NEOTEC SEMICONDUCTOR LTD. NT7108 NT7108 Copyright: NEOTEC (C) 2002 http://www.neotec.com.tw All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electric or mechanical, by photocopying, recording, or otherwise, without the prior written consent of NEOTEC 12/18/2002 1/22 NEOTEC SEMICONDUCTOR LTD. NT7108 INTRODUCTION The NT7108 is a LCD driver LSI with 64 channel outputs for dot matrix liquid crystal graphic display systems. This device consists of the display RAM, 64 bits data latch, 64 bit drivers and decoder logic. It has the internal display RAM for storing the display data transferred from a 8 bit micro controller and generates the dot matrix liquid crystal driving signals corresponding to stored data. The NT7108 composed of the liquid crystal display system in combination with the NT7107. FEATURES .Dot matrix LCD segment driver with 64 channel output .Input and output signal -Input: 8bit parallel display data control signal from MPU divided bias voltage (V0R, V0L, V2R, V2L, V3R, V3L, V5R, V5L) -Output: 64 channels for LCD driving. .Display data is stored in display data RAM from MPU. .Interface RAM -Capacity: 512 bytes (4096 bits) -RAM bit data: RAM bit data = 1: On RAM bit data = 0: Off .Applicable LCD duty:1/32-1/64 .LCD driving voltage: 8V-17V(VDD-VEE) .Power supply voltage:+2.7~+5.5V .Interface Driver COMMON Other NT7107 .High voltage CMOS process. .100QFP or bare chip available. 12/18/2002 SEGMENT Other NT7108 Controller MPU 2/22 NEOTEC SEMICONDUCTOR LTD. NT7108 Input Register Output Register 8 8 Display On/Off I/O Buffer DB<0:7> CLK2 CLK1 BLOCK DIAGRAM CS1B CS2B CS3 R/W RS E RSTB Instruction Decoder Busy 1 6 3 Y-Decoder ADC 6 Y-Counter X-Decoder FRM 6 Z-Decoder CL Display Start Line Register 64 64 8 Display Data RAM 512 X 8 = 4096 bits 8 Page Selector 6 64 Data Latch 64 V0L V2L V3L V5L M S2 S1 LCD Driver S64 S63 12/18/2002 V0R V2R V3R V5R 3/22 NEOTEC SEMICONDUCTOR LTD. NT7108 PIN CONFIGURATION 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DB1 DB0 VSS V3L V2L V5L V0L VEE1 S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 S14 S15 S16 S17 S18 S19 S20 S21 S22 S42 S41 S40 S39 S38 S37 S36 S35 S34 S33 S32 S31 S30 S29 S28 S27 S26 S25 S24 S23 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 ADC M VDD V3R V2R V5R V0R VEE2 S64 S63 S62 S61 S60 S59 S58 S57 S56 S55 S54 S53 S52 S51 S50 S49 S48 S47 S46 S45 S44 S43 NT7108 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 FRM E CLK1 CLK2 CL RS R/W RSTB CS1B CS2B CS3 NC NC NC DB7 DB6 DB5 DB4 DB3 DB2 100 QFP 12/18/2002 4/22 NEOTEC SEMICONDUCTOR LTD. NT7108 PIN DESCRIPTION Table 1. Pin Description Pin Number QFP Symbol 3 78 73,8 VDD VSS VEE1,2 74,7 76,5 77,4 75,6 I/O Power V0L,V0R, V2L,V2R, Power V3L,V3R, V5L,V5R 92 91 90 2 CS1B CS2B CS3 M Input 1 ADC Input 100 FRM Input 99 E Input 98 97 CLK1 CLK2 Input 96 CL Input 95 RS Input 94 RW Input 79-86 DB0~ DB7 Input/ Output 12/18/2002 Input Description For internal logic circuit (+2.7~+5.5V) GND (0V) For LCD driver circuit VSS = 0V, VDD = +5V±10%, VDD - VEE = 8V - 17V The same voltage should be connected to VEE1 and VEE2. Bias supply voltage terminals to drive LCD. Select Level Non-Select Level V0L (R), V5L (R) V2L (R), V3L (R) The same voltage should connect V0L and V0R (V2L & V2R, V3L & V3R, V5L & V5R). Chip selection In order to interface data for input or output, the