pulse ext_res Master clock pulse mclk VTX1, VTX2, VTX3 Ta=25 °C -0.3 to Vdd(A) + 0.3 Charge transfer clock pulse voltage No dew condensation*1 -25 to +85 Operating temperature Topr Storage temperature Tstg No dew condensation*1 -40 to +100 Reflow soldering conditions*2 Tsol 260 °C max. 2 times (see P.10) Analog supply voltage Digital supply voltage Unit V V V V V °C °C - *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Distance area image sensor S11962-01CR Recommended terminal voltage (Ta=25 °C) Parameter Analog supply voltage Digital supply voltage Bias voltage Frame reset pulse voltage Frame synchronous trigger pulse voltage Line synchronous trigger pulse voltage Master clock pulse voltage Pixel reset pulse voltage Output signal effective period pulse voltage Output signal synchronous pulse voltage Non-readout period pulse voltage Pixel amplifier Pixel reset Output offset Photosensitive area High level Low level High level Low level High level Low level High level Low level High level Low level High level Low level High level Low level High level Low level Symbol Vdd(A) Vdd(D) Vsf Vr Vref Vpg reset vst hst mclk ext_res oe dclk dis_read Min. 4.75 4.75 4.5 3.7 2.3 0.8 Vdd(D) × Vdd(D) × Vdd(D) × Vdd(D) × Vdd(D) × Vdd(D) × Vdd(D) × Vdd(D) × - 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 Typ. 5 5 5 3.9 2.5 1.0 - Max. 5.25 5.25 Vdd(A) 4.1 2.7 1.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Vdd(D) × 0.2 Unit V V V V V V Typ. f(mclk) 10 Max. 10 M 20 Unit Hz Hz mA V V V V V V V V Electrical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V] Parameter Clock pulse frequency Video data rate Current consumption Symbol f(mclk) VR Ic Condition Dark state Min. 1M - Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V, Vsf=5 V, Vr=4.25 V, MCLK=5 MHz] Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 400 to 1100 nm 800 Peak sensitivity wavelength λp nm S 1.15 × 1012 2.3 × 1012 4.6 × 1012 V/W·s Photosensitivity*3 Dark output Vd 0.5 10 V/s Random noise RN 0.8 1.6 mV rms Dark output voltage*4 Vor Vref + 1.0 Vref + 2.1 V Saturation output voltage Vsat Vref - 1.1 Vref + 0.3 V Sensitivity ratio*5 SR 0.7 1.43 Photoresponse nonuniformity*6 PRNU ±10 % *3: Monochromatic wavelength source (λ=805 nm) *4: Output voltage right after reset in dark state *5: Sensitivity ratio of Vout1 (VTX1=3 V, VTX2=VTX3=0 V) to Vout2 (VTX2=3 V, VTX1=VTX3=0 V) *6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by white light which is approx. 50% of the saturation level. PRNU is measured using the pixels excluding the pixels of the 4 outermost lines and defective pixels, and is defined as follows: PRNU= ∆X/X × 100 (%) X: average output of all pixels, ∆X: standard deviation of pixel output 2 Distance area image sensor S11962-01CR Spectral response (Typ. Ta=25 °C) 1.0 0.9 Relative sensitivity 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0375EB Block diagram GND Vdd(A) GND GND Vdd(A) 2 1 45 44 3 VTX1 VTX2 VTX3 43 42 41 GND Vdd(A) 40 39 36 GND 33 Vdd(A) Vertical shift register 32 GND 31 Vpg Photodiode array 72 × 72 pixels (number of effective pixels: 64 × 64 pixels) 30 Vsf 29 Vr 28 Vref ext_res reset vst hst mclk 27 Vout1 6 7 8 10 11 CDS circuit Timing generator Horizontal shift register 26 Vout2 Buffer 25 GND amplifier 23 Vdd(A) 22 GND 9 14 5 oe dclk dis_read 12 GND 15 16 21 20 GND Vdd(D) GND Vdd(D) KMPDC0438EC Basic connection example Buffer amplifier Vout 1 Vout 2 Buffer amplifier KMPDC0486EA 3 Distance area image sensor S11962-01CR Timing chart Using VTX3 allows changing the light source duty ratio to increase the light emission power. When thp(VTX3) is set to 0 ns, the light source can be driven with a duty ratio of 50%. Frame timing t13 (readout time) t14 (integration time) reset t1 t2 t3 t4 vst t5 t6 t7 t8 hst 2 t9 t10 t11t12 1 (1H) N 72 2 (1H) N (1H) 73 1 72 (1H) mclk t16 VTX1, 2, 3 VTX enable VTX enable t17 dis_read t19 t18 ext_res Pulsed light tpi(VTX) VTX1 VTX2 