MA111 Zener Diodes Composite Elements MAZL068D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 ● Four anode-common element wiring of MA8068 3 1.45±0.1 4 1 2 +0.1 0.16 -0.06 0 to 0.1 0.8 1.1 -0.1 +0.2 +0.1 0.3 -0.05 type package (5-pin) 0.95 ● Mini 1.9±0.1 +0.2 2.9 -0.05 ■ Features 0.95 5 ■ Absolute Maximum Ratings (Ta= 25˚C) Parameter Average forward current Symbol IF(AV) Rating Unit 100 *1 mA *1 mA Instanious forward current IFRM 200 Total power dissipation Ptot*2 200 *1 mW Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to + 150 ˚C 0.1 to 0.3 0.4±0.2 1 : Cathode 1 4 : Anode 1, 2 2 : Cathode 2 Anode 3, 4 3 : Cathode 3 5 : Cathode 4 Mini Type Package (5-pin) ■ Internal Connection *1 Working value in a single piece *2 With a printed-circuit board 5 1 4 3 2 1 ■ Electrical Characteristics (Ta= 25˚C)* Parameter Forward voltage Zener voltage Operating resistance Symbol VF VZ Condition min IF=10mA *2 IZ= 5mA RZK IZ= 0.5mA 6.40 Unit typ max 0.9 1.0 6.80 7.20 V 60 Ω V RZ IZ= 5mA 20 Ω Reverse current IR VR= 4V 0.1 µA Temperature coefficient of zener voltage SZ *3 IZ= 5mA Terminal capacitance Ct VR= 0V, f=1MHz Note 1. Test method : Depend on JIS C7031 testing 2. Rated input/output frequency : 5MHz 3. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application * 3 : Tj= 25 to 150˚C ■ Marking 6.8D 3.0 mV/˚C 40 pF MAZL068D Zener Diodes Composite Elements Ptot – Ta IF – VF 300 IZ – VZ 1000 100 Ta=25˚C With a printed-circuit board 100˚C 25˚C 100 1 Zener current 100 10 IZ (mA) (mA) 150 IF 200 0.1 50 0 50 100 150 Ambient temperature 200 250 0.2 0.8 VF 1.0 1.2 Zener current 10 IZ 30 50 (mA) 100 Ta=25˚C 50 10 5 1 0.5 0.1 0.1 0.5 1 Zener current IZ (mA) 5 10 (nA) 10 Ta=150˚C IR 20 10 1 100˚C 25˚C 0.1 0.01 0 0 1 2 3 Reverse voltage Noise – IZ 100 8 VZ (V) IR – VR Reverse current 10 5 7 Zener voltage (pF) Diode capacitance CD 100 3 6 (V) f=1MHz Ta=25˚C (Ω) RZ Operating resistance 0.6 30 Ta=25˚C 1 0.1 Ct – VR 1000 Noise (nV/ Hz) 0.4 Forward voltage RZ – IZ 1 0.3 0.5 1 0.001 0 (˚C) Ta 150˚C 0.01 0.01 0 Ta=–20˚C 10 –20˚C Ta=150˚C Forward current Power dissipation Ptot (mW) 250 25˚C 100˚C 4 VR 5 (V) 6 0 1 2 3 Reverse voltage 4 VR 5 (V) 6