SQS405ENW Datasheet

SQS405ENW
www.vishay.com
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
-12
RDS(on) (Ω) at VGS = -4.5 V
0.020
RDS(on) (Ω) at VGS = -2.5 V
0.026
ID (A)
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Wettable flank terminals
-16
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Single
PowerPAK® 1212-8 Single
D
D 8
D 7
D 6
5
S
G
3.
3
1
2 S
3 S
4 S
G
Bottom View
m
m
1
3.3
mm
Top View
D
P-Channel MOSFET
Marking Code: Q022
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and Halogen-free
SQS405ENW-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-12
Gate-Source Voltage
VGS
±8
TC = 25 °C
Continuous Drain Current a
Continuous Source Current (Diode
ID
TC = 125 °C
Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
-16
IS
-16
-64
IAS
-19
EAS
18
TJ, Tstg
Soldering Recommendations (Peak Temperature) e, f
V
-16
IDM
PD
TC = 125 °C
UNIT
39
13
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
SYMBOL
PCB Mount
c
LIMIT
RthJA
81
RthJC
3.8
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductanceb
VDS
VGS = 0, ID = -250 μA
-12
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-0.45
-0.6
-1
VDS = 0 V, VGS = ± 8 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -12 V
-
-
-1
VGS = 0 V
VDS = -12 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -12 V, TJ = 175 °C
-
-
-150
VGS = -4.5 V
VDS ≤ -5 V
-20
-
-
VGS = -4.5 V
ID = -13.5 A
-
0.014
0.020
VGS = -4.5 V
ID = -13.5 A
-
-
0.024
VGS = -4.5 V
ID = -13.5 A
-
-
0.026
VGS = -2.5 V
ID = -12 A
-
0.017
0.026
-
34
-
VDS = -6 V, ID = -13.5 A
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain
Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
VGS = 0 V
VDS = -6 V, f = 1 MHz
VGS = -8 V
VDS = -6 V, ID = -10 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = -6 V, RL = 0.6 Ω
ID ≅ -1.5 A, VGEN = -4.5 V, Rg = 1 Ω
tf
-
2210
2650
-
840
1010
-
660
800
-
49.8
75
-
3.8
5.9
15
-
8.2
1.1
2.4
4
-
27
34.5
pF
nC
Ω
-
29
35
-
59
72
-
26
32
-
-
-64
A
-
-0.8
-1.1
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = -10 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
VGS = 5 V thru 2 V
24
ID - Drain Current (A)
ID - Drain Current (A)
24
18
1.5 V
12
6
0
18
TC = 25 °C
12
TC = 125 °C
6
0
2
4
6
8
0
0.0
10
0.6
TC = - 55 °C
1.2
1.8
2.4
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
50
0.08
TC = - 55 °C
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
40
TC = 125 °C
30
20
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
0.02
10
VGS = 4.5 V
0
0.00
0
6
12
18
ID - Drain Current (A)
24
30
0
Transconductance
12
18
ID - Drain Current (A)
24
30
On-Resistance vs. Drain Current
4000
8
VDS = 6 V
ID = 10 A
VGS - Gate-to-Source Voltage (V)
3500
3000
C - Capacitance (pF)
6
2500
Ciss
2000
1500
Coss
1000
Crss
6
4
2
500
0
0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-0545-Rev. A, 18-Mar-15
12
0
10
20
30
40
Qg - Total Gate Charge (nC)
50
Gate Charge
Document Number: 62984
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 13 A
1.2
10
1.1
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
1.3
VGS = 4.5 V
1.0
0.9
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.8
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
0.001
0.0
On-Resistance vs. Junction Temperature
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.10
0.4
ID = 250 μA
0.3
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
0.08
0.06
0.04
TJ = 150 °C
0.02
0.2
ID = 5 mA
0.1
0.0
- 0.1
TJ = 25 °C
0.00
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
- 0.2
- 50 - 25
0
On-Resistance vs. Gate-to-Source Voltage
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage
- 13.0
Brreakdown Voltage
- 13.5
ID = 1 mA
- 14.0
- 14.5
- 15.0
- 15.5
- 16.0
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
ID Limited
100
IDM Limited
ID - Drain Current (A)
Limited by RDS(on)*
1 ms
10
10 ms
100 ms, 1 s,
10 s, DC
1
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA (t)
Single Pulse
0.01
10-4
10-3
10-2
4. Surface Mounted
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS405ENW
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62984.
S15-0545-Rev. A, 18-Mar-15
Document Number: 62984
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8 and PowerPAK 1212-8W
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 1212-8 and PowerPAK 1212-8W packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQ7414AEN
SQ7414AEN-T1-GE3
SQ7414AEN-T1_GE3
SQ7414AENW
-
SQ7414AENW-T1_GE3
SQ7415AEN
SQ7415AEN-T1-GE3
SQ7415AEN-T1_GE3
SQ7415AENW
-
SQ7415AENW-T1_GE3
SQS401EN
SQS401EN-T1-GE3
SQS401EN-T1_GE3
SQS401ENW
-
SQS401ENW-T1_GE3
SQS405EN
SQS405EN-T1-GE3
SQS405EN-T1_GE3
SQS405ENW
-
SQS405ENW-T1_GE3
SQS420EN
SQS420EN-T1-GE3
SQS420EN-T1_GE3
SQS423EN
SQS423EN-T1-GE3
SQS423EN-T1_GE3
SQS460EN
SQS460EN-T1-GE3
SQS460EN-T1_GE3
SQS462EN
SQS462EN-T1-GE3
SQS462EN-T1_GE3
SQS482EN
SQS482EN-T1-GE3
SQS482EN-T1_GE3
SQS484EN
SQS484EN-T1-GE3
SQS484EN-T1_GE3
SQS490EN
SQS490EN-T1-GE3
SQS490EN-T1_GE3
SQS840EN
SQS840EN-T1-GE3
SQS840EN-T1_GE3
SQS850EN
SQS850EN-T1-GE3
SQS850EN-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 25-Aug-15
Document Number: 66697
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8W Case Outline
E2
E4
H
L
K
1
Z
2
4
5
3
4
b
6
θ
3
D5
2
D2
2
7
D1
D
8
e
1
M
θ
D4
A2
W
L1
θ
E3
Backside view of single pad
θ
c
A
A1
2
E1
E
DIM.
Detail Z
Notes
1 Inch will govern
2 Dimensions exclusive of mold gate burrs
3 Dimensions exclusive of mold flash and
cutting burrs
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0
-
0.05
0
-
0.002
A2
0
-
0.13
0
-
0.005
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ.
0.090 typ.
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.34 typ.
0.013 typ.
e
0.65 BSC.
0.026 BSC
K
0.86 typ.
0.034 typ.
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008

0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: C15-1530-Rev. B, 16-Nov-15
DWG: 6032
Revision: 16-Nov-15
Document Number: 64614
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000