terminals have to be CS1B=L, CS2B=L, and CS3=H. Alternating signal input for LCD driving. Address control signal to determine the relation between Y address of display RAM and terminals from which the data is output. ADC=H Y0:S1-Y63:S64 ADC=L Y0:S64-Y63:S1 Synchronous control signal. Presets the 6-bit Z counter and synchronizes the common signal with the frame signal when the frame signal becomes high. Enable signal. Write mode (R/W=L) data of DB<0:7> is latched at the falling edge of E Read mode (R/W=H) DB<0:7> appears the reading data while E is at high level. 2 phase clock signal for internal operation Used to execute operations for input/output of display RAM data and others. Display synchronous signal. Display data is latched at rising time of the CL signal and increments the Z-address counter at the CL falling time. Data or Instruction. RS=H DB<0:7>:Display RAM data RS=L DB<0:7>:Instruction data Read or Write. R/W=H Data appears at DB<0:7> and can be read by the CPU while E=H, CS1B=L, CS2B-L and CS3=H. R/W=L Display data DB<0:7> can be written at falling of E when CS1B=L, CS2B=L and CS3=H. Data bus. Three state I/O common terminal. 5/22 NEOTEC SEMICONDUCTOR LTD. Pin Number QFP 72-9 Symbol S1-S64 93 RSTB 87 88 89 NC 12/18/2002 I/O NT7108 Description LCD segment driver output. Display RAM data 1:On Display RAM data 0:Off (relation of display RAM data & M) M Data Output Level Output L V2 L H V0 L V3 H H V5 Reset signal. When RSTB=L, -ON/OFF register 0 set (display off) Input -Display start line register 0 set (display line from 0) After releasing reset, this condition can be changed only by instruction. No connection. (Open) 6/22 NEOTEC SEMICONDUCTOR LTD. NT7108 OPERATING PRINCIPLES AND METHODS I/O BUFFER Input buffer controls the status between the enable and disable of chip. Unless the CS1B to CS3 is in active mode, Input or output of data and instruction does not execute. Therefore internal state is not change. But RSTB and ADC can operate regardless CS1B-CS3. INPUT REGISTER Input register is provided to interface with MPU, which is different operating frequency. Input register stores the data temporarily before writing it into display RAM. When CS1B to CS3 are in the active mode, R/W and RS select the input register. The data from MPU is written into input register, then into display RAM. Data latched for falling of the E signal and write automatically into the display data RAM by internal operation. OUTPUT REGISTER Output register stores the data temporarily from display data RAM when CS1B, CS2B and CS3 are in active mode and R/W and RS=H, stored data in display data RAM is latched in output register. When CS1B to CS3 is in active mode and R/W=H, RS=L, status data (busy check) can read out. To read the contents of display data RAM, twice access of read instruction is needed. In first access, data in display data RAM is latched into output register. In second access, MPU can read data which is latched. That is, to read the data in display data RAM, it needs dummy read. But status read is not needed dummy read. RS L H 12/18/2002 R/W L H L H Function Instruction Status read (busy check) Data write (from input register to display data RAM) Data read (from display data RAM to output register) 7/22 NEOTEC SEMICONDUCTOR LTD. NT7108 RESET The system can be initialized by setting