thp(VTX1) thp(VTX2) tlp(VTX1) tlp(VTX2) thp(VTX3) tlp(VTX3) VTX3 VTX enable KMPDC0439EB tr(reset) tf(reset) tr(hst) tf(hst) mclk tr(vst) tf(dclk) hst reset tf(vst) tr(mclk) tf(mclk) tr(dclk) dclk td(dclk) td(vout) vst Vout1 Vout2 mclk 0.1 V tr(vout) tf(vout) mclk hst tr (dis_read) dis_read td(dis_read) tf(dis_read) tr(oe) tf(oe) oe td(oe) td(ext_res) tf(ext_res) ext_res KMPDC0440EA 4 Distance area image sensor S11962-01CR Calculation method of frame rate Frame rate=1/(Time per frame) =1/(Integration time + Readout time) Integration time: It is necessary to be changed by the required distance accuracy and usage environment factors such as fluctuating background light. Readout time= 1 × Horizontal timing clock × Number of vertical pixels Clock pulse frequency =Time per clock (Readout time per pixel) × Horizontal timing clocks × Number of vertical pixels Calculation example of readout time (clock pulse frequency: 5 MHz, horizontal timing clocks: 110, number of vertical pixels: 72) 1 × 110 × 72 Readout time= 5 × 106 [Hz] =200 [ns] × 110 × 72 =1.584 [ms] Horizontal timing Frame timing 1 (1H) 110 (=38 + 72) × mclk t15 38 mclk hst mclk oe dclk 1 2 3 4 72 Vout1 Vout2 KMPDC0441EA 5 Distance area image sensor S11962-01CR Parameter Symbol Master clock pulse duty ratio Master clock pulse rise and fall times tr(mclk), tf(mclk) Frame reset pulse rise and fall times tr(reset), tf(reset) Frame synchronous trigger pulse rise and fall times tr(vst), tf(vst) Line synchronous trigger pulse rise and fall times tr(hst), tf(hst) Pixel reset pulse rise and fall times tr(ext_res), tf(ext_res) Time from falling edge of master clock pulse to rising t1 edge of frame reset pulse Time from rising edge of frame reset pulse to falling t2 edge of master clock pulse Time from falling edge of master clock pulse to falling t3 edge of frame reset pulse Time from falling edge of frame reset pulse to falling t4 edge of master clock pulse Time from falling edge of master clock pulse to rising t5 edge of frame synchronous trigger pulse Time from rising edge of frame synchronous trigger t6 pulse to falling edge of master clock pulse Time from falling edge of master clock pulse to falling t7 edge of frame synchronous trigger pulse Time from falling edge of frame synchronous trigger t8 pulse to falling edge of master clock pulse Time from rising edge of master clock pulse to rising t9 edge of line synchronous trigger pulse Time from rising edge of line synchronous trigger pulse t10 to rising edge of master clock pulse Time from rising edge of master clock pulse to falling t11 edge of line synchronous trigger pulse Time from falling edge of line synchronous trigger t12 pulse to rising edge of master clock pulse Min. 45 0 0 0 0 0 Typ. 50 - Max. 55 20 20 20 20 20 Unit % ns ns ns ns ns 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s 1/4 × 1/f(mclk) - 1/2 × 1/f(mclk) s - - s t14 (110/f(mclk) + t15) × 72 + t18 + t19 - 10 - ms t15 10/f(mclk) - - s td(dclk) 0 25 50 ns tr(dclk) - 20 40 ns tf(dclk) - 20 40 ns td(oe) 0 25 50 ns tr(oe) - 20 40 ns tf(oe) - 20 40 ns tr(Vout), tf(Vout) - 35 70 ns td(Vout) - 40 80 ns Readout time t13 Integration time Time from rising edge of master clock pulse (after reading signals from all pixels) to rising edge of master clock pulse (hst: high period) Time from falling edge of master clock pulse to rising edge of output signal synchronous pulse Output signal synchronous pulse output voltage rise time (10 to 90%)*7 Output signal synchronous pulse output voltage fall time (10 to 90%)*7 Time from rising edge of master clock pulse to rising edge of output signal effective period pulse Output signal effective period pulse rise time (10 to 90%)*7 Output signal effective period pulse fall time (10 to 90%)*7 Settling time of output signal 1, 2 (10 to 90%)*7 *8 Time from rising edge of master clock pulse to output signal 1, 2 (output 50%)*7 *7: CL=3 pF *8: Output voltage=0.1 V 6 Distance area image sensor S11962-01CR Parameter