SQS405ENW www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -12 RDS(on) (Ω) at VGS = -4.5 V 0.020 RDS(on) (Ω) at VGS = -2.5 V 0.026 ID (A) • AEC-Q101 qualified d • 100 % Rg and UIS tested • Wettable flank terminals -16 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single PowerPAK® 1212-8 Single D D 8 D 7 D 6 5 S G 3. 3 1 2 S 3 S 4 S G Bottom View m m 1 3.3 mm Top View D P-Channel MOSFET Marking Code: Q022 ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and Halogen-free SQS405ENW-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 TC = 25 °C Continuous Drain Current a Continuous Source Current (Diode ID TC = 125 °C Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range -16 IS -16 -64 IAS -19 EAS 18 TJ, Tstg Soldering Recommendations (Peak Temperature) e, f V -16 IDM PD TC = 125 °C UNIT 39 13 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) SYMBOL PCB Mount c LIMIT RthJA 81 RthJC 3.8 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-0545-Rev. A, 18-Mar-15 Document Number: 62984 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductanceb VDS VGS = 0, ID = -250 μA -12 - - VGS(th) VDS = VGS, ID = -250 μA -0.45 -0.6 -1 VDS = 0 V, VGS = ± 8 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = -12 V - - -1 VGS = 0 V VDS = -12 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -12 V, TJ = 175 °C - - -150 VGS = -4.5 V VDS ≤ -5 V -20 - - VGS = -4.5 V ID = -13.5 A - 0.014 0.020 VGS = -4.5 V ID = -13.5 A - - 0.024 VGS = -4.5 V ID = -13.5 A - - 0.026 VGS = -2.5 V ID = -12 A - 0.017 0.026 - 34 - VDS = -6 V, ID = -13.5 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = -6 V, f = 1 MHz VGS = -8 V VDS = -6 V, ID = -10 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = -6 V, RL = 0.6 Ω ID ≅ -1.5 A, VGEN = -4.5 V, Rg = 1 Ω tf - 2210 2650 - 840 1010 - 660 800 - 49.8 75 - 3.8 5.9 15 - 8.2 1.1 2.4 4 - 27 34.5 pF nC Ω - 29 35 - 59 72 - 26 32 - - -64 A - -0.8 -1.1 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -10 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0545-Rev. A, 18-Mar-15 Document Number: 62984 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 5 V thru 2 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 1.5 V 12 6 0 18 TC = 25 °C 12 TC = 125 °C 6 0 2 4 6 8 0 0.0 10 0.6 TC = - 55 °C 1.2 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 50 0.08 TC = - 55 °C TC = 25 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 40 TC = 125 °C 30 20 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 10 VGS = 4.5 V 0 0.00 0 6 12 18 ID - Drain Current (A) 24 30 0 Transconductance 12 18 ID - Drain Current (A) 24 30 On-Resistance vs. Drain Current 4000 8 VDS = 6 V ID = 10 A VGS - Gate-to-Source Voltage (V) 3500 3000 C - Capacitance (pF) 6 2500 Ciss 2000 1500 Coss 1000 Crss 6 4 2 500 0 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) Capacitance S15-0545-Rev. A, 18-Mar-15 12 0 10 20 30 40 Qg - Total Gate Charge (nC) 50 Gate Charge Document Number: 62984 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 13 A 1.2 10 1.1 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.3 VGS = 4.5 V 1.0 0.9 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.8 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 0.001 0.0 On-Resistance vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Source Drain Diode Forward Voltage 0.10 0.4 ID = 250 μA 0.3 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.08 0.06 0.04 TJ = 150 °C 0.02 0.2 ID = 5 mA 0.1 0.0 - 0.1 TJ = 25 °C 0.00 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 - 0.2 - 50 - 25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage - 13.0 Brreakdown Voltage - 13.5 ID = 1 mA - 14.0 - 14.5 - 15.0 - 15.5 - 16.0 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-0545-Rev. A, 18-Mar-15 Document Number: 62984 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) ID Limited 100 IDM Limited ID - Drain Current (A) Limited by RDS(on)* 1 ms 10 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA (t) Single Pulse 0.01 10-4 10-3 10-2 4. Surface Mounted 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-0545-Rev. A, 18-Mar-15 Document Number: 62984 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62984. S15-0545-Rev. A, 18-Mar-15 Document Number: 62984 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8 and PowerPAK 1212-8W Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 1212-8 and PowerPAK 1212-8W packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQ7414AEN SQ7414AEN-T1-GE3 SQ7414AEN-T1_GE3 SQ7414AENW - SQ7414AENW-T1_GE3 SQ7415AEN SQ7415AEN-T1-GE3 SQ7415AEN-T1_GE3 SQ7415AENW - SQ7415AENW-T1_GE3 SQS401EN SQS401EN-T1-GE3 SQS401EN-T1_GE3 SQS401ENW - SQS401ENW-T1_GE3 SQS405EN SQS405EN-T1-GE3 SQS405EN-T1_GE3 SQS405ENW - SQS405ENW-T1_GE3 SQS420EN SQS420EN-T1-GE3 SQS420EN-T1_GE3 SQS423EN SQS423EN-T1-GE3 SQS423EN-T1_GE3 SQS460EN SQS460EN-T1-GE3 SQS460EN-T1_GE3 SQS462EN SQS462EN-T1-GE3 SQS462EN-T1_GE3 SQS482EN SQS482EN-T1-GE3 SQS482EN-T1_GE3 SQS484EN SQS484EN-T1-GE3 SQS484EN-T1_GE3 SQS490EN SQS490EN-T1-GE3 SQS490EN-T1_GE3 SQS840EN SQS840EN-T1-GE3 SQS840EN-T1_GE3 SQS850EN SQS850EN-T1-GE3 SQS850EN-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 25-Aug-15 Document Number: 66697 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8W Case Outline E2 E4 H L K 1 Z 2 4 5 3 4 b 6 θ 3 D5 2 D2 2 7 D1 D 8 e 1 M θ D4 A2 W L1 θ E3 Backside view of single pad θ c A A1 2 E1 E DIM. Detail Z Notes 1 Inch will govern 2 Dimensions exclusive of mold gate burrs 3 Dimensions exclusive of mold flash and cutting burrs MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0 - 0.05 0 - 0.002 A2 0 - 0.13 0 - 0.005 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D4 0.47 typ. D5 2.3 typ. 0.0185 typ. 0.090 typ. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.34 typ. 0.013 typ. e 0.65 BSC. 0.026 BSC K 0.86 typ. 0.034 typ. H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: C15-1530-Rev. B, 16-Nov-15 DWG: 6032 Revision: 16-Nov-15 Document Number: 64614 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000