RSTB terminal at low level when turning power on, receiving instruction from MPU. When RSTB becomes low, following procedure is occurred. ‧Display off ‧Display start line register become set by 0. (Z-address 0) While RSTB is low, No instruction except status read can be accepted. Therefore, execute other instructions after making sure that DB4=0 (clear RSTB) and DB7=0 (ready) by status read instruction. The Conditions of power supply at initial power up are shown in table 2. Table 2. Power Supply Initial Conditions Item Symbol Min. Typ. Max. Reset time tRS 1.0 Rise time tR 200 VDD 4.5V tRS Unit μs ns tR 0.7VDD 0.3VDD RSTB Busy Flag Busy Flag indicates the NT7108 is operating or no operating. When busy flag is high, NT7108 is in internal operating. When busy flag is low, NT7108 can accept the data or instruction. DB7 indicates busy flag of the NT7108. RS R/W E Address N N+1 Output register DB0-DB7 Busy check Write address N Busy check Read data (dummy) N+2 Data at address N Data at address N+1 Busy Read data Busy Data read address check at address check N N+1 Busy Check E Busy Flag T Busy 1/fCLK ≦ T Busy≦ 3/ fCLK fCLK is CLK1, CLK2 frequency Busy Check 12/18/2002 8/22 NEOTEC SEMICONDUCTOR LTD. NT7108 Display ON / OFF Flip-Flop The display on/off flip-flop makes on/off the liquid crystal display. When flip-flop is reset (logical low), selective voltage or non-selective voltage appears on segment output terminals. When flip-flop is set (logic high), non-selective voltage appears on segment output terminals regardless of display RAM data. The display on/off flip-flop can changes status by instruction. The display data at all segments disappear while RSTB is low. The status of the flip-flop is output to DB5 by status read instruction. The display on/off flip-flop synchronized by CL signal. X Page Register X page register designates pages of the internal display data RAM. Count function is not available. An address is set by instruction. Y Address Counter An Address is set by instruction and is increased by 1 automatically by R/W operations of display data. The Y address counter loops the values of 0 to 63 to count. Display Data RAM Display data RAM stores a display data for liquid crystal display. To indicate on state dot matrix of liquid crystal display, write data 1. The other way, off state, writes 0. Display data RAM address and segment output can be controlled by ADC signal. ‧ADC=H Y-address 0:S1-Y address 63:S64 ‧ADC=L Y-address 0:S64-Y address 63:S1 ADC terminal connects the VDD or Vss. Display Start Line Register The display start line register indicates of display data RAM to display top line of liquid crystal display. Bit data (DB<0.5>) of the display start line set instruction is latched in display start line register. Latched data is transferred to the Z address counter while FRM is high, presetting the Z address counter. It is used for scrolling of the liquid crystal display screen. 