Charge transfer clock pulse interval Charge transfer clock pulse (VTX1) high period Symbol tpi(VTX) thp(VTX1) Min. 60 30 Charge transfer clock pulse (VTX1) low period tlp(VTX1) - Charge transfer clock pulse (VTX2) high period thp(VTX2) 30 Charge transfer clock pulse (VTX2) low period tlp(VTX2) - Charge transfer clock pulse (VTX3) high period thp(VTX3) 0 Charge transfer clock pulse (VTX3) low period tlp(VTX3) - Charge transfer clock pulse voltage rise time tr(VTX) Charge transfer clock pulse voltage fall time tf(VTX) High level Charge transfer clock pulse voltage VTX1, VTX2, VTX3 Low level Time from falling edge of pixel reset pulse to t16 “VTX enable period=on” Time from “VTX enable period=off” to falling edge of t17 frame reset pulse Time from rising edge of line synchronous trigger pulse t18 (last pulse) to rising edge of pixel reset pulse Pixel reset pulse high period t19 Time from rising edge of line synchronous trigger pulse td(dis_read) to rising edge of non-readout period pulse*7 tr(dis_read) Non-readout period pulse rise time (10 to 90%)*7 Non-readout period pulse fall time (10 to 90%)*7 tf(dis_read) Max. - Unit ns ns - ns - ns - ns - ns - ns - Typ. tpi(VTX) thp(VTX2) thp(VTX3) tpi(VTX) thp(VTX1) thp(VTX3) tpi(VTX) thp(VTX1) thp(VTX2) 3 3 3 0 - ns ns 0 - - s 0 - - s 0 - - s 10 - - μs - 25 50 ns - 20 20 40 40 ns ns Min. - Typ. 100 Max. - Unit pF V Input terminal capacitance (Ta=25 °C, Vdd=5 V) Parameter Charge transfer clock pulse internal load capacitance Symbol CLTX 7 Distance area image sensor Dimensional outline (unit: mm) 8.18 Index mark ϕ0.2 S11962-01CR Recommended land pattern (unit: mm) 7.58 Photosensitive area 2.54 7.08 P0.6 × 11=6.6 0.4 0.4 1.2 P0.6 × 5=3.0 8.66 8.16 Hole (3 ×) ϕ0.2 Photosensitive surface 1.0 2.0 KMPDC0442EB 7.58 P0.6 × 11=6.6 24 12 25 0.6 P0.6 × 5=3.0 13 8.66 9.26 0.67 0.18 (44 ×) ϕ0.2 36 1 48 37 Electrode (48 ×)ȁ 0.4 Tolerance unless otherwise noted: ±0.2, ±2° KMPDA0299EC 8 Distance area image sensor S11962-01CR Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Symbol GND Vdd(A) GND NC dis_read ext_res reset vst oe hst mclk GND NC dclk GND Vdd(D) NC NC NC GND Vdd(D) GND Vdd(A) NC GND Vout2 Vout1 Vref Vr Vsf Vpg GND Vdd(A) NC NC GND NC NC Vdd(A) GND VTX3 VTX2 VTX1 Vdd(A) GND NC NC NC I/O I I I O I I I O I I I O I I I I I I I O O I I I I I I I I I I I I I I - Description Ground Analog supply voltage Ground No connection Non-readout period pulse Pixel reset pulse Frame reset pulse Frame synchronous trigger pulse Output signal effective period pulse Line synchronous trigger pulse Master clock pulse Ground No connection Output signal synchronous pulse Ground Digital supply voltage No connection No connection No connection Ground Digital supply voltage Ground Analog supply voltage No connection Ground Output signal 2 Output signal 1 Bias voltage (output offset) Bias voltage (pixel reset) Bias voltage (pixel amplifier) Bias voltage (photosensitive area) Ground Analog supply voltage No connection No connection Ground No connection No connection Analog supply voltage Ground Charge transfer clock pulse 3 Charge transfer clock pulse 2 Charge transfer clock pulse 1 Analog supply voltage Ground No connection No connection No connection Note: Leave the “NC” terminals open and do not connect them to GND. Connect impedance convering buffer amplifiers to Vout1/Vout2 so as to minimize the current flow. 9 Distance area image sensor S11962-01CR Measured example of temperature profile with hot-air reflow oven for product testing 300 °C 260 °C max. Temperature 230 °C 190 °C 170 °C Preheat Preheat 60 60 to to 120 120 ss Soldering Soldering 40 s max. Time KMPDB0381EA ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 168 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Dislaimer ∙ Surface mount type products ∙ Image sensors Information described in this material is current as of June, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1141E04 Jun. 2015 DN 10