12/18/2002 9/22 NEOTEC SEMICONDUCTOR LTD. NT7108 DISPLAY CONTROL INSTRUCTION The display control instructions control the internal state of the NT7108. Instruction is received from MPU to NT7108 for the display control. The following table shows various instructions. Instruction RS R/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 Display on/off L L L L L L L H L L H L L L H H Status read L H Busy L Write display data H L Read display data H H Set address (Y address) Set page (X address) Display Start line (Z address) 12/18/2002 Function Controls the display on or off. Internal status and display RAM H H H H H L/H data is not affected. L:OFF, H:ON Sets the Y address in the Y Y address (0-63) address counter. Sets the X address at the X H H H Page (0-7) address register. Indicates the display data RAM displayed at the top of the Display start line (0-63) screen. Read status. BUSY L: Ready H: In operation On/ Reset L L L L ON/OFF L: Display ON Off H: Display OFF RESET L: Normal H: Reset Writes data (DB0: 7) into display data RAM. After writing Write data instruction, Y address is increased by 1 automatically. Reads data (DB0: 7) from display Read data data RAM to the data bus. 10/22 NEOTEC SEMICONDUCTOR LTD. NT7108 DISPLAY ON/OFF RS 0 R/W 0 DB7 0 DB6 0 DB5 1 DB4 1 DB3 1 DB2 1 DB1 1 DB0 D The display data appears when D is 1 and disappears when D is 0. Though the data is not on the screen with D=0, it remains in the display data RAM. Therefore, you can make it appear by changing D=0 into D=1. SET ADDRESS (Y ADDRESS) RS 0 R/W 0 DB7 0 DB6 1 DB5 AC5 DB4 AC4 DB3 AC3 DB2 AC2 DB1 AC1 DB0 AC0 Y address (AC0-AC5) of the display data RAM is set in the Y address counter. An address is set by instruction and increased by 1 automatically by read or write operations of display data. SET PAGE (X ADDRESS) RS 0 R/W 0 DB7 1 DB6 0 DB5 1 DB4 1 DB3 1 DB2 AC2 DB1 AC1 DB0 AC0 X address (AC0-AC2) of the display data RAM is set in the X address register. Writing or reading to or from MPU is executed in this specified page until the next page is set. DISPLAY START LINE (Z ADDRESS) RS 0 R/W 0 DB7 1 DB6 1 DB5 AC5 DB4 AC4 DB3 AC3 DB2 AC2 DB1 AC1 DB0 AC0 Z address (AC0-AC5) of the display data RAM is set in the display start line register and displayed at the top of the screen. When the display duty cycle is 1/64 or others (1/32-1/64), the data of total line number of LCD screen, from the line specified by display start line instruction, is displayed. 12/18/2002 11/22 NEOTEC SEMICONDUCTOR LTD. NT7108 STATUS READ RS 0 R/W 1 DB7 BUSY DB6 0 DB5 DB4 ON/OFF RESET DB3 0 DB2 0 DB1 0 DB0 0 ‧BUSY When BUSY is 1, the Chip is executing internal operation and no instructions are accepted. When BUSY is 0, the Chip is ready to accept any instructions. ‧ON/OFF When ON/OFF is 1, the display is OFF. When ON/OFF is 0, the display is ON. ‧RESET When RESET is 1, the system is being initialized. In this condition, no instructions except status read can be accepted. When RESET is 0, initializing has finished and the system is in usual operation condition. WRITE DISPLAY DATA RS 1 R/W 0 DB7 D7 DB6 D6 DB5 D5 DB4 D4 DB3 D3 DB2 D2 DB1 D1 DB0 D0 Writes data (D0-D7) into the display data RAM. After writing instruction, Y address is increased by 1automatically. READ DISPLAY DATA RS 1 R/W 1 DB7 D7 DB6 D6 DB5 D5 DB4 D4 DB3 D3 DB2 D2 DB1 D1 DB0 D0 Reads data (D0-D7) from the display data RAM. After reading instruction, Y address is increased by 1 automatically. 12/18/2002 12/22 NEOTEC SEMICONDUCTOR LTD. NT7108 MAXIMUM ABSOLUTE LIMIT Characteristic Operating voltage Supply voltage Driver supply voltage Symbol VDD VEE VB VLCD TOPR TSTG Value -0.3 to +7.0 VDD-19.0 to VDD +0.3 -0.3 to VDD +0.3 VEE-0.3 to VDD +0.3 -30 to +85 -55 to +125 Unit V Note (1) (4) (1),(3) (2) Operating temperature ℃ Storage temperature NOTES: 1. Based on Vss=0V 2. Applies the same supply voltage to VEE1 and VEE2. VLCD=VDD-VEE. 3. Applies to M, FRM, CL, RSTB, ADC, CLK1, CLK2, CS1B, CS2B, CS3, E, R/W, RS and DB0-DB7. 4. Applies to V0L(R), V2L(R), V3L(R) and V5L(R). Voltage level: VDD≧V0L=V0R≧V2L=V2R≧V3L=V3R≧V5L=V5R≧VEE. 12/18/2002 13/22 NEOTEC SEMICONDUCTOR LTD. NT7108 ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS (VDD=5.0V, Vss=0V, VDD-VEE=8 to 17V, Ta=-30℃ to +85℃) Characteristic Symbol Condition Min. Typ. Max. Unit Note 2.7 5.5 Operating Voltage VDD 0.7VDD VDD (1) Input high Voltage VIH1 2.0 VDD (2) VIH2 0 - 0.3VDD V (1) Input low Voltage VIL1 0 0.8 (2) VIL2 Output high voltage VOH IOH=-200μA 2.4 (3) IOL=1.6mA 0.4 (3) Output low voltage VOL VIN=VSS-VDD -1.0 1.0 (4) Input leakage current ILKG V IN =V SS -V DD Three-state(off) input ITSL -5.0 5.0 (5) current VIN=VEE-VDD Driver input leakage IDIL μA (6) -2.0 2.0 current During display 100 (7) Operating current IDD1 During access IDD2 500 (7) Access cycle = 1 MHz VDD-VEE=15V On resistance RON kΩ (8) 7.5 ILOAD= ±0.1mA NOTES: 1. CL, FRM, M RSTB, CLK1, CLK2 2. CS1B, CS2B, CS3, E, R/W, RS, DB0 - DB7 3. DB0 - DB7 4. Except DB0 -DB7 5. DB0 - DB7 at high impedance 6. V0L(R), V2L(R), V3L(R), V5L(R) 7. 1/64 duty, fCLK=250kHz, frame frequency=70HZ, output: no load 8. VDD - VEE =15.5V V0L(R)>V2L(R)=VDD-2/7(VDD-VEE)>V3L(R)=VEE+2/7(VDD-VEE)>V5L(R) 12/18/2002 14/22 NEOTEC SEMICONDUCTOR LTD. NT7108 AC CHARACTERISTICS (VDD=+5V±10%, Vss=0V, Ta=-30℃ ℃ to +85℃ ℃) Clock Timing Characteristic Symbol Min Type Max CLK1, CLK2 cycle time tCY 2.5 - 20 CLK1 "low" level width CLK2 "low" level width CLK1 "high" level width CLK2 "high" level width CLK1-CLK2 phase difference CLK2-CLK1 phase difference CLK1, CLK2 rise time CLK1, CLK2 fall time tWL1 tWL2 tWH1 tWH2 tD12 tD21 tR tF 625 625 1875 1875 625 625 - - 150 150 Unit μs ns tCY tF CLK1 tWH1 tR 0.7VDD 0.3VDD tD12 tD21 tWL1 CLK2 0.7VDD 0.3VDD tF tWH2 tWL2 tR tCY Figure 1. External Clock Waveform 12/18/2002 15/22 NEOTEC SEMICONDUCTOR LTD. Display Control Timing Characteristic FRM delay time M delay time CL "low" level width CL "high" level width NT7108 Symbol tDF tDM tWL tWH Min -2 -2 35 35 Type - Max 2 2 - Unit μs tWL CL 0.7VDD 0.3VDD tWH tDF FRM 0.7VDD 0.3VDD tDF tDM M Figure 2. Display Control Waveform 12/18/2002 16/22 NEOTEC SEMICONDUCTOR LTD. MPU Interface Characteristic E cycle E high level width E low level width E rise time E fall time Address set-up time Address hold time Data set-up time Data delay time Data hold time (write) Data hold time (read) NT7108 Symbol tC tWH tWL tR tF tASU tAH tDSU tD tDHW tDHR Min 1000 450 450 140 10 200 10 20 Type - Max 25 25 320 - Unit ns tC 0.7V E 0.3VDD DD tWL 0.7VDD 0.3VDD R/W CS1B, CS2B, CS3, RS tWH tR tASU tF tAH tASU 0.7VDD 0.3VDD tDSU tDHW 0.7VDD 0.3VDD DB0-DB7 Figure 3. MPU Write Timing tC 0.7V E 0.3VDD DD 0.7VDD 0.3VDD R/W CS1B, CS2B, CS3, RS DB0-DB7 tWL 0.7VDD 0.3VDD tWH tR tF tASU tAH tASU tAH tD tDHR 0.7VDD 0.3VDD Figure 4. MPU Read Timing 12/18/2002 17/22 NEOTEC SEMICONDUCTOR LTD. NT7108 TIMING DIAGRAM (1/64 DUTY) CLK1 CLK2 1 2 INPUT 64 3 1 48 2 3 49 64 1 2 3 64 1 CL FRM 1 Frame 1 Frame M V0 V1 COMMON C1 V4 V4 V5 V1 V1 C2 V4 V4 V5 V0 V5 V0 V1 V4 V0 V1 C64 V4 V5 V1 V4 SEGMENT V0 V2 S1 V3 V3 V2 V5 V0 S64 V3 V2 V3 V2 V5 12/18/2002 18/22 NEOTEC SEMICONDUCTOR LTD. NT7108 APPLICATION CIRCUIT 15 VEE V0R/L V2R/L V3R/L V5R/L S1~S64 CS3 NT7108 CS2B CS1B DB0~DB7 RSTB E R/W RS VSS VDD FRM M CLK1 CLK2 CL S1~S64 FRM M CLK1 CLK2 CL VSS 5 VDD 15 CS3 CS2B NT7108 CS1B DB0~DB7 RSTB E R/W RS SEG128 V0R/L V2R/L V3R/L V5R/L VEE 1/128 duty COMMON driver (NT7107) interface circuit VDD V0R/L V1R/L V4R/L V5R/L VEE VSS MS V0R/L V1R/L V4R/L V5R/L VEE VSS 15 RS R/W E RSTB DB0~DB7 CS1B CS2B CS3 MPU OPEN OPEN OPEN VEE C1~C64 DIO2 DIO1 CLK2 CL2 M NT7107 CLK1 (Slave) FRM 2 CR R 5 V4 V5 OPEN OPEN C1~C64 DIO1 CR NT7107 DIO2 R DS1 (Master) CL2 DS2 M PCLK2 CLK1 MS CLK2 FS FRM SHL VDD 15 VEE V0R/L V2R/L V3R/L V5R/L S1~S64 COM128 FRM M CLK1 CLK2 CL VDD COM1 CS3 NT7108 CS2B CS1B DB0~DB7 RSTB E R/W RS VSS PCLK2 FS DS1 DS2 SHL SEG1 S1~S64 FRM M CLK1 CLK2 CL VSS CS3 CS2B NT7108 CS1B DB0~DB7 RSTB E R/W RS VDD 15 V0R/L V2R/L V3R/L V5R/L VEE LCD Panel OPEN VDD V0 V1 V2 V3 VDD 12/18/2002 19/22 NEOTEC SEMICONDUCTOR LTD. NT7108 PAD DIAGRAM Note: Please connects the substrate to VDD or floating 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 52 29 53 28 54 27 55 26 56 25 57 24 58 23 59 22 60 21 61 20 62 19 63 18 64 17 X,Y(0,0) 65 16 66 15 67 69 70 13 12 11 71 10 72 9 73 8 74 7 75 6 76 5 77 4 78 12/18/2002 14 Chip size: 3050 X 4220 Pad size: 95x95 Unit: um 68 79 8 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 1 2 3 20/22 NEOTEC SEMICONDUCTOR LTD. PAD DIAGRAM Pad No. Pad name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 12/18/2002 ADC M VDD V3R V2R V5R V0R VEE SEG64 SEG63 SEG62 SEG61 SEG60 SEG59 SEG58 SEG57 SEG56 SEG55 SEG54 SEG53 SEG52 SEG51 SEG50 SEG49 SEG48 SEG47 SEG46 SEG45 SEG44 SEG43 SEG42 SEG41 SEG40 SEG39 SEG38 SEG37 SEG36 SEG35 SEG34 SEG33 SEG32 SEG31 SEG30 SEG29 SEG28 SEG27 SEG26 SEG25 SEG24 NT7108 X Y Pad No. Pad name X Y 1125.000 1250.000 1375.000 1408.100 -1994.198 -1994.198 -1994.198 -1725.300 -1600.300 -1475.300 -1350.300 -1225.300 -1100.300 -975.300 -850.300 -725.300 -600.300 -475.300 -350.300 -225.300 -100.300 24.700 149.700 274.700 399.700 524.700 649.700 774.700 899.700 1024.700 1124.700 1274.700 1399.700 1994.200 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 SEG23 SEG22 SEG21 SEG20 SEG19 SEG18 SEG17 SEG16 SEG15 SEG14 SEG13 SEG12 SEG11 SEG10 SEG9 SEG8 SEG7 SEG6 SEG5 SEG4 SEG3 SEG2 SEG1 VEE V0L V5L V2L V3L GND DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7 CS3 CS2B CS1B RSTB R/W RS CL CLK2 CLK1 E FRM -1187.500 -1312.500 -1408.098 1994.200 1994.200 1399.700 1274.700 1149.700 1024.700 899.700 774.700 649.700 524.700 399.700 274.700 149.700 27.700 -100.300 -225.300 -350.300 -475.300 -600.300 -725.300 -850.300 -975.300 -1100.300 -1225.300 -1350.300 -1475.300 -1600.300 -1725.300 -1994.198 1312.500 1187.500 1062.500 937.500 812.500 687.500 562.500 437.500 312.500 187.500 62.500 -62.500 -187.500 -312.500 -437.500 -562.500 -687.500 -812.500 -937.500 -1062.500 -1375.000 -1250.000 -1125.000 -1000.000 -875.000 -750.000 -625.000 -500.000 -375.000 -250.000 -125.000 0.000 125.000 250.000 375.000 500.000 625.000 750.000 875.000 1000.000 21/22 NEOTEC SEMICONDUCTOR LTD. NT7108 VERSION HISTORY Date 6/5/2002 12/11/2002 12/18/2002 12/18/2002 Description Add the notice of substrate connection. To correct some mistakes at page 5,6,15,19 To correct some mistakes at page 3,4,7,8,12,